Jonathan W Anderson

  • Postdoctoral Scholar at Physics, College of Science & Engineering

Scholarly and Creative Works

2025

  • Nugera, F. A., Anderson, J. W., Devkota, D., Aryal, G., Anderson, J. H., Engdahl, C., … Holtz, M. W. (2025). Lateral growth of diamond based on precise seeding patterns using electron-beam lithography. Functional Diamond, 5(1), 2533893. https://doi.org/10.1080/26941112.2025.2533893

2023

  • Dey, T., Arbogast, A. W., Meng, Q., Reza, M. S., Muhowski, A. J., Cooper, J., … Wistey, M. A. (2023). Influence of H on Sn Incorporation in GeSnC Alloys Grown Using Molecular Beam Epitaxy. Journal of Applied Physics, 134(19), 193102. https://doi.org/https://doi.org/10.1063/5.0173429
  • Saha, R., Anderson, J. W., Holtz, M. W., & Piner, E. L. (2023). Atomic layer deposition of Al2O3 interlayer for improving AlN growth on silicon substrates. Journal of Vacuum Science & Technology A, 41(5), 053208. https://doi.org/10.1116/6.0002760
  • K.C., A., Anderson, J. W., Ayala, A. G., Engdahl, C., Piner, E. L., & Holtz, M. W. (2023). Heterogeneous integration of high-quality diamond on aluminum nitride with low and high seeding density. Journal of Crystal Growth, 610, 127172. https://doi.org/https://doi.org/10.1016/j.jcrysgro.2023.127172

2022

  • Anupam, K. C., Siddique, A., Anderson, J. W., Saha, R., Gautam, C., Ayala, A. G., … Piner, E. L. (2022). Preferentially oriented growth of diamond films on silicon with nickel interlayer. SN APPLIED SCIENCES, 4(8). https://doi.org/10.1007/s42452-022-05092-y
  • Mia, M. D., Samuels, B. C., Anderson, J., Haque, A., & Droopad, R. (2022). Growth and characterization of (Ga1− xFex) 2O3 thin films by pulsed laser deposition for wide-bandgap and spintronics applications. MRS Communications, 12, 422–426. https://doi.org/10.1557/s43579-022-00194-5

2021

  • Siddique, A., Ahmed, R., Anderson, J. W., Holtz, M. W., & Piner, E. L. (2021). Improved Electrical Properties of AlGaN/GaN High-Electron-Mobility Transistors by In Situ Tailoring the SiNx Passivation Layer. ACS Applied Materials \& Interfaces, 13, 18264–18273. https://doi.org/10.1021/acsami.1c01241
  • K. C.,Anupam, Saha, R., Anderson, J. W., Ayala, A. G., Engdahl,Christopher, Piner, E. L., & Holtz, M. W. (2021). Effect of seeding density on the growth of diamond films by hot-filament chemical vapor deposition from sparse to dense range. Journal of Applied Physics, 130(22), 225302. https://doi.org/10.1063/5.0068541

2020

  • Ahmed, R., Siddique, A., Anderson, J. W., Gautam, C., Holtz, M. W., & Piner, E. L. (2020). Integration of GaN and Diamond Using Epitaxial Lateral Overgrowth. ACS Applied Materials \& Interfaces, 12(35), 39397–39404. https://doi.org/10.1021/acsami.0c10065
  • Ahmed, R., Siddique, A., Saha, R., Anderson, J. W., Engdahl, C., Holtz, M. W., & Piner, E. L. (2020). Effect of precursor stoichiometry on morphology, phase purity, and texture formation of hot filament CVD diamond films grown on Si (100) substrate. Journal of Materials Science: Materials in Electronics, 31, 8597–8606. https://doi.org/10.1007/s10854-020-03395-7

2019

  • Siddique, A., Ahmed, R., Anderson, J. W., Nazari, M., Yates, L., Graham, S., … Piner, E. L. (2019). Structure and Interface Analysis of Diamond on an AlGaN/GaN HEMT Utilizing an in Situ SiNx Interlayer Grown by MOCVD. ACS Applied Electronic Materials, 0(0), null. https://doi.org/10.1021/acsaelm.9b00131