Faculty Profile for Jonathan W Anderson

Selected Scholarly/Creative Work

• Siddique, A., Ahmed, R., Anderson, J. W., Holtz, M. W., & Piner, E. L. (2021). Improved Electrical Properties of AlGaN/GaN High-Electron-Mobility Transistors by In Situ Tailoring the SiNx Passivation Layer. ACS Applied Materials \& Interfaces, 13, 18264–18273. https://doi.org/10.1021/acsami.1c01241
• Ahmed, R., Siddique, A., Anderson, J. W., Gautam, C., Holtz, M. W., & Piner, E. L. (2020). Integration of GaN and Diamond Using Epitaxial Lateral Overgrowth. ACS Applied Materials \& Interfaces, 12(35), 39397–39404. https://doi.org/10.1021/acsami.0c10065
• Ahmed, R., Siddique, A., Saha, R., Anderson, J. W., Engdahl, C., Holtz, M. W., & Piner, E. L. (2020). Effect of precursor stoichiometry on morphology, phase purity, and texture formation of hot filament CVD diamond films grown on Si (100) substrate. Journal of Materials Science: Materials in Electronics, 31, 8597–8606. https://doi.org/10.1007/s10854-020-03395-7
• Nugera, F. A., Anderson, J. W., Devkota, D., Aryal, G., Anderson, J. H., Engdahl, C., … Holtz, M. W. (2025). Lateral growth of diamond based on precise seeding patterns using electron-beam lithography. Functional Diamond, 5(1), 2533893. https://doi.org/10.1080/26941112.2025.2533893
• Dey, T., Arbogast, A. W., Meng, Q., Reza, M. S., Muhowski, A. J., Cooper, J., … Wistey, M. A. (2023). Influence of H on Sn Incorporation in GeSnC Alloys Grown Using Molecular Beam Epitaxy. Journal of Applied Physics, 134(19), 193102. https://doi.org/https://doi.org/10.1063/5.0173429