-
Siddique, A., Ahmed, R., Anderson, J. W., Holtz, M. W., & Piner, E. L. (2021). Improved Electrical Properties of AlGaN/GaN High-Electron-Mobility Transistors by In Situ Tailoring the SiNx Passivation Layer. ACS Applied Materials \& Interfaces, 13, 18264–18273. https://doi.org/10.1021/acsami.1c01241
-
Ahmed, R., Siddique, A., Anderson, J. W., Gautam, C., Holtz, M. W., & Piner, E. L. (2020). Integration of GaN and Diamond Using Epitaxial Lateral Overgrowth. ACS Applied Materials \& Interfaces, 12(35), 39397–39404. https://doi.org/10.1021/acsami.0c10065
-
Ahmed, R., Siddique, A., Saha, R., Anderson, J. W., Engdahl, C., Holtz, M. W., & Piner, E. L. (2020). Effect of precursor stoichiometry on morphology, phase purity, and texture formation of hot filament CVD diamond films grown on Si (100) substrate. Journal of Materials Science: Materials in Electronics, 31, 8597–8606. https://doi.org/10.1007/s10854-020-03395-7
-
Aguirre Sanchez, A. S., Aggarwal, R., Rodriguez-Davila, R. A., Young, C. D., Anderson, J. W., Piner, E. L., & Quevedo, M. A. (2025). Electrical Interface Characterization of Sacrificial SiNx-Protected RTA in d-Mode GaN MIS-HEMTs with ALD Al2O3.
-
Nugera, F. A., Anderson, J. W., Devkota, D., Aryal, G., Anderson, J. H., Engdahl, C., … Holtz, M. W. (2025). Lateral growth of diamond based on precise seeding patterns using electron-beam lithography. Functional Diamond, 5(1), 2533893. https://doi.org/10.1080/26941112.2025.2533893
