Faculty Profiles

Welch, E., Talukder, M. A. A., Martins, N. R., Borges, P. D., Droopad, R., & Scolfaro, L. M. (2024). Indium defect complexes in (Inx Ga1−x) 2 O3 : A combined experimental and hybrid density functional theory study. Journal of Physics D: Applied Physics, 57, 145302. https://doi.org/https://doi.org/10.1088/1361-6463/ad1b9b

Martins, N. R., Viana, L. A. F. C., Santos, A. A. G., Borges, D. D., Welch, E., Borges, P. D., & Scolfaro, L. M. (2024). Computational study and ion diffusion analyses of native defects and indium alloying in β − Ga2O3 structures. Journal of Vacuum Science and Technology A, 42, 032801. https://doi.org/https://doi.org/10.1116/6.0003435

Viana, L. A., Santos, A. A., Borges, P. D., Scolfaro, L. M., Costa, D. G., Taqy, S. A. A., … Haque, A. (2024). Structural, optoelectronic, and magnetic properties of Q‑carbon studied by hybrid density functional theory ab initio calculations and experiment. Diamond and Related Materials, 149, 111638. https://doi.org/https://doi.org/10.1016/j.diamond.2024.111638

Cantrell, S. R., Welch, E., Scolfaro, L., & Geerts, W. J. (2023). Opto-electronic properties of carbon doped NiO. J. Phys. and Chem. Solids, 174, 111110. https://doi.org/j.jpcs.2022.111110

Welch, E., Borges, P. D., & Scolfaro, L. M. (2023). Hybrid density functional theory study of substitutional Gd in β -Ga2O3. Physica B, 651, 414558.

Welch, E., & Scolfaro, L. M. (2022). Hybrid density functional theory study on zinc blende GaN and diamond surfaces and interfaces: Effects of size, hydrogen passivation, and dipole corrections. Computational Condensed Matter, 30, e00653. https://doi.org/https://doi.org/10.1016/j.cocom.2022.e00653

Mia, D., Samuels, B., Borges, P., Scolfaro, L., Siddique, A., Saha, J., … Droopad, R. (2022). Growth and characterization of ( Ga1 − xGdx)2O3 by pulsed laser deposition for wide bandgap applications. Applied Physics A: Material Science and Processing, 128, 366. https://doi.org/10.1007/s00339-022-05476-2

Scolfaro, L. M., Mia, M. D., Talukder, M. A. A., Samuels, B. C., Borges, P., Geerts, W. J., & Droopad, R. (n.d.). Stability and Electronic Properties of Ga2O3 :Fe Alloys Studied Using Density Functional Theory Calculations.

Romeiro, F. C., Castro, N. S., Scolfaro, L. M., Borges, P. D., & Lima, R. C. (2021). Theoretical and experimental study of effects of Co2+ doping on structural and electronic properties of ZnO. Journal of Physics and Chemistry of Solids, 162. https://doi.org/https://doi.org/10.1016/j.jpcs.2021.110501

Droopad, R., Scolfaro, L. M., Geerts, W. J., Mia, M. D., Samuels, B. C., & Talukder, M. A. A. (2021). Theoretical and experimental study of  (Ga1-XFeX)2O3 ternary alloy. Journal of Crystal Growth, 575. https://doi.org/https://doi.org/10.1016/j.jcrysgro.2021.126353

Scolfaro, L. M., Shook, J., Geerts, W., & Borges, P. D. (2020). Evaluation of Ni doping for promoting favorable electronic structures in CuCrO2 and AgCrO2 from a first-principles perspective. Ceramics International, 46, 26777.

Nascimento, K. S., Leite Alves, H. W., & Scolfaro, L. M. (2020). Theoretical study of Sn and Te adsorption over Graphene from ab initio calculations. AIP Advances, 10, 105313. https://doi.org/10.1063/5.0022248

Ferreira, C. R., Pulcinelli, S. H., Scolfaro, L. M., & Borges, P. D. (2020). Structural and Electronic Properties of Iron-Doped Sodium Montmorillonite Clays: A First-Principles DFT Study. ACS Omega, 4, 14369. https://doi.org/10.1021/acsomega.9b00685

Welch, E. W., Jung, Y.-K., Walsh, A., Scolfaro, L. M., & Zakhidov, A. (2020). A density functional theory study on the interface stability between CsPbBr3 and CuI. AIP Advances, 10(085023). https://doi.org/10.1063/5.0018925

Shook, J., Scolfaro, L. M., Borges, P. D., & Geerts, W. J. (2019). Structural stability and electronic properties of XTO2 (X= Cu, Ag; T=Al, Cr): An ab initio study including X vacancies and Mg doping. Solid State Sciences, 88, 48.

Petersen, J. E., Scolfaro, L. M., Borges, P. D., & Geerts, W. J. (2019). Symmetry considerations on band filling and first optical transition in NiO. European Physics Journal B, 92, 232.

Talbert, J. N., Cantrell, S. R., Talukder, Md. A. A., Scolfaro, L. M., & Geerts, W. J. (2019). Electrical Characterization of Silicon – Nickel Iron Oxide Heterojunctions. MRS Advances, 4, 2241.

D. C., B., Oliva, A., Ayala, A., Acharya, S., Twagirayezu, F., Talbert, J. N., … Geerts, W. J. (2019). Magnetic Properties of reactive co-sputtered NiFe-oxide samples. IEEE Trans. on Magn., 55, 2900205.

Ferreira, C. R., Pulcinelli, S. H., Scolfaro, L. M., & Borges, P. D. (2019). Structural and Electronic Properties of Iron-Doped Sodium Montmorillonite Clays: A First-Principles DFT Study. ACS Omega, 4, 14369.

Shook, J., Borges, P. D., Scolfaro, L. M., & Geerts, W. J. (2019). Effects of vacancies and p-doping on the optoelectronic properties of Cu- and Ag-based transparent conducting oxides. Journal of Applied Physics, 126, 075702. https://doi.org/https://doi.org/10.1063/1.5088711

Talbert, J. N., Cantrell, S., Talukder, M. A. A., Scolfaro, L., & Geerts, W. J. (2019). Electrical Characterization of Silicon – Nickel Iron Oxide Heterojunctions. In MRS Advances (Vol. 4, pp. 2241–2248). MRS. https://doi.org/DOI: 10.1557/adv.2019.321

Petersen, J. E., Bechstedt, F., Furthmuller, J., & Scolfaro, L. M. (2018). Spontaneous Symmetry Breaking, Pseudogap, and Dielectric Constant in Commensurate LSCO and LSNO. Physical Review B, 97, 195129. https://doi.org/https://doi.org/10.1103/PhysRevB.97.195129

Shook, J., Borges, P. D., & Scolfaro, L. M. (2018). A First Principles Study on the Electronic, Optical and Hole Effective Mass Properties of Mg-Doped CuAlO2 and AgAlO2. MRS Advances, 1–7. https://doi.org/10.1557/adv.2018.550

Binod, D. C., Oliva, A. A., Ayala, A., Acharya, S., Twagirayezu, F., Talbert, J. N., … Geerts, W. J. (2018). Magnetic Properties of Reactive Co-Sputtered NiFe-Oxide Samples. IEEE Transactions on Magnetics, 55(2). https://doi.org/10.1109/TMAG.2018.2866788

Ladislau, S. M., Leite Alves, H. W., Borges, P. D., Petersen, J. E., & Scolfaro, L. M. (2017). Ab initio Results for the Structural and Electronic Properties of Intrinsic Defects in PbTe. In DOI: 10.17648/bwsp-2017-70074.

Petersen, J. E., Twagirayezu Fidele, Scolfaro, L. M., Borges Pablo, & Geerts, W. J. (2017). Electronics and Optical properties of antiferromagnetic Iron doped NiO – A first principles study. In AIP Advances (Vol. 7, p. 055711). AIP. https://doi.org/doi:http://dx.doi.org/10.1063/1.4975493

Borges, P. D., Cott, J., Pinto, F. G., Scolfaro, L., & Tronto, J. (2016). Native defects as sources of optical transitions in MgAl2O4 spinel, 3.

Petersen, J. E., Twagirayezu, F., Borges, P. D., Scolfaro, L. M., & Geerts, W. (2016). Ab initio study of oxygen vacancy effects on electronic and optical properties of NiO. MRS Advances, 1, 2617.

Borges, P. D., Petersen, J. E., Scolfaro, L. M., Leite Alves, H. W., & Myers, T. H. (2015). Improved thermoelectric properties of IV-VI-based semiconductor superlattices. Journal of Solid State Chemistry.

Borges, P. D., Scolfaro, L., & Assali, L. V. C. (2015). Complex centers of hydrogen in Tin Dioxide. Theoretical Chemistry Accounts, 134(131).

Borges, P. D., Silva, D. E. S., Castro, N. S., Ferreira, C. R., Pinto, F. G., Tronto, J., & Scolfaro, L. (2015). Ab initio study of thermoelectric properties of doped SnO2 superlattices, 231, 123.

Borges, p D., Peterson, J. E., Scolfaro, L., Leite Alves, H. W., & Myers, T. H. (2015). Thermoelectric properties of IV-VI based heterostructures and superlattices. Journal of Solid State Chemistry, 227, 123.

Petersen, J. E., Scolfaro, L. M. R., & Myers, T. H. (2014). Elastic and mechanical properties of intrinsic and doped PbSe and PbTe  studied by first-principles. Materials Chemistry and Physics, 146, 472–477.

Borges, P. D., & Scolfaro, L. (2014). Electronic and thermoelectric properties of InN studied using ab initio density functional theory and Boltzmann transport calculations. Journal of Applied Physics, 116, 223706.

Scolfaro, L. M., Leite Alves, H. W., Borges, P. D., Garcia, J. C., & da Silva Jr, E. F. (2014). Structural, electronic, vibrational and dielectric properties of selected high-k semiconductor oxides. Journal of Physics D: Applied Physics (Topical Review), 47, 413001.

Scolfaro, L. M. (2014). DELTA-DOPING LAYERS IN LEAD TELLURIDE FOR IMPROVED THERMOELECTRIC PROPERTIES. XXIII International Materials Research Congress.

Leite Alves, H. W., Scolfaro, L., & da Silva Jr, E. F. (2014). Ab initio calculations of the electronic and dielectric properties of SnO2/TiO2 (001) superlattices. 2014 International Conference on Semiconductor Nanostructures and Nanodevices.

Borges, P. D., Castro, N. S., Silva, D. E. S., Pinto, F. G., Tronto, J., & Scolfaro, L. M. (2014). First Principles study of planar Sb- and Zn-codopeded SnO2 superlattices. 2014 International Conference on the Physics of Semiconductors.

Petersen, J. E., Scolfaro, L. M., & Myers, T. H. (2014). On the mechanical properties of Lead Chalcogenides from ab initio calculations. 2014 International Conference on the Physics of Semiconductors.

Borges, P. D., Scolfaro, L. M. R., Leite Alves, H. W., da Silva Jr., E. F., & Assali, L. V. (2013). Theoretical study of the influence of vacancies in the magnetic stability of V-, Cr-, and Mn-doped SnO2. Applied Surface Science, 267, 115.

Leite Alves, H. W., Neto, A. R. R., Myers, T. H., Scolfaro, L. M. R., & Borges, P. D. (2013). Lattice contribution to the high dielectric constant of PbTe. Physical  Review B, 87, 115204.

Leite Alves, H. W., Scolfaro, L. M., & da Silva Jr., E. F. (2012). Lattice dynamics Ga1-xMnxN and Ga1-xMnxAs by first-principles calculations. Nanoscale Research Letters, 7, 753. https://doi.org/10.1186/1556-276X-7-573

Gomes, J. L., Rodrigues, S. C. P., Sipahi, G. M., Scolfaro, L. M. R., & da Silva Jr., E. F. (2012). Spin-polarized transport in II-VI diluted magnetic semiconductors superlattices. Materials Science and Engineering B, 177, 9621.

Borges, P. D., Scolfaro, L. M., Leite Alves, H. W., da Silva Jr., E. F., & Assali, L. V. (2012). Study of the oxygen vacancy influence on magnetic properties of Fe- and Co-doped SnO2 diluted alloys. Nanoscale Research Letters, 7, 540. https://doi.org/10.1186/1556-276X-7-540

de Oliveira, T. F., Rodrigues, S. C., Scolfaro, L. M., Sipahi, G. M., & da Silva Jr., E. F. (2012). Theoretical luminescence spectra in p-type based on InGaAsN. Nanoscale Research Letters, 7, 607. https://doi.org/10.1186/1556-276X-7-607

Borges, P. D., Scolfaro, L. M. R., Leite Alves, H. W., da Silva Jr., E. F., & Assali, L. V. C. (2011). Electronic and magnetic properties of SnO2/CrO2 thin superlattices. Nanoscale Research Letters, 6, 146.

Borges, P. D., Scolfaro, L. M. R., Leite Alves, H. W., da Silva Jr., E. F., & Assali, L. V. C. (2011). Magnetic and electronic properties of Sn1¡xCrxO2  diluted alloys. Materials Science & Engineering. B - Advanced Functional Solid-State Materials, 176, 1378.

dos Santos, O. F. P., Rodrigues, S. C. P., Sipahi, G. M., Scolfaro, L. M. R., & da Silva Jr., E. F. (2011). Study of the vertical transport in p-doped superlattices based on group III-V semiconductors. Nanoscale Research Letters, 6, 175.

Rodrigues, S. C., Sipahi, G. M., Scolfaro, L., & da Silva Jr., E. F. (2011). Chapter 14: Application of quaternary AlInGaN-based alloys for light emission devices. In Optoelectronics - Materials and Techniques (p. 355). Intech Publications- Open Access Publisher.

Borges, P. D., Scolfaro, L. M. R., Leite Alves, H. W., & da Silva Jr., E. F. (2010). DFT study of the electronic, vibrational, and optical properties of SnO2. Theoretical Chemistry Accounts, 126, 39.

Rodrigues, S. C. P., Sipahi, G. M., Scolfaro, L. M. R., & da Silva Jr., E. F. (2010). Spin-polarization effects in homogeneous and non-homogeneous diluted magnetic semiconductor heterostructures. Nanotechnology, 21, 375401.

Borges, P. D., Scolfaro, L. M. R., Leite Alves, H. W., & da Silva Jr, E. F. (2009). Electronic and dielectric properties calculations of pure, impurities and vacancies in tin dioxide.

Borges, P. D., Scolfaro, L. M., Leite Alves, H. W., & da Silva Jr., E. F. (2009). Electronic and dielectric properties calculations of pure, impurities and vacancies in tin dioxide (Vol. 978). AIP Conference Proceedings.

Leite Alves, H. W., Silva, C. C., Lino, A. T., Borges, P. D., Scolfaro, L. M. R., & da Silva Jr., E. F. (2008). Electronic, vibrational and related properties of group-IV metal oxides by ab initio calculations. Applied Surface Science, 255(752).

Rodrigues, S. C. P., dos Santos, O. F. P., Scolfaro, L. M. R., Sipahi, G. M., & da Silva Jr., E. F. (2008). Luminescence studies on nitride quaternary alloys double quantum wells. Applied Surface Science, 254(7790).

Flores, M. Z. S., Freire, V. N., dos Santos, R. P., Farias, G. A., Caetano, E. W. S., de Oliveira, M. C. F., … Alves, H. W. L. (2008). Optical absorption and electronic band structure first-principles calculations of alpha-glycine crystals. Physical Review B, 77, 115104.

Rodrigues, S. C. P., Araújo, Y. R. V., Sipahi, G. M., Scolfaro, L. M. R., & da Silva Jr., E. F. (2008). The effect of additional Si and SiGe layers on the confinement potential of GeMn diluted ferromagnetic semiconductor. Applied Surface Science, 255(709).

Rodrigues, S. C. P., dos Santos, O. F. P., Scolfaro, L. M. R., Sipahi, G. M., & da Silva Jr, E. F. (2008). Interband transitions in cubic nitride quaternary alloys double quantum wells.

Rodrigues, S. C., dos Santos, O. F., Scolfaro, L. M., Sipahi, G. M., & da Silva Jr., E. F. (2008). Interband transitions in cubic nitride quaternary alloys double quantum wells.

Rodrigues, S. C. P., Euryce, M. N. D., Sipahi, G. M., Scolfaro, L. M. R., & da Silva Jr, E. F. (2007). White light emission from p-doped quaternary (AllnGa)N-based superlattices: theoretical calculations for the cubic phase. Journal of Applied Physics, 101, 113706.

Marques, M., Teles, L. K., Ferreira, L. G., Scolfaro, L. M. R., Furthmüller, J., & Bechstedt, F. (2007). Energy gap and bond lengths of AlxGayIn1-x-yN, AlxGayIn1-x-yP and AxGayIn1-x-yAs quaternary alloys. In Physica Status Solidi ( C ), Conferences and Critical Reviews (Vol. 4, p. 229).

Ribeiro Jr., M. F. S., Scolfaro, L. M. R., Teles, L. K., Marques, M., & Ferreira, L. G. (2007). Magnetic and electronic properties of transition metal nitride strained layers. In Physica Status Solidi. ( C ), Conferences and Critical Reviews (Vol. 4, p. 269).

Marques, M., Ferreira, L. G., Teles, L. K., Scolfaro, L. M., Furthmüller, J., & Bechstedt, F. (2007). Ab initio study of GaN/Mnx Ga 1-x N digital heterostructure. In AIP Conference Proceedings (Vol. 893, p. 1249).

Silva, C. C., Leite Alves, H. W., & Scolfaro, L. M. (2007). Frequency dependency of the dielectric constants and of the reflectivity for HfO2. In AIP Conference Proceedings (Vol. 893, p. 311).

Lino, A. T., Borges, P. D., Scolfaro, L. M. R., Rodrigues, S. C. P., & da Silva Jr, E. F. (2007). Optical properties and carrier effective masses of rutile SnO2 as obtained from full-relativistic band structure calculations. In AIP Conference Proceedings (Vol. 893, p. 529).

Ribeiro Jr., M. F. S., Marques, M., Scolfaro, L. M. R., Teles, L. K., & Ferreira, L. G. (2007). Theoretical study of Magnetic Properties of VN, CrN, MnN, FeN, and CoN under strain. In AIP Conference Proceedings (Vol. 893, p. 1227).

Marques, M., Ferreira, L. G., Teles, L. K., Teles, L. M., Furthmüller, J., Bechstedt, F., & Scolfaro, L. M. (2007). Ab initio study of GaN/Mnx Ga 1-x N digital heterostructure (Vol. 893). AIP Conference Proceedings.

Silva, C. C., Leite Alves, H. W., & Scolfaro, L. M. (2007). Frequency dependency of the dielectric constants and of the reflectivity for HfO2 (Vol. 893). AIP Conference Proceedings.

Lino, A. T., Borges, P. D., Scolfaro, L. M., Rodrigues, S. C., & da Silva Jr., E. F. (2007). Optical properties and carrier effective masses of rutile SnO2 as obtained from full-relativistic band structure calculations (Vol. 893). AIP Conference Proceedings.

Ribeiro Jr., M. F., Marques, M., Scolfaro, L. M., Teles, L. K., & Ferreira, L. G. (2007). Theoretical study of Magnetic Properties of VN, CrN, MnN, FeN, and CoN under strain (Vol. 893). AIP Conference Proceedings.

Marques, M., Teles, L. K., Scolfaro, L. M. R., Furthmüller, F., Bechstedt, F., & Ferreira, L. G. (2006). Theoretical prediction of ferromagnetic MnN layers embedded in wurtzite GaN. Applied Physics Letters, 88, 22507.

Marques, M., Ferreira, L. G., Teles, L. K., Scolfaro, L. M. R., Furthmüller, J., & Bechstedt, F. (2006). Magnetic properties of GaN/MnxGaN1-xN digital heterostructures: First principles and Monte Carlo calculations. Physical Review B, 73, 224409.

Marques, M., Teles, L. K., Ferreira, L. G., Scolfaro, L. M. R., Furthmüller, F., & Bechstedt, F. (2006). Statistical model applied to A$_x$B$_y$C$_{1-x-y}$D quaternary alloys: bond lengths and energy gaps of Al$_x$Ga$_y$In$_{1-x-y}$X (X=As, P or N) systems. Physical Review B, 73, 235205.

Pereira, T. A. S., Freire, J. A. K., Farias, G. A., Scolfaro, L. M. R., Leite, J. R., & da Silva Jr., E. F. (2006). Large image potential effects in Si/SrTiO3 and Si/HfO2 two-dimensional quantum well structures. Applied Physics Letters, 88, 242114.

Garcia, J. C., Scolfaro, L. M. R., Lino, A. T., Freire, V. N., Farias, G. A., Silva, C. C., … de Silva Jr., E. F. (2006). Structural, electronic, and optical properties of ZrO2 from ab initio calculations. Journal of Applied Physics, 100, 104103.

Marques, M., Ferreira, L. G., Teles, L. K., & Scolfaro, L. M. R. (2005). Monte Carlo simulations applied to AxByC1-x-yD quaternary alloys: a comparative study of (Al, Ga, In)X (X=As, P or N) systems. Physical  Review B, 71, 205204.

Marques, M., Teles, L. K., Scolfaro, L. M. R., Furthmüller, J., Bechstedt, F., & Ferreira, L. G. (2005). Magnetic properties of MnN: influence of strain and crystal structure. Applied Physics Letters, 86, 164105.

Marques, M., Teles, L. K., Scolfaro, L. M. R., Leite, J. R., & Ferreira, L. G. (2005). Ab initio studies of indium separated phases in AlGaInN quaternary alloys, 2, 2508.

da Cunha Lima, I. C., Rodrigues, S. C. P., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (2005). Controlling the charge and the spin polarization distributions in (In, Ga, Mn)As-based diluted magnetic semiconductor multilayered structures, 18, 61.

Paiva, R., Alves, J. L. A., Nogueira, R. A., Leite, J. R., & Scolfaro, L. M. R. (2005). Cubic binary compounds MnN and MnAs and diluted magnetic Ga1-xMnxN semiconductor alloys: a first-principles study, 288.

Scolfaro, L. M. R., Teles, L. K., Marques, M., Ferreira, L. G., & Leite, J. R. (2004). Phase separation and ordering in cubic ternary and quaternary nitride alloys. In M. Razeghi & M. Henini (Eds.), Optoelectronic Devices Â- III-Nitrides. United Kingdom: Elsevier Ltd.

Alves, H. W. L., Alves, J. L. A., Santos, A. M., Scolfaro, L. M. R., & Leite, J. R. (2004). Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN, 34, 617.

Sipahi, G. M., Rodrigues, S. C. P., Scolfaro, L. M. R., & da C. Lima, I. C. (2004). Charge and spin distribution in ferromagnetic Mn-doped InGaAs/GaAs multilayers, 85, 6209.

Rodrigues, S. C. P., Scolfaro, L. M. R., Leite, J. R., da C. Lima, I. C., Sipahi, G. M., & Boselli, M. A. (2004). Charge and spin distribution in GaMnAs/GaAs Ferromagnetic multilayers. Physical  Review B, 70, 165308.

Paiva, R. de, Alves, J. L. A., Nogueira, R. A., Leite, J. R., & Scolfaro, L. M. R. (2004). Diluted magnetic Ga1-xMnN alloys: a first-principles study. Brazilian Journal of Physics, 34, 647.

Garcia, J. C., Scolfaro, L. M. R., Leite, J. R., Lino, A. T., & Freire, V. N. (2004). Effective masses and dielectric function of cubic HfO2. Applied Physics Letters, 85, 5022.

Garcia, J. C., Lino, A. T., Scolfaro, L. M. R., Leite, L. R., Freire, V. N., Farias, G. A., & da Silva Jr., E. F. (2004). First principles studies of relativistic and spin-orbit effects on the HfO2 band structures. Physica Status Solidi C, 1, s236.

Paiva, R., Alves, J. L. A., Nogueira, R. A., Leite, J. R., & Scolfaro, L. M. R. (2004). First-principles materials study for spintronics: MnAs and MnN, 34, 568.

Sipahi, G. M., Rodrigues, S. C. P., da Cunha Lima, I. C., Scolfaro, L. M. R., & Leite, J. R. (2004). Luminescence spectra in metallic and ferromagnetic GaMnAs/GaAs multilayers: a self-consistent super-cell Luttinger-Kohn k.p. calculation. Physica Status Solidi C Conferences and Critical Reviews, 1, s282.

Marques, M., Teles, L. K., Scolfaro, L. M. R., Ferreira, L. G., & Leite, J. R. (2004). Microscopic description of the phase separation process in AlxGayIn1-x-yN quaternary alloys. Physical Review B, 70, 073202.

Teles, L. K., Marques, M., Scolfaro, L. M. R., Leite, J. R., & Ferreira, L. G. (2004). Phase separation and ordering in group-III nitride alloys. Brazilian Journal of Physics, 34, 593.

Teles, L. K., Marques, M., Ferreira, L. G., Scolfaro, L. M. R., & Leite, J. R. (2004). Phase separation, effects of biaxial strain, and ordered phase formations in cubic nitride alloys. Microelectronics Journal, 35, 53.

Alves, H. W. L., Alves, J. L. A., Santos, A. M., Scolfaro, L. M. R., & Leite, J. R. (2004). Strain-induced shifts of the zone-center phonons of III-Nitrides. Brazilian Journal of Physics, 34, 678.

Coppola, H. R., Sanchez, J. T., Leite, J. R., Scolfaro, L. M. R., & Moliner, F. G. (2004). The absorption coefficient of low dimensional semiconductor systems: The photoluminescence of InGaN quantum dot. Microelectronics Journal, 35, 103.

Teles, L. K., Ferreira, L. G., Scolfaro, L. M. R., & Leite, J. R. (2004). Theoretical study of strain-induced ordering in cubic InxGa1-xN epitaxial layers. Physical Review B, 69, 245317.

Garcia, J. C., Lino, A. T., Scolfaro, L. M. R., Leite, J. R., Freire, V. N., Farias, G. A., & da Silva Jr., E. F. (2004). First principles studies of relativistic and spin-orbit effects on the HfO2 band structures (Vol. 1, p. S26).

Sipahi, G. M., Rodrigues, S. C. P., da Cuhna Lima, I. C., Scolfaro, L. M. R., & Leite, J. R. (2004). Luminescence spectra in metallic and ferromagnetic GaMnAs/GaAs multilayers: a self-consistent super-cell Luttinger-Kohn k.p. calculation (Vol. 1, p. S282).

Ferreira, L. G., Teles, L. K., Leite, J. R., & Scolfaro, L. M. R. (2004). Ordering in cubic AlxGa1-xN and InxGa1-xN alloys due to biaxial strain (Vol. 1, p. S198).

Pereira, T. A. S., Freire, J. A. K., Freire, V. N., Farias, G. A., Scolfaro, L. M. R., & Leite, J. R. (2003). Carrier kinetics in quantum dots through continuous wave photoluminescence modeling: A systematic study on a sample with surface dot density gradient. Journal of Applied Physics, 94, 1787.

Pereira, T. A. S., Freire, J. A. K., Freire, V. N., Farias, G. A., Scolfaro, L. M. R., Leite, J. R., & da Silva Jr., E. F. (2003). Confined excitons in Si/SrTiO3 quantum wells. Microelectronics Journal, 34, 507.

Bechstedt, F., Furthmüller, J., Ferhat, M., Teles, L. K., Scolfaro, L. M. R., Leite, J. R., … Goldhahn, R. (2003). Energy gap and optical properties of InxGa1-xN. Physica Status Solidi A-Applied Research, 195, 628.

Marques, M., Teles, L. K., Anjos, V., Scolfaro, L. M. R., Freire, V. N., Farias, G. A., & da Silva Jr., E. F. (2003). Full-relativistic calculations of the SrTiO3 carrier effective masses and complex dielectric function. Applied Physics Letters, 82, 3074.

Ramos, L. E., Furthmüller, J., Leite, J. R., Scolfaro, L. M. R., & Bechstedt, F. (2003). Group-IV and Group-V Substitutional Impurities in Cubic Group-III Nitrides. Physical  Review B, 68, 85209.

Marques, M., Teles, L. K., Scolfaro, L. M. R., Leite, J. R., Furthmüller, J., & Bechstedt, F. (2003). Lattice parameter and energy band gap of cubic AlxGayIn1-x-y N quaternary alloys. Applied Physics Letters, 83, 890.

Teles, L. K., Ferreira, L. G., Leite, J. R., Scolfaro, L. M. R., Kharchenko, A., Husberg, O., … Lischka, K. (2003). Strain-induced ordering in InxGa1-xN alloys. Applied Physics Letters, 82, 4274.

Scolfaro, L. M. R. (2003). Ab initio calculations of structural properties of zinc blend quaternaryAlxGayIn1-x-yN alloys.

Scolfaro, L. M. R. (2003). Effects of biaxial strain on cubic InxGa1-xN alloys and ordered phase formations.

Paiva, R., Alves, J. L. A., Nogueira, R. A., Leite, J. R., & Scolfaro, L. M. R. (2003). First principles materials study for spintronics: MnAs and MnN.

Scolfaro, L. M. R. (2003). Phase separation and ordering in group- III nitride alloys.

Ramos, L. E., Furthmüller, J., Bechstedt, F., Scolfaro, L. M. R., & Leite, J. R. (2002). Ab initio theory of native defects in alloys: application to charged N vacancies in AlxGa1-xN. Journal of Physics Condensed Matter, 14, 2577.

Vivas, P. G., Silva, E. E., Carvalho, L. C., Scolfaro, L. M. R., Alves, J. L. A., Alves, H. W. L., & Leite, J. R. (2002). Ab initio theory of native defects in alloys: application to charged N vacancies in AlxGa1-xN. Brazilian Journal of Physics, 32, 396.

Ramos, L. E., Furthmüller, J., Leite, J. R., Scolfaro, L. M. R., & Bechstedt, F. (2002). Carbon-based defects in GaN: Doping behavior. Physica Status Solidi B-Basic Research, 234, 864.

Paiva, R., Nogueira, R. A., Oliveira, C., Alves, H. W. L., Scolfaro, L. M. R., Alves, J. L. A., & Leite, J. R. (2002). First principles calculations of the effective mass parameters of Alx Ga1-x N and Znx Cd1-x Te alloys. Brazilian Journal of Physics, 14, 5813.

Rodrigues, S. C. P., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (2002). Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructures. Journal of Physics Condensed Matter, 14, 5813.

Rodrigues, S. C. P., Sipahi, G. M., Scolfaro, L. M. R., Noriega, O. C., Leite, J. R., Frey, T., … Lischka, K. (2002). Inter and Intraband Transitions in Cubic Nitride Quantum Wells. Physica Status Solidi A-Applied Research, 190, 121.

Rodrigues, S. C. P., Scolfaro, L. M. R., Sipahi, G. M., & Leite, J. R. (2002). K.p. calculations of electronic and optical properties of p-doped (001) AlGaN/GaN thin superlattices. Physica Status Solidi B-Basic Research, 234, 906.

Köhler, U., As, D. J., Potthast, A., Kharchenko, K., Lischka, K., Noriega, O. C., … Leite, J. R. (2002). Optical characterization of cubic AlGaN/GaN quantum wells. Physica Status Solidi A-Applied Research, 192.

Teles, L. K., Scolfaro, L. M. R., Furthmüller, J., Leite, J. R., & Bechstedt, F. (2002). Phase diagram, chemical bonds, and gap bowing of cubic InAlN alloys: ab initio calculations. Journal of Applied Physics, 92, 7109.

Scolfaro, L. M. R., Teles, L. K., Furthmüller, J., Tabata, A., Leite, J. R., Bechstedt, F., … Lischka, L. (2002). Phase separation and gap bowing in zinc-blend InGaN, InAlN, BGaN, and BAlN alloy layers. Physica E, 13, 1086.

Scolfaro, L. M. R. (2002). Phase separation in cubic group-III nitride alloys. Physica Status Solidi A-Applied Research, 190, 15.

Tabata, A., Teles, L. K., Scolfaro, L. M. R., Leite, J. R., Kharchenko, A., Lischka, L., … Bechstedt, F. (2002). Phase separation suppression in InGaN epitaxial layers due to biaxial strain. Applied Physics Letters, 80.

Teles, L. K., Scolfaro, L. M. R., Furthmüller, J., Bechstedt, F., & Leite, J. R. (2002). Phase separation, gap bowing, and structural properties of cubic Inx Al1-x N. Physica Status Solidi B-Basic Research, 234.

Noriega, O. C., Leite, J. R., Meneses, E. A., Soares, J. A. N. T., Rodrigues, S. C. P., Scolfaro, L. M. R., … Lischka, K. (2002). Photoluminescence and Photoreflectance characterization of cubic GaN/AlxGa1-xN quantum wells. Physica Status Solidi C, 0.

Husberg, O., Karchenko, A., Vogelsang, H., As, D. J., Lischka, K., Noriega, O. C., … Leite, J. R. (2002). Photoluminescence associated with quantum dots in cubic GaN/InGaN/GaN double heterostructures. Physica E, 13.

Alves, H. W. L., Alves, J. L. A., Scolfaro, L. M. R., & Leite, J. R. (2002). Planar force-constant method for lattice dynamics of cubic III-Nitrides. Brazilian Journal of Physics, 32, 448.

Alves, H. W. L., Alves, J. L. A., Scolfaro, L. M. R., & Leite, J. R. (2002). Planar force-constant method for lattice dynamics of cubic InN. Materials Science and Engineering B, 93, 90.

Teles, L. K., Scolfaro, L. M. R., Leite, J. R., Furthmüller, J., & Bechstedt, F. (2002). Spinodal decomposition in BxGa1-xN and BxAl1-xN alloys. Applied Physics Letters, 80, 1177.

Ramos, L. E., Furthmüller, J., Scolfaro, L. M. R., Leite, J. R., & Bechstedt, F. (2002). Substitutional carbon in III-nitrides: ab initio description of shallow and deep levels. Physical Review B, 66, 75209.

Paiva, R., Alves, J. L. A., Nogueira, R. A., Oliveira, C., Alves, H. W. L., Scolfaro, L. M. R., & Leite, J. R. (2002). Theoretical study of the AlxGa1-xN alloys. Materials Science and Engineering B, 93, 2.

Marques, M., Scolfaro, L. M. R., Teles, L. K., Anjos, V., Freire, V. N., Farias, G. A., … Leite, J. R. (2002). Ab initio calculations of electronic and dielectric properties of cubic SrTiO3.

Furthmüller, J., Ramos, L. E., Bechstedt, F., Scolfaro, L. M. R., & Leite, J. R. (2002). Carbon-based defects in GaN: Doping behavior.

Pereira, T. A. S., Freire, J. A. K., Freire, V. N., Farias, G. A., Scolfaro, L. M. R., Leite, J. R., & da Silva Jr., E. F. (2002). Confined excitons in SrTiO3/Si/SrTiO3 quantum wells.

Noriega, O. C., Leite, J. R., Meneses, E. A., Rodrigues, S. C. P., Scolfaro, L. M. R., Sipahi, G. M., … Lischka, K. (2002). Photoluminescence and photoreflectance characterization of cubic GaN/AlGaN quantum wells. 4th International Workshop on Nitride Semiconductors (IWN-2002).

Scolfaro, L. M. R., Marques, M., Teles, L. K., & Leite, J. R. (2002). Structural and electronic properties of AlGaInN quaternary alloys: ab initio calculations.

Scolfaro, L. M. R. (2002). Structural and electronic properties of AlGaInN quaternary alloys: ab initio calculations.

Rodrigues, S. C. P., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (2001). Exchange-correlation effects on the hole miniband structure and confinement potential in zinc blend AlxGa1-xN/GaN superlattices. Journal of Physics Condensed Matter, 13, 3381.

Teles, L. K., Furthmüller, J., Scolfaro, L. M. R., Leite, J. R., & Bechstedt, F. (2001). Influence of composition fluctuations and strain on gap bowing in InxGa1-xN. Physical Review B, 63, 85204.

Ramos, L. E., Teles, L. K., Scolfaro, L. M. R., Castineira, J. L. P., Rosa, A. L., & Leite, J. R. (2001). Structural, electronic, and effective-mass properties of silicon and zinc-blend group-III nitride semiconductor compounds. Physical Review B, 63, 16521.

Rodrigues, S. C. P., Sipahi, F. M., Scolfaro, L. M. R., & Leite, J. R. (2001). Structural, electronic, and effective-mass properties of silicon and zinc-blend group-III nitride semiconductor compounds. Valence-band structures of undoped and p-doped cubic GaN/InGaN multiple quantum wells. Physical Review B, 302, 106.

Scolfaro, L. M. R., Sipahi, G. M., Rodriguez, S. C. P., & Leite, J. R. (2001). Calculated luminescence spectra of GaAs/GaAsN derived heterostructures.

Scolfaro, L. M. R., Sipahi, G. M., Rodriguez, S. C. P., & Leite, J. R. (2001). Electronic properties of GaAs/GaAsN multiple quantum wells.

Lemos, V., Silveira, E., Leite, J. R., Tabata, A., Trentin, R., Scolfaro, L. M. R., … Lischka, K. (2000). Evidence for phase-separated quantum dots in cubic InGaN layers from resonant Raman scattering. Physical Review Letters, 84, 3666.

Teles, L. K., Furthmüller, J., Scolfaro, L. M. R., Leite, J. R., & Bechstedt, F. (2000). First-principles calculations of thermodynamic and structural properties of strained AlxGa1-xN and InxGa1-xN alloys. Physical Review B, 62, 2475.

Pusep, Y. A., Silva, M. T. O., Galzerani, J. C., Rodrigues, S. C. P., Scolfaro, L. M. R., Lima, A. P., … Basmaji, P. (2000). Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures. Journal of Applied Physics, 87, 1825.

Rodrigues, S. C. P., Scolfaro, L. M. R., Leite, J. R., & Sipahi, G. M. (2000). Valence band structure of cubic AlGaN/GaN superlattices. Applied Physics Letters, 76, 1015.

Marques, M., Ramos, L. E., Scolfaro, L. M. R., Teles, L. K., & Leite, J. R. (2000). Carbon acceptor impurity in cubic BN, AlN, GaN, and in the GaAlN alloy.

Rodrigues, S. C. P., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (2000). Cubic AlGaN/GaN and GaN/InGaN heterostructures: effects of p-type-doping (Vol. 1, p. 74).

Teles, L. K., Furthmüller, J., Scolfaro, L. M. R., Leite, J. R., & Bechstedt, F. (2000). Influence of biaxial strain on thermodynamic, structural, and electronic properties of InxGa1-xN alloys (Vol. 1, p. 689).

Tabata, A., Frey, T., Karchenko, A., Teles, L. K., Scolfaro, L. M. R., As, D. J., … Leite, J. R. (2000). Phase separation suppression in InGaN alloys due to biaxial strain.

Alves, H. W. L., Alves, J. L. A., Scolfaro, L. M. R., & Leite, J. R. (2000). Planar force-constant method for lattice dynamics of cubic InN (Vol. 639).

Scolfaro, L. M. R., Tabata, Teles, L. K., Frey, A., Kharchenko, A., Furthmüller, J., … Leite, J. R. (2000). Spinodal phase separation suppression in cubic InxGa1-xN alloys induced by biaxial strain (Vol. 1537).

Levine, A., da Silva, E. C. F., Sipahi, G. M., Quivy, A. A., Scolfaro, L. M. R., Leite, J. R., … Oliveira, A. G. (1999). Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers. Physical Review B, 59, 4634.

Tabata, A., Silveira, E., Leite, K. R., Scolfaro, L. M. R., Trentin, R., Lemos, V., … Lischka, K. (1999). Raman scattering study of zincblende InxGa1-xN alloys. Physica Status Solidi B, 216, 769.

Teles, L. K., Leite, J. R., Scolfaro, L. M. R., Ramos, L. E., Castineira, J. L. P., & As, D. J. (1999). Relaxation effects on the negatively charged Mg impurity in zincblende GaN. Physica Status Solidi B, 216, 541.

Rosa, A. L., Scolfaro, L. M. R., Leite, J. R., & Sipahi, G. M. (1999). Rigorous hole band structure calculations of p-type delta-doping superlattices in silicon. Superlattices and Microstructures, 25, 67.

Tabata, A., Lima, A. P., Teles, L. K., Scolfaro, L. M. R., Leite, J. R., Lemos, V., … Lischka, K. (1999). tructural properties and Raman Modes of Zincblende InN Epitaxial Layers. Applied Physics Letters, 74, 362.

Enderlein, R., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (1998). Density Functional Theory for Holes in Semiconductors. Physical Review Letters, 80, 3159.

Alves, A. R., Guimarães, P. S. S., Cury, L. A., Moreira, M. V. B., Lino, A. T., & Scolfaro, L. M. R. (1998). Electrical and Optical Correlation in the Study of the Depopulation Effect in Asymmetric Quantum Wells. Physical Review B, 58, 6720.

Castineira, J. L. P., Leite, J. R., da Silva, J. L. F., Scolfaro, L. M. R., Alves, J. L. A., & Alves, H. W. L. (1998). Electronic structure and stability of Be impurities in cubic Boron Nitride. Physica Status Solidi B, 210, 401.

Beliaev, D., Scolfaro, L. M. R., Leite, J. R., & Sipahi, G. M. (1998). Exchange-correlation effects on a multicomponent hole gas in semiconductors. Physica Status Solidi B, 210, 777.

Pusep, Y. A., Silva, M. T. O., Galzerani, J. C., da Silva, S. W., Scolfaro, L. M. R., Enderlein, R., … Leite, J. R. (1998). Fano-like electron-phonon interference in delta-doping GaAs superlattices. Superlattices and Microstructures, 23, 1033.

Castineira, J. L. P., Leite, J. R., Scolfaro, L. M. R., Enderlein, R., Alves, J. L. A., & Alves, H. W. L. (1998). First principles studies of point defects and impurities in cubic Boron nitride. Materials Science and Engineering, 51, 53.

Rosa, A. L., Scolfaro, L. M. R., Sipahi, G. M., Enderlein, R., & Leite, J. R. (1998). Hole Band Structure of p-type Delta-Doping Quantum Wells in Silicon. Microelectronic Engineering, 43–4, 489.

Rodrigues, S. C. P., Rosa, A. L., Scolfaro, L. M. R., Beliaev, D., Leite, J. R., Enderlein, R., & Alves, J. L. A. (1998). Miniband Structure and Effective Masses of Delta-Doped Layers in GaN. Semiconductor Science and Technology, 13, 981.

Tabata, A., Levine, A., Ceschin, A. M., Quivy, A. A., Scolfaro, L. M. R., Enderlein, R., & Leite, J. R. (1998). Optical properties of GaAs/AlGaAs Selectively Doped Quantum Well Structures. Journal of Radiation Effects and Defects in Solids, 146, 207.

Rosa, A. L., Scolfaro, L. M. R., Sipahi, G. M., Enderlein, R., & Leite, J. R. (1998). p-Type Delta-Doping Quantum Wells in Silicon: Self-Consistent Hole Potentials and Band Structures. Physical Review B, 58, 15675.

Levine, A., da Silva, E. C. F., Scolfaro, L. M. R., Beliaev, D., Quivy, A. A., Enderlein, R., & Leite, J. R. (1998). Spatially Direct Recombination observed in Multiple Delta-doped GaAs Layers. Superlattices and Microstructures, 23, 301.

Castineira, J. L. P., Leite, J. R., Scolfaro, L. M. R., Enderlein, R., Alves, J. L. A., & Alves, H. W. L. (1998). Stability of Native Defects in c-BN. Journal of Radiation Effects and Defects in Solids, 146, 49.

Da Silva, J. L. F., Enderlein, R., Scolfaro, L. M. R., Leite, J. R., Tabata, A., Lischka, K., … Bechstedt, F. (1998). Surface Reconstruction and MBE Growth of Cubic GaN on (001) GaAs: A Total Energy Study. Materials Science Forum, 264, 1197.

Sipahi, G. M., Enderlein, R., Scolfaro, L. M. R., Leite, J. R., da Silva, E. C. F., & Levine, A. (1998). Theory of Luminescence Spectra from Delta-doping Structures: Application to GaAs. Physical Review B, 57, 9168.

Takahashi, E. K., Lino, A. T., & Scolfaro, L. M. R. (1997). Electron Subband Levels of n-Type Delta-doped Quantum Wells under in-Plane Magnetic Fields. International Journal of Modern Physics B, 11, 1195.

Sipahi, G. M., Enderlein, R., Scolfaro, L. M. R., & Leite, J. R. (1997). Exchange-Correlation Effects in the Hole Band Structure of p-type delta-doping Quantum Wells and Superlattices. Shallow Level Centers in Semiconductors, 1, 209.

Ramos, L. E., Sipahi, G. M., Scolfaro, L. M. R., Enderlein, R., & Leite, J. R. (1997). Minibands of p-type delta-doping superlattices in GaAs. Superlattices and Microstructures, 22, 443.

Soler, M. A. G., Depeyrot, J., Scolfaro, L. M. R., da Silva, E. C. F., Enderlein, R., Weimann, G., & Trankle, G. (1997). Photoreflectance measurements in GaAs/AlGaAs asymmetric quantum wells. Superlattices and Microstructures, 21, 581.

Sipahi, G. M., Enderlein, R., Scolfaro, L. M. R., & Leite, J. R. (1996). Band Structure of Holes in p-type delta-doping Quantum Wells and Superlattices. Physical Review B, 53, 9930.

Pusep, Y. A., Silva, M. T. O., Galzerani, J. C., da Silva, S. W., Scolfaro, L. M. R., Enderlein, R., … Leite, J. R. (1996). Raman Study of Fano-like electron-phonon coupling in delta-doping GaAs Superlattices. Physical Review B, 54, 13927.

Teles, L. K., Scolfaro, L. M. R., Enderlein, R., Leite, J. R., Josiek, A., Schikora, D., & Lischka, K. (1996). Structural Properties of Cubic GaN Epitaxial Layers Grown on SiC. Journal of Applied Physics, 80, 6322.

Rodrigues, S. C. P., Scolfaro, L. M. R., Enderlein, R., Quivy, A. A., Lima, A. P., Leite, J. R., … Galzerani, J. C. (1996). Investigation of the Vertical Transport in GaAs-delta-doping SLs by Raman Studies of Coupled Plasmon Phonon Modes (Vol. 3, p. 2343).

Castineira, J. L. P., Leite, J. R., Scolfaro, L. M. R., Enderlein, R., Alves, J. L. A., & Bajaj, K. K. (1996). Nitrogen Antisite Defect in Zincblende-type Boron Nitride (Vol. 4, p. 2901).

Teles, L. K., Scolfaro, L. M. R., Enderlein, R., Leite, J. R., Josiek, A., & Lischka, K. (1996). Total Energy Study of the Epitaxial Growth of Cubic GaN on SiC (Vol. 1, p. 577).

Enderlein, R., Sipahi, G. M., Scolfaro, L. M. R., Leite, J. R., & Dias, I. F. L. (1995). Comparative Studies of Photoluminescence from n- and p-delta-Doping Wells in GaAs. Materials Science and Engineering B, 35, 396.

Leite, J. R., Rodrigues, S. C. P., Scolfaro, L. M. R., Enderlein, R., Beliaev, D., & Quivy, A. A. (1995). Electrical Conductivity of Delta-Doping Superlattices Parallel to the Growth Direction. Materials Science Engineering B, 35, 250.

Scolfaro, L. M. R., Beliaev, D., Enderlein, R., & Leite, J. R. (1995). Energy Levels due to n-Type Delta-Doping in Silicon. Solid State Communications, 93, 49.

Enderlein, R., Beliaev, D., Soares, J. A. N. T., Scolfaro, L. M. R., & Leite, J. R. (1995). Method for Calculating Photo- and Electroreflectance Spectra from Semiconductor Heterostructures. Physical Review B, 52, 2814.

Soares, J. A. N. T., Beliaev, D., Enderlein, R., Scolfaro, L. M. R., & Leite, J. R. (1995). Investigations of Semiconductor Device Structures. Materials Science and Engineering B, 35, 267.

Scolfaro, L. M. R., Beliaev, D., Leite, J. R., Lino, A. T., & Takahashi, E. K. (1994). Electronic Properties of Multiple Delta-Doped Layers in Silicon and GaAs. International Journal of Quantum Chemistry S, 28, 667.

Scolfaro, L. M. R., Leite, J. R., Mendonca, C. A. C., Beliaev, D., Shibli, S. M., da Silva, E. C. F., & Meneses, E. A. (1994). Electronic States of n-Type Delta-Doping in GaAs Heterostructures. Materials Science Forum, 143, 669.

Scolfaro, L. M. R., Beliaev, D., Enderlein, R., & Leite, J. R. (1994). Electronic Structure of n-Type Delta-doping Multiple Layers Superlattices in Silicon. Physical Review B, 50, 8699.

Beliaev, D., Enderlein, R., Soares, J. A. N. T., Scolfaro, L. M. R., Ceschin, A. M., Quivy, A. A., & Leite, J. R. (1994). Photo-and Electroreflectance Spectra from Spatially Inhomogeneous Heterostructures Calculated by Means of a New Method. Superlattices and Microstructures, 15, 339.

Ceschin, A. M., Quivy, A. A., Soares, J. A. N. T., Enderlein, R., Tabata, A., Scolfaro, L. M. R., … Leite, J. R. (1994). Photoluminescence and Photoreflectance Studies on Delta-Doped In(0.15)Ga(0.85)As/GaAs Quantum Wells. Superlattices and Microstructures, 15, 333.

Enderlein, R., Scolfaro, L. M. R., & Leite, J. R. (1994). Plateau Behavior and the Metal-Insulator Transition in Delta-Doping Superlattices for transport along the growth direction. Physical Review B, 50, 18312.

Beliaev, D., Scolfaro, L. M. R., & Leite, J. R. (1994). Theoretical Investigation of Differential Photoreflectance Spectra from Planar-Doped Layers in Semiconductors. Brazilian Journal of Physics, 24, 270.

Sipahi, G. M., Enderlein, R., Scolfaro, L. M. R., & Leite, J. R. (1994). Band Structure of Holes in p-delta-Doping Superlattices (Vol. 1, p. 687).

Shibli, S. M., Henriques, A. B., Mendonça, C. A. C., da Silva, E. C. F., Meneses, E. A., Scolfaro, L. M. R., & Leite, J. R. (1993). Theoretical Investigation of Differential Photoreflectance Spectra from Planar-Doped Layers in Semiconductors. Journal of Crystal Growth, 127, 700.

Scolfaro, L. M. R., Pinatel, R., Fazzio, A., & Leite, J. R. (1993). Electronic States Induced by a Ga Vacancy in the GaAsP Alloy. International Journal of Quantum Chemistry S, 27, 123.

Mendonça, C. A. C., Plentz, F., Oliveira, J. B. B., Meneses, E. A., Scolfaro, L. M. R., Beliaev, D., … Leite, J. R. (1993). Electronic States Induced by a Ga Vacancy in the GaAsP Alloy. Physical Review B, 48, 12326.

Beliaev, D., Scolfaro, L. M. R., & Leite, J. R. (1993). New Theoretical Model for Optical Transitions in the Photoreflectance Spectrum from Delta-Doped Structures. Semiconductor Science and Technology, 8, 1479.

Mendonça, C. A. C., Scolfaro, L. M. R., Henriques, A. B., Oliveira, J. B., Plentz, F., Shibli, S. M., … Leite, J. R. (1993). Hole Confinement Effects in Periodically Delta-Doped GaAs Layers (Vol. 2, p. 1084).

Mendonça, C. A. C., Scolfaro, L. M. R., Oliveira, J. B., Plentz, F., Miçovic, F., Leite, J. R., & Meneses, E. A. (1992). Electronic Properties of Si Delta-Doped GaAs Quantum Wells. Superlattices and Microstructures, 12, 257.

Pinatel, R., Scolfaro, L. M. R., & Leite, J. R. (1992). Electronic Properties of Si Delta-Doped GaAs Quantum Wells. Materials Science Forum, 83–87, 707.

Shibli, S. M., Scolfaro, L. M. R., Leite, J. R., Mendonca, C. A. C., Plentz, F., & Meneses, E. A. (1992). Hole Confinement Effects on Multiple Si Delta-doping in GaAs. Applied Physics Letters, 60, 2895.

Enderlein, R., Scolfaro, L. M. R., Martins, J. M. V., & Leite, J. R. (1992). Line Shape Analysis of Photoreflectance Spectra from Delta-Doping Structures. Superlattices and Microstructures, 12, 175.

Scolfaro, L. M. R., Camata, R. P., Martins, J. M. V., & Leite, J. R. (1992). On the Influence of Electric Fields in the Si Delta-Doped GaAs Self-Consistent Potential Profile. Superlattices and Microstructures, 12, 203.

Pinatel, R., Scolfaro, L. M. R., & Leite, J. R. (1992). Hydrostatic Pressure Effects on Si and Sn Doped GaAs (Vol. 1, p. 322).

Souza, J. C., Guedes, G. P., Mota, F. B., Pepe, B. L., David, D. G. F., Filho, J. B. V. S., … Leite, J. R. (1992). On the Use of Photoacustic and Photoconductivity Techniques for Investigating the Optical Properties of Semiconductors (Vol. 1, p. 509).

Camata, R. P., Scolfaro, L. M. R., Martins, J. M. V., Leite, J. R., Mendonça, C. A. C., Meneses, E. A., … Bezerra, J. C. (1992). Temperature Dependence of the Built-in Electric Field in Delta-Doping GaAs (Vol. 1, p. 371).

Rodrigues, R., Guimãres, P. S. S., Sampaio, J. F., Nogueira, R. A., Oliveira Jr., A. T., Dias, I. F. L., … Scolfaro, L. M. R. (1991). On the Influence of Electric Fields in the Si Delta-Doped GaAs Self-Consistent Potential Profile. Solid State Communications, 78, 793.

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