Faculty Profiles

Nugera, F. A., Anderson, J. W., Devkota, D., Aryal, G., Anderson, J. H., Engdahl, C., … Holtz, M. W. (2025). Lateral growth of diamond based on precise seeding patterns using electron-beam lithography. Functional Diamond, 5(1), 2533893. https://doi.org/10.1080/26941112.2025.2533893

Nugera, F., Devkota, D., K.C., A., Ayala, A. G., Aryal, G., Engdahl, C., … Holtz, M. W. (2024). Effect of CH4 concentration on the early growth stage of patterned diamond using high seeding density and hot filament chemical vapor deposition. Journal of Materials Science, 59, 6835–6848. https://doi.org/10.1007/s10853-024-09641-1

Taqy, S., Sarkar, P., Hamid, M. A., Pranto, T., Piner, E. L., Droopad, R., & Haque, A. (2024). Diamond Deposition on AlN Using Q-Carbon Interlayer Through Overcoming the Substrate Limitations. Carbon, 219, 118809 1-13. https://doi.org/10.1016/j.carbon.2024.118809

Dey, T., Arbogast, A. W., Meng, Q., Reza, M. S., Muhowski, A. J., Cooper, J., … Wistey, M. A. (2023). Influence of H on Sn Incorporation in GeSnC Alloys Grown Using Molecular Beam Epitaxy. Journal of Applied Physics, 134(19), 193102. https://doi.org/https://doi.org/10.1063/5.0173429

Saha, R., Anderson, J. W., Holtz, M. W., & Piner, E. L. (2023). Atomic layer deposition of Al2O3 interlayer for improving AlN growth on silicon substrates. Journal of Vacuum Science & Technology A, 41(5), 053208. https://doi.org/10.1116/6.0002760

K.C., A., Anderson, J. W., Ayala, A. G., Engdahl, C., Piner, E. L., & Holtz, M. W. (2023). Heterogeneous integration of high-quality diamond on aluminum nitride with low and high seeding density. Journal of Crystal Growth, 610, 127172. https://doi.org/https://doi.org/10.1016/j.jcrysgro.2023.127172

Anupam, K. C., Siddique, A., Anderson, J. W., Saha, R., Gautam, C., Ayala, A. G., … Piner, E. L. (2022). Preferentially oriented growth of diamond films on silicon with nickel interlayer. SN APPLIED SCIENCES, 4(8). https://doi.org/10.1007/s42452-022-05092-y

Piner, E., & Holtz, M. W. (2022). Three-dimensional integration of diamond and GaN. In Thermal Management of Gallium Nitride Electronics. Elsevier. Retrieved from https://www.elsevier.com/books/thermal-management-of-gallium-nitride-electronics/tadjer/978-0-12-821084-0

Siddique, A., Ahmed, R., Anderson, J. W., Holtz, M. W., & Piner, E. L. (2021). Improved Electrical Properties of AlGaN/GaN High-Electron-Mobility Transistors by In Situ Tailoring the SiNx Passivation Layer. ACS Applied Materials \& Interfaces, 13, 18264–18273. https://doi.org/10.1021/acsami.1c01241

K. C.,Anupam, Saha, R., Anderson, J. W., Ayala, A. G., Engdahl,Christopher, Piner, E. L., & Holtz, M. W. (2021). Effect of seeding density on the growth of diamond films by hot-filament chemical vapor deposition from sparse to dense range. Journal of Applied Physics, 130(22), 225302. https://doi.org/10.1063/5.0068541

Ahmed, R., Siddique, A., Anderson, J. W., Gautam, C., Holtz, M. W., & Piner, E. L. (2020). Integration of GaN and Diamond Using Epitaxial Lateral Overgrowth. ACS Applied Materials \& Interfaces, 12(35), 39397–39404. https://doi.org/10.1021/acsami.0c10065

Ahmed, R., Siddique, A., Saha, R., Anderson, J. W., Engdahl, C., Holtz, M. W., & Piner, E. L. (2020). Effect of precursor stoichiometry on morphology, phase purity, and texture formation of hot filament CVD diamond films grown on Si (100) substrate. Journal of Materials Science: Materials in Electronics, 31, 8597–8606. https://doi.org/10.1007/s10854-020-03395-7

Siddique, A., Ahmed, R., Anderson, J. W., Nazari, M., Yates, L., Graham, S., … Piner, E. L. (2019). Structure and Interface Analysis of Diamond on an AlGaN/GaN HEMT Utilizing an in Situ SiNx Interlayer Grown by MOCVD. ACS Applied Electronic Materials, 0(0), null. https://doi.org/10.1021/acsaelm.9b00131

Siddique, A., Ahmed, R., Anderson, J., & Piner, E. L. (2019). Effect of Reactant Gas Stoichiometry of in-situ SiNx Passivation on Structural Properties of MOCVD AlGaN/GaN HEMTs. Journal of Crystal Growth, 517(0), 28–34. https://doi.org/10.1016/j.jcrysgro.2019.03.020

Ahmed, R., Siddique, A., Anderson, J., Engdahl, C., Holtz, M. W., & Piner, E. L. (2019). Selective Area Deposition of Hot Filament CVD Diamond on 100 mm MOCVD Grown AlGaN/GaN Wafers. Crystal Growth \& Design, 19(0), 672–677. https://doi.org/10.1021/acs.cgd.8b01260

Yates, L., Anderson, J., Gu, X., Lee, C., Bai, T., Mecklenburg, M., … Graham, S. (2018). Low Thermal Boundary Resistance Interfaces for GaN-on-Diamond Devices. ACS Appl. Mater. Interfaces, 10(28), 24302–24309. https://doi.org/10.1021/acsami.8b07014

Ahmed, R., Nazari, M., Hancock, B. L., Simpson, J., Engdahl, C., Piner, E. L., & Holtz, M. W. (2018). Ultraviolet micro-Raman stress map of polycrystalline diamond grown selectively on silicon substrates using chemical vapor deposition. Applied Physics Letters, 112(18), 181907. https://doi.org/10.1063/1.5027507

Squires, B., Hancock, B. L., Nazari, M., Anderson, J., Hobart, K. D., Feygelson, T. I., … Holtz, M. W. (2017). Hexagonal boron nitride particles for determining the thermal conductivity of diamond films based on near-ultraviolet micro-Raman mapping. Journal of Physics D, 50, 24LT01. https://doi.org/10.1088/1361-6463/aa6f44

Nazari, M., Hancock, B. L., Anderson, J., Hobart, K. D., Feygelson, T. I., Tadjer, M. J., … Holtz, M. W. (2017). Optical Characterization and Thermal Properties of CVD Diamond Films for Integration with Power Electronics. Solid-State Electronics, 136, 12–17. https://doi.org/10.1016/j.sse.2017.06.025

Berber, F., Johnson, D. W., Sundqvist, K. M., Piner, E. L., Huff, G. H., & Harris, H. R. (2017). RF Dielectric Loss Due to MOCVD Aluminum Nitride on High Resistivity Silicon. Transactions on Microwave Theory and Techniques, 65(5). https://doi.org/10.1109/TMTT.2017.2656865

Piner, E. L. (2017). Gallium Nitride on Silicon. In ECS Transactions (2nd ed., Vol. 77, pp. 95–98). https://doi.org/10.1149/07702.0095ecst

Hancock, B. L., Nazari, M., Anderson, J., Piner, E. L., & Holtz, M. W. (2017). Implementations of CVD Diamond on GaN device layers: Optical Characterization of Wafer-scale Stress Uniformity. IEEE. https://doi.org/10.1109/ITHERM.2017.8023954

Anderson, J., Hancock, B. L., Nazari, M., Goorsky, M., Holtz, M. W., & Piner, E. L. (2017). Structure of Diamond-Silicon Interfaces. IEEE. https://doi.org/10.1109/ITHERM.2017.7992498

Hancock, B. L., Nazari, M., Anderson, J., Piner, E. L., Faili, F., Oh, S., … Holtz, M. W. (2017). Ultraviolet and visible micro-Raman and micro-photoluminescence spectroscopy investigations of stress on a 75-mm GaN-on-diamond wafer. Physica Status Solidi c, 1600247-n/a. https://doi.org/10.1002/pssc.201600247

Nazari, M., Hancock, B. L., Anderson, J., Savage, A., Piner, E. L., Graham, S., … Holtz, M. W. (2016). Near-ultraviolet micro-Raman study of diamond grown on GaN. Applied Physics Letters, 108(3), 031901. https://doi.org/10.1063/1.4940200

Hancock, B. L., Nazari, M., Anderson, J., Piner, E. L., Faili, F., Oh, S., … Holtz, M. W. (2016). Ultraviolet micro-Raman spectroscopy stress mapping of a 75-mm GaN-on-diamond wafer. Applied Physics Letters, 108(21). https://doi.org/10.1063/1.4952596

Olson, D. W., & Piner, E. L. (n.d.). Dating Monet’s Le Port du Havre, Effet de Nuit. In Monet au Havre, Les Années Décisives.

Nazari, M., Hancock, B. L., Piner, E. L., & Holtz, M. W. (2015). Self-heating Profile in an AlGaN/GaN Heterojunction Field-Effect Transistor Studied by Ultraviolet and Visible Micro-Raman Spectroscopy. IEEE Trans. Electron Devices, 62(5), 1467–1472. https://doi.org/10.1109/TED.2015.2414718

Johnson, D. W., Ravikirthi, P., Suh, J. W., Lee, R. T. P., Hill, R., Wong, M. H., … Harris, H. R. (2014). Challenges of Contact Module Integration for GaN-based Devices in a Si-CMOS Environment. J. Vac. Sci. Technol. B, 32. https://doi.org/10.1116/1.4874801

Johnson, D. W., Lee, R. T., Hill, R. J., Wong, M. H., Bersuker, G., Piner, E. L., … Harris, H. R. (2013). Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology. IEEE Trans. Electron Devices, 60(10), 3197–3203. https://doi.org/10.1109/TED.2013.2282460

Harris, H. R., Johnson, D., Hill, R., Piner, E., Wong, M., & Lee, R. (2013). High Voltage GaN Technology in a Silicon CMOS Environment: Challenges and Opportunities.

Mathew, L., Rao, R., Piner, E., Fossum, J., & Banerjee, S. (2013). Multi-Gate Device Architectures for GaN Based Power Switching Devices (pp. 23–34).

Johnson, D. W., Rezanezhad-Gatabi, I., Woo, J.-H., Lee, K.-K., Piner, E. L., & Harris, H. R. (2013). Systematic Determination of Interface States and Charge Trapping Phenomenon in AlGaN/GaN MOS-HEMT Gate Stack.

Gatabi, I. R., Johnson, D. W., Woo, J. H., Anderson, J. W., Coan, M. R., Piner, E. L., & Harris, H. R. (2013). PECVD Silicon Nitride Passivation of AlGaN/GaN Heterostructures. IEEE Trans. Electron Devices, 60(3), 1082–1087. https://doi.org/10.1109/TED.2013.2242075

Ueda, O., Fukuda, M., Shiojima, K., & Piner, E. (2012, November). Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II,. New York, NY, USA: Cambridge University Press.

Blake, A. H., Caselli, D., Durot, C., Mueller, J., Parra, E., Gilgen, J., … Fischer, A. J. (2012). InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes Grown on Si(111) Substrates with ZrB2(0001) Buffer Layers. J. Appl. Phys., 111(3). https://doi.org/10.1063/1.368557

Johnson, W., & Piner, E. L. (2012). GaN HEMT Technology. In GaN and ZnO-based Materials and Devices, Springer Series in Materials Science (Vol. 156, pp. 209–237). Berlin: Springer-Verlag. https://doi.org/10.1007/978-3-642-23521-4_7

Piner, E. L. (2011). Fabrication of AlGaN/GaN/AlGaN Double Heterostructure HEMT on Diamond.

Piner, E. L. (2011). Integration of Gallium Nitride and Silicon:  From Devices to Diamond. IEEE. https://doi.org/10.1109/SOI.2011.6081705

Chu, B. H., Chang, C. Y., Kroll, K., Denslow, N., Wang, Y.-L., Pearton, S. J., … Ren, F. (2011). Detection of Vitellogenin, an Endocrine Disrupter Biomarker, Using AlGaN/GaN High Electron Mobility Transistors. Phys. Stat. Sol. (C), 8(7–8), 2486–2488. https://doi.org/DOI: 10.1002/pssc.201001171

Sun, H., Alt, A. R., Tirelli, S., Marti, D., Benedickter, H., Piner, E. L., & Bolognesi, C. R. (2011). Nanometric AlGaN/GaN HEMT Performance with Implant or Mesa Isolation. IEEE Electron Device Lett., 32(8), 1056–1058. https://doi.org/10.1109/LED.2011.2151172

Ryu, K. K., Roberts, J. C., Piner, E. L., & Palacios, T. (2011). Thin-body N-face GaN Transistor Fabricated by Direct Wafer Bonding. IEEE Electron Device Lett., 32(7), 895–897. https://doi.org/10.1109/LED.2011.2147751

Zhou, C., Chen, W., Piner, E. L., & Chen, K. J. (2010). Self-Protected GaN Power Devices with Reverse Drain Blocking and Forward Current Limiting Capabilities. In Proceedings of Power Semiconductor Devices & IC’s (ISPSD).

Lu, B., Piner, E. L., & Palacios, T. (2010). Breakdown Mechanism in AlGaN/GaN HEMTs on Si Substrate. https://doi.org/10.1109/DRC.2010.5551907

Zhou, C., Chen, W., Piner, E. L., & Chen, K. J. (2010). Schottky-Ohmic Drain AlGaN/GaN Normally Off HEMT With Reverse Drain Blocking Capability. IEEE Electron Device Lett., 31(7), 668–670. https://doi.org/10.1109/LED.2010.204885

Wang, Y.-L., Chang, C. Y., Lim, W., Pearton, S. J., Norton, D. P., Chu, B. H., … Linthicum, K. J. (2010). Oxygen Gas Sensing at Low Temperature Using Indium Zinc Oxide-gated AlGaN/GaN High Electron Mobility Transistors. J. Vacuum Science & Technology B, 28(L5), 376. https://doi.org/10.1116/1.3368467

Tirelli, S., Marti, D., Sun, H., Alt, A. R., Benedickter, H., Piner, E. L., & Bolognesi, C. R. (2010). 107-GHz (Al,Ga)N/GaN HEMTs on Silicon with Improved Maximum Oscillation Frequencies. IEEE Electron Device Lett., 31(4), 296–298. https://doi.org/10.1109/LED.2010. 2039847

Lu, B., Piner, E. L., & Palacios, T. (2010). Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors. IEEE Electron Device Lett., 31(4), 302–304. https://doi.org/10.1109/LED.2010.2040704

Chu, B. H., Kang, B. H., Chang, C. Y., Ren, F., Goh, A., Sciullo, A., … Linthicum, K. J. (2010). Wireless Detection System for Glucose and pH Sensing in Exhaled Breath Condensate Using AlGaN/GaN High Electron Mobility Transistors. IEEE Sensors Journal, 10(1), 64–70. https://doi.org/10.1109/JSEN.2009.2035213

Chu, B.-H., Lin, H.-W., Gwo, S., Wang, Y.-L., Pearton, S. J., Johnson, J. W., … Ren, F. (2010). Chloride Ion Detection by InN Gated AlGaN/GaN High Electron Mobility Transistors. J. Vacuum Science & Technology B, 28, L5. https://doi.org/10.1116/1.3271253

Zhou, C., Chen, W. J., Piner, E. L., & Chen, K. J. (2009). AlGaN/GaN Dual-Channel Lateral Field-Effect Rectifier with Punch-Through Breakdown Immunity and Low On-Resistance. IEEE Electron Device Lett., 31(1), 5–7. https://doi.org/10.1109/LED.2009.2034761

Saadat, O. I., Chung, J. W., Piner, E. L., & Palacios, T. (2009). Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications. IEEE Electron Device Lett., 30(12), 1254–1256. https://doi.org/10.1109/LED.2009.2032938

Ueda, O., Fukuda, M., Pearton, S., Piner, E. L., & Montangero, P. (2009, November). Reliability and Materials Issues of Semiconductor Optical and Electrical Devices & Materials. New York, NY, USA: Cambridge University Press.

Chen, K.-H., Ren, F., Pais, A., Xie, H., Gila, B. P., Pearton, S. J., … Linthicum, K. J. (2009). Cu-Plated Through-Wafer Vias for AlGaN/GaN High Electron Mobility Transistors on Si. J. Vacuum Science & Technology. B, Microelectronics And Nanometer Structures: Processing, Measurement, And Phenomena, 27(5), 2166. https://doi.org/10.1116/1.3212931

Chung, J. W., Lee, J., Piner, E. L., & Palacios, T. (2009). Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs. IEEE Electron Device Lett., 30(10), 1015–1017. https://doi.org/10.1109/LED.2009.2027914

Reed, E. J., Armstrong, M. R., Kim, K. Y., Glownia, J. H., Howard, M., Piner, E. L., & Roberts, J. (2009). Coherent THz Electromagnetic Radiation Emission as a Shock Wave Diagnostic and Probe of Ultrafast Phase Transformations. Bulletin of the American Physical Society, 54(8). https://doi.org/10.1063/1.3295222

Reed, E., Armstrong, M., Kim, K. Y., Glownia, J., Howard, W., Piner, E. L., & Roberts, J. (2009). Coherent THz Electromagnetic Radiation Emission as a Diagnostic of Ultrafast Phase Transformations in Shocked CdSe. Bulletin of the American Physical Society, 54(8).

Hung, S. C., Chu, B.-H., Lo, C. F., Hicks, B., Wang, Y.-L., Chang, C. Y., … Ren, F. (2009). Detection of Cl- Ions with AlGaN/GaN High Electron Mobility Transistors. In ECS Transactions (3rd ed., Vol. 19, pp. 31–37). https://doi.org/10.1149/1.3120683

Armstrong, M. R., Reed, E. J., Kim, K.-Y., Glownia, J. H., Howard, W. M., Piner, E. L., & Roberts, J. C. (2009). Observation of Terahertz Radiation Coherently Generated by Acoustic Waves. Nature Physics, 285–288. https://doi.org/10.1038/NPHYS1219

Reed, E. J., Armstrong, M. R., Kim, K. Y., Glownia, J. M., Howard, W. M., Piner, E. L., & Roberts, J. C. (2009). A New Mechanism for Observation of THz Acoustic Waves:  Coherent THz Radiation Emission. Proceedings SPIE, 7214. https://doi.org/10.1117/12.809326

Chung, J. W., Piner, E. L., & Palacios, T. (2008). N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology. IEEE Electron Device Lett., 30(2), 113–116. https://doi.org/10.1109/LED.2008.2010415

Chung, J. W., Piner, E. L., Roberts, J. C., & Palacios, T. (2008). New Technologies for Improving the High Frequency Performance of AlGaN/GaN High Electron Mobility Transistors. https://doi.org/10.1109/ENICS.2008.36

Chung, J. W., Roberts, J. C., Piner, E. L., & Palacios, T. (2008). Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs. IEEE Electron Device Lett., 29(11), 1196–1198. https://doi.org/10.1109/LED.2008.2005257

Li, T., Redwing, J. M., Mastro, M., Piner, E. L., & Dadgar, A. (2008, September). Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates. Warrendale, PA, USA: Materials Research Society.

Hung, S. C., Wang, Y. L., Hicks, B., Pearton, S. J., Ren, F., Johnson, J. W., … Chia, G. C. (2008). Integration of Selective Area Anodized AgCl Thin Film with AlGaN/GaN HEMTs for Chloride Ion Detection. Electrochem. and Solid-State Lett., 11(9), H241–H244. https://doi.org/10.1149/1.2938726

Chang, C. Y., Kang, B. S., Wang, H. T., Ren, F., Wang, Y. L., Pearton, S. J., … Linthicum, K. J. (2008). CO2 Detection Using Polyethylenimine/Starch Functionalized AlGaN/GaN High Electron Mobility Transistors. Appl. Phys. Lett., 92(23). https://doi.org/10.1063/1.2937126

Chung, J. W., Piner, E. L., & Palacios, T. (2008). N-face GaN/AlGaN Transistors Through Substrate Removal. https://doi.org/10.1109/DRC.2008.4800801

Chen, K. H., Kang, B. S., Wang, H. T., Lele, T. P., Ren, F., Wang, Y., … Linthicum, K. J. (2008). c-erbB-2 Sensing Using AlGaN/GaN HEMTs for Breast Cancer Detection. Appl. Phys. Lett., 92(19). https://doi.org/10.1063/1.2926656

Elhamri, S., Mitchel, W. C., Berney, R., Ahoujja, M., Roberts, J. C., Rajagopal, P., … Linthicum, K. J. (2008). Impact of AlN Interlayer on the Transport Properties of AlGaN/GaN Heterostructures Grown on Silicon. Phys. Stat. Sol. (C), 5, 1962–1964. https://doi.org/10.1002/pssc.200778544

Roberts, J. C., Cook, J. W., Rajagopal, P., Piner, E. L., & Linthicum, K. J. (2008). AlGaN Transition Layers on Si(111) Substrates - Observations of Microstructure and Impact on Material Quality. Mater. Res. Soc. Symp. Proc., 1068, 147–152. https://doi.org/10.1557/PROC-1068-C06-03

Kang, B. S., Wang, H. T., Ren, F., Gila, B. P., Abernathy, C. R., Pearton, S. J., … Linthicum, K. J. (2008). Exhaled-Breath Detection Using AlGaN/GaN High Electron Mobility Transistors Integrated with a Peltier Element. Electrochem. Solid-State Lett., 11(3), J19–J21. https://doi.org/10.1149/1.2824500

Johnson, W., Singhal, S., Hanson, A., Therrien, R., Chaudhari, A., Nagy, W., … Linthicum, K. (2008). GaN-on-Si HEMTs: From Device Technology to Product Insertion. Mater. Res. Soc. Symp. Proc., 1068, 3–12. https://doi.org/10.1557/PROC-1068-C04-01

Al-Ajmi, F. S., Kolbas, R. M., Roberts, J. C., Rajagopal, P., Cook, J. W., Piner, E. L., & Linthicum, K. J. (2008). Stimulated Emission and Lasing from an Al0.13Ga0.87N/GaN Double Heterostructure Grown on Silicon Substrate. Appl. Phys. Lett., 92(2). https://doi.org/10.1063/1.2819614

Kang, B. S., Wang, H. T., Ren, F., Pearton, S. J., Morey, T. E., Dennis, D. M., … Linthicum, K. J. (2007). Enzymatic Glucose Detection Using ZnO Nanorods on the Gate Region of AlGaN/GaN High Electron Mobility Transistors. Appl. Phys. Lett., 91(25). https://doi.org/10.1063/1.2825574

Wang, H. T., Kang, B. S., Ren, F., Pearton, S. J., Johnson, J. W., Rajagopal, P., … Linthicum, K. J. (2007). Electrical Detection of Kidney Injury Molecule-1 With AlGaN/GaN High Electron Mobility Transistors. Appl. Phys. Lett., 91(22). https://doi.org/10.1063/1.2815931

Kang, B. S., Wang, H. T., Lele, T. P., Tseng, Y., Ren, F., Pearton, S. J., … Linthicum, K. J. (2007). Prostate Specific Antigen Detection Using AlGaN/GaN High Electron Mobility Transistors. Appl. Phys. Lett., 91(11). https://doi.org/10.1063/1.2772192

Park, C., Edwards, A., Rajagopal, P., Johnson, J. W., Singhal, S., Hanson, A., … Kizilyalli, I. C. (2007). High-Power and High-Voltage AlGaN/GaN HEMTs-on-Si. https://doi.org/10.1109/CSICS07.2007.11

Wang, H. T., Kang, B. S., Chancellor, T. F., Lele, T. P., Tseng, Y., Ren, F., … Linthicum, K. J. (2007). Fast Electrical Detection of Hg(II) Ions With AlGaN/GaN High Electron Mobility Transistors. Appl. Phys. Lett., 91(4). https://doi.org/10.1063/1.2764554

Kang, B. S., Wang, H. T., Ren, F., Gila, B. P., Abernathy, C. R., Pearton, S. J., … Linthicum, K. J. (2007). pH Sensor Using AlGaN/GaN High Electron Mobility Transistors with Sc2O3 in the Gate Region. Appl. Phys. Lett., 91(1). https://doi.org/10.1063/1.2754637

Zarate-de Landa, A., Zuniga-Juarez, J. E., Reynoso-Hernandez, J. A., Maya-Sanchez, M. C., Piner, E. L., & Linthicum, K. J. (2007). A New and Better Method for Extracting the Parasitic Elements of On-Wafer GaN Transistors. In IEEE/MTT-S International Microwave Symposium Digest (pp. 791–794). https://doi.org/10.1109/MWSYM.2007.380077

Piner, E. L. (2007). Progress in GaN Electronic Devices and Timeline For the Completion of the Overriding Vision of GaN Electronics: A USA Perspective.

Al-Ajmi, F. S., Kolbas, R. M., Roberts, J. C., Rajagopal, P., Cook, J. W., Piner, E. L., & Linthicum, K. J. (2007). Room Temperature Laser Action from Multiple Bands in Photexcited GaN Grown on a Silicon Substrate. Appl. Phys. Lett., 90(15). https://doi.org/10.1063/1.2722201

Singhal, S., Hanson, A. W., Chaudhari, A., Rajagopal, P., Li, T., Johnson, J. W., … Kizilyalli, I. C. (2007). Qualification and Reliability of a GaN Process Platform.

Kang, B. S., Pearton, S. J., Chen, J. J., Ren, F., Johnson, J. W., Therrien, R. J., … Linthicum, K. J. (2006). Electrical Detection of Deoxyribonucleic Acid Hybridization with AlGaN/GaN High Electron Mobility Transistors. Appl. Phys. Lett., 89(12). https://doi.org/10.1063/1.2354491

Park, J. H., Steckl, A. J., Rajagopal, P., Roberts, J. C., & Piner, E. L. (2006). Growth Temperature Dependence of Optical Modal Gain and Loss in GaN:Eu Active Medium on Si. Opt. Express, 14(12), 5307–5312. https://doi.org/10.1364/OE.14.005307

Piner, E. L., Singhal, S., Rajagopal, P., Therrien, R., Roberts, J. C., Li, T., … Linthicum, K. J. (2006). Device Degradation Phenomena in GaN HFET Technology: Status, Mechanisms, and Opportunities (pp. 1–4). https://doi.org/10.1109/IEDM.2006.346798

Singhal, S., Li, T., Chaudhari, A., Hanson, A. W., Therrien, R., Johnson, J. W., … Linthicum, K. J. (2006). Reliability of Large Periphery GaN-on-Silicon HFETs. Microelectronic and Reliability, 46(8), 1247–1253. https://doi.org/10.1016/j.microrel.2006.02.009

Mohammed, F. M., Wang, L., Adesida, I., & Piner, E. L. (2006). The Role of Barrier Layer on Ohmic Performance of Ti/Al-Based contact Metallizations on AlGaN/GaN Heterostructures. J. Appl. Phys., 100(2). https://doi.org/10.1063/1.2218766

Muth, J. F., Zhang, X., Cai, A., Fothergill, D., Roberts, J. C., Rajagopal, P., … Linthicum, K. J. (2005). Gallium Nitride Surface Quantum Wells. Appl. Phys. Lett., 87(19). https://doi.org/10.1063/1.2123396

Fanning, D. M., Witkowski, L. C., Lee, C., Dumka, D. C., Tseng, H. Q., Saunier, P., … Johnson, J. W. (2005). 25W X-band GaN on Si MMIC. In International Conf. on Compound Semi. Manufacturing Technologies Digest.

Kang, B. S., Kim, J., Jang, S., Ren, F., Johnson, J. W., Therrien, R. J., … Pearton, S. J. (2005). Capacitance Pressure Sensor Based on GaN High-Electron-Mobility-Transistor-on-Silicon Membrane. Appl. Phys. Lett., 86(25). https://doi.org/10.1063/1.1952568

Nagy, W., Singhal, S., Borges, R., Johnson, J. W., Brown, J. D., Therrien, R., … Linthicum, K. J. (2005). 150 W GaN-on-Si RF Power Transistor. In 2005 IEEE MTT-S Int. Microwave Symp. Digest (Vol. 1, pp. 483–486). IEEE.

Roberts, J. C., Rajagopal, P., Cook, J. W., Therrien, R. J., Piner, E. L., Linthicum, K. J., … Kub, F. J. (2005). AlGaN/GaN Heterostructure Field Effect Transistors Fabricated on 100mm Si/poly SiC Composite Substrates. In Electrochemical Society Proceedings (Vol. 2005–6, pp. 151–156). Electrochemical Society.

Elhamri, S., Mitchell, W. C., Mitchell, W. D., Berney, R., Ahoujja, M., Roberts, J. C., … Linthicum, K. L. (2005). A Magnetotransport Study of AlGaN/GaN Heterostructures on Silicon. J. Electron. Materials, 34(4), 444–449. https://doi.org/10.1007/s11664-005-0125-2

Kang, B. S., Kim, S., Ren, F., Johnson, J. W., Therrien, R. J., Rajagopal, P., … Pearton, S. J. (2004). Pressure-Induced Changes in the Conductivity of AlGaN/GaN High-Electron Mobility Transistor Membranes. Appl. Phys. Lett., 85(14), 2962–2964. https://doi.org/10.1063/1.1800282

Johnson, J. W., Gao, J., Lucht, K., Williamson, J., Strautin, C., Riddle, J., … Linthicum, K. J. (2004). Material, Process, and Device Development of GaN-Based HFETs on Silicon Substrates. In Electrochemical Society Proceedings (Vol. 6, pp. 405–419).

Johnson, J. W., Piner, E. L., Vescan, A., Therrien, R., Rajagopal, P., Roberts, J. C., … Linthicum, K. J. (2004). 12 W/mm AlGaN-GaN HFETs on Silicon Substrates. IEEE Electron Device Lett., 25(7), 459–461. https://doi.org/10.1109/LED.2004.831190

Elhamri, S., Berney, S., Mitchell, W. C., Mitchell, W. D., Roberts, J. C., Rajagopal, P., … Linthicum, K. J. (2004). An Electrical Characterization of a Two-Dimensional Electron Gas In GaN/AlGaN on Silicon Substrates. J. Appl. Phys., 95(12), 7982–7989. https://doi.org/10.1063/1.1736327

Hanson, A. W., Borges, R., Brown, J. D., Cook Jr., J. W., Gehrke, T., Johnson, J. W., … Vescan, A. (2004). Development of a GaN Transistor Process for Linear Power Applications.

Rajagopal, P., Roberts, J. C., Cook, Jr., J. W., Brown, J. D., Piner, E. L., & Linthicum, K. J. (2004). MOCVD AlGaN/GaN HFETs on Si: Challenges and Issues. In Mater. Res. Soc. Symp. Proc. (pp. 61–66).

Zhao, G., Sutton, W., Pavlidis, D., Piner, E. L., Schwank, J., & Hubbard, S. (2003). A Novel Pt-AlGaN/GaN Heterostructure Schottky Diode Gas Sensor on Si. IEICE Trans. on Electronics, E86-C(10), 2027–2031.

Lu, W., Kumar, V., Piner, E. L., & Adesida, I. (2003). DC, RF, and Microwave Noise Performance of AlGaN-GaN Field Effect Transistors: Dependence of Aluminum Concentration. IEEE Trans. on Electron Devices, 50(4), 1069–1074. https://doi.org/10.1109/TED.2003.812083

Rajagopal, P., Gehrke, T., Roberts, J. C., Brown, J. D., Weeks, T. W., Piner, E. l, & Linthicum, K. J. (2003). Large-Area, Device Quality GaN on Si Using a Novel Transition Layer Scheme. Mater. Res. Soc. Symp. Proc., 743, 3–8.

Lu, W., Kumar, V., Schwindt, R., Piner, E. L., & Adesida, I. (2002). DC, RF, and Microwave Noise Performance of AlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates. IEEE Trans. Microwave Theory Tech., 50(11), 2499–2504.

Brown, J. D., Borges, R., Piner, E. L., Vescan, A., Singhal, S., & Therrien, R. (2002). AlGaN/GaN HFETs Fabricated on 100-mm GaN on Silicon (111) Substrates. Solid-State Electron., 46(10), 1535–1539. https://doi.org/10.1016/S0038-1101(02)00101-6

Lu, W., Kumar, V., Schwindt, R., Piner, E. L., & Adesida, I. (2002). A Comparative Study of Surface Passivation on AlGaN/GaN HEMTs. Solid-State Electron., 46(9), 1441–1444. https://doi.org/10.1016/S0038-1101(02)00089-8

Lee, C., Lu, W., Piner, E. L., & Adesida, I. (2002). DC and Microwave Performance of Recessed-Gate GaN MESFETs Using ICP-RIE. Solid-State Electron., 46(5), 743–746. https://doi.org/10.1016/S0038-1101(01)00292-1

Kumar, V., Lu, W., Khan, F. A., Schwindt, R., Piner, E. L., & Adesida, I. (2001). Recessed 0.25 um Gate AlGaN/GaN HEMTs on SiC with High Gate-Drain Breakdown Voltage Using ICP-RIE. Electronics Letters, 37(24), 1483–1485. https://doi.org/10.1049/el:20010999

Aleskeev, E., Pavlidis, D., Sutton, W. E., Piner, E. L., & Redwing, J. (2001). GaN-Based Gunn Diodes: Their Frequency and Power Performance and Experimental Considerations. IEICE Trans. on Electronics, E84-C(10), 1462–1469.

Maher, H., Bolognesi, C. R., & Piner, E. L. (2001). Temperature Characterization of NDR in AlGaN/GaN HFETs. In Proceeding of the 31st European Solid-State Device Research Conference (pp. 327–330). https://doi.org/10.1109/ESSDERC.2001.195267

Dang, X. Z., Yu, E. T., Piner, E. L., & McDermott, B. T. (2001). Influence of Surface Processing and Passivation on Carrier Concentrations and Transport Properties in AlGaN/GaN Heterostructures. J. Appl. Phys., 90(3), 1357. https://doi.org/10.1063/1.1383014

Readinger, E. D., Luther, B. P., Mohney, S. E., & Piner, E. L. (2001). Environmental Aging of Schottky Contacts to n-AlGaN. J. Appl. Phys., 89(12), 7983. https://doi.org/10.1063/1.1370367

Piner, E. L. (2001). GaN on Silicon For High Power and High Frequency Electronics.

Liliental-Weber, Z., Benamara, M., Washburn, J., Domagala, J. Z., Bak-Misiuk, J., Piner, E. L., … Bedair, S. M. (2001). Relaxation of InGaN Thin Layers Observed by X-ray and Transmission Electron Microscopy Studies. J. of Electron. Materials, 30(4), 439–444. https://doi.org/10.1007/s11664-001-0056-5

Wang, S., Powell, A., Redwing, J. M., Piner, E. L., & Saxler, A. W. (2000). Generation and Properties of Semi-Insulating SiC Substrates. Materials Sci. Forum, 338–342, 17–20.

Robins, L. H., Armstrong, J. T., Marinenko, R. B., Vaudin, M. D., Bouldin, C. E., Woicik, J. C., … Pearton, S. J. (2000). Optical and Structural Studies of Compositional Inhomogeneity in Strain-Relaxed Indium Gallium Nitride Films (pp. 507–512). IEEE. https://doi.org/10.1109/ISCS.2000.947207

Vescan, A., Dietrich, R., Eieszt, A., Schurt, A., Leier, H., Piner, E. L., & Redwing, J. M. (2000). AlGaN/GaN MODFETs on Semi-Insulating SiC with 3 W/mm at 20GHz. Electronics Letters, 36(14), 1234–1236. https://doi.org/10.1049/el:20000898

Piner, E. L., Keogh, D. M., Flynn, J. S., & Redwing, J. M. (2000). AlGaN/GaN High Electron Mobility Transistor Structure Design and Effects on Electrical Properties. MRS Internet J. Nitride Semicond. Res., 5S1(W4.4). https://doi.org/10.1557/S109257830000449X

Ping, A. T., Piner, E. L., Redwing, J., Asif Khan, M., & Adesida, I. (2000). Microwave Noise Performance of AlGaN/GaN HEMTs. Electronics Letters, 36(2), 175–176.

Ping, A. T., Selvanathan, D., Youtsey, C., Piner, E. L., Redwing, J., & Adesida, I. (1999). Gate Recessing of GaN MISFETs Using Photoelectrochemical Wet Etching. Electronics Letters, 35(24), 2140–2141. https://doi.org/10.1049/el:19991341

Behbehani, M. K., Piner, E. L., Liu, S. X., El-Masry, N. A., & Bedair, S. M. (1999). Phase Separation and Ordering Coexisting in InxGa1-xN Grown by Metal Organic Chemical Vapor Deposition. Appl. Phys. Lett., 75(15). https://doi.org/10.1063/1.124964

Joshkin, V. A., Parker, C. A., Bedair, S. M., Muth, J. F., Shmagin, I. K., Kolbas, R. M., … Molnar, R. J. (1999). Effect of Growth Temperature on Point Defect Density of Unintentionally Doped GaN Grown by Metalorganic Chemical Vapor Deposition and Hydride Vapor Phase Epitaxy. J. Appl. Phys., 86(1). https://doi.org/10.1063/1.370727

Robins, L., Paul, A. J., Parker, C. A., Roberts, J. C., Bedair, S. M., Piner, E. L., & El-Masry, N. A. (1999). Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films. Mater. Res. Soc. Symp. Proc., 537, G3.22. https://doi.org/10.1557/PROC-537-G3.22

Piner, E. L., El-Masry, N. A., Liu, S. X., & Bedair, S. M. (1998). Detection and Analysis of Phase Separation in Metalorganic Chemical Vapor Deposition InGaN. Mater. Res. Soc. Symp. Proc., 482, 125. https://doi.org/10.1557/PROC-482-125

El-Masry, N. A., Piner, E. L., Liu, S. X., & Bedair, S. M. (1998). Phase Separation in InGaN Grown by Metalorganic Chemical Vapor Deposition. Appl. Phys. Lett., 72(1), 40. https://doi.org/10.1063/1.120639

Piner, E. L., Behbehani, M. K., El-Masry, N. A., Roberts, J. C., McIntosh, F. G., & Bedair, S. M. (1997). Impurity Dependence on Hydrogen and Ammonia Flow Rates in InGaN Bulk Films. Appl. Phys. Lett., 71(14), 2023. https://doi.org/10.1063/1.119775

Joshkin, V. A., Roberts, J. C., McIntosh, F. G., Bedair, S. M., Piner, E. L., & Behbehani, M. K. (1997). Optical Memory Effect in GaN Epitaxial Films. Appl. Phys. Lett., 71(2), 234. https://doi.org/10.1063/1.120414

Zeng, K. C., Smith, M., Lin, J. Y., Jiang, H. X., Roberts, J. C., Piner, E. L., … Zavada, J. (1997). Optical Transitions in InGaN/AlGaN Single Quantum Wells. J. Vac. Sci. Technol. B, 15(4), 1139–1143. https://doi.org/10.1116/1.589428

Bedair, S. M., McIntosh, F. G., Roberts, J. C., Piner, E. L., Boutros, K. S., & El-Masry, N. A. (1997). Growth and Characterization of In-based Nitride Compounds. J. Crystal Growth, 178(32). https://doi.org/10.1016/S0022-0248(97)00069-9

Piner, E. L., McIntosh, F. G., Roberts, J. C., Boutros, K. S., Aumer, M. E., Joshkin, V. A., … Liu, S. X. (1997). A Model for Indium Incorporation in the Growth of InGaN Films. Mater. Res. Soc. Symp. Proc., 449, 85. https://doi.org/10.1557/PROC-449-85

McIntosh, F. G., Piner, E. L., Roberts, J. C., Behbehani, M. K., Aumer, M. E., El-Masry, N. A., & Bedair, S. M. (1997). Epitaxial Deposition of GaInN and InN Using the Rotating Susceptor ALE System. Appl. Surf. Sci., 112, 98–101. https://doi.org/10.1016/S0169-4332(96)00992-0

Joshkin, V. A., Roberts, J. C., Piner, E. L., Behbehani, M. K., McIntosh, F. G., Wang, L., … Bedair, S. M. (1997). Growth and Characterization of In-Based Nitride Compounds and Their Double Heterostructures. Mater. Res. Soc. Symp. Proc., 468, 13. https://doi.org/10.1557/PROC-468-13

Roberts, J. C., McIntosh, F. G., Aumer, M. E., Piner, E. L., Joshkin, V. A., Liu, S., … Bedair, S. M. (1997). Stacked InGaN/AlGaN Double Heterostructures. Mater. Res. Soc. Symp. Proc., 449, 1161. https://doi.org/10.1557/PROC-449-1161

Piner, E. L., Behbehani, M. K., El-Masry, N. A., McIntosh, F. G., Roberts, J. C., & Bedair, S. M. (1997). Effect of Hydrogen on the Indium Incorporation in InGaN Epitaxial Films. Appl. Phys. Lett., 70(4), 461. https://doi.org/10.1063/1.118181

Roberts, J. C., McIntosh, F. G., Aumer, M., Joshkin, V., Boutros, K. S., Piner, E. L., … Bedair, S. M. (1996). Growth and Characterization of AlInGaN/InGaN Heterostructures. Mater. Res. Soc. Symp. Proc., 423, 341. https://doi.org/10.1557/PROC-423-341

Piner, E. L., McIntosh, F. G., Roberts, J. C., Aumer, M. E., Joshkin, V. A., Bedair, S. M., & El-Masry, N. A. (1996). Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire. MRS Internet J. Nitride Semicond. Res., 1, e43. https://doi.org/10.1557/S1092578300002155

Weeks, Jr., T. W., Bremser, M. D., Ailey, K. S., Carlson, E. P., Perry, W. G., Piner, E. L., … Davis, R. F. (1996). Undoped and Doped GaN Thin Films Deposited on High-Temperature Monocrystalline AlN Buffer Layers on Vicinal and On-axis (6H)-SiC(0001) Substrates via Organometallic Vapor Phase Epitaxy. J. Mater. Res., 11(4), 1081. https://doi.org/10.1557/JMR.1996.0126

McIntosh, F. G., Piner, E. L., Boutros, K. S., Roberts, J. C., He, Y., Moussa, M., … Bedair, S. M. (1996). AlGaInN Quaternary Alloy by MOCVD. Mater. Res. Soc. Symp. Proc., 395, 219. https://doi.org/10.1557/PROC-395-219

Roberts, J. C., McIntosh, F. G., Boutros, K. S., Bedair, S. M., Moussa, M., Piner, E. L., … El-Masry, N. A. (1996). Growth of High Quality InGaN Films by Metalorganic Chemical Vapor Deposition. Mater. Res. Soc. Symp. Proc., 395, 273. https://doi.org/10.1557/PROC-395-273

Boutros, K. S., Roberts, J. C., McIntosh, F. G., Piner, E. L., El-Masry, N. A., & Bedair, S. M. (1996). Low Temperature Growth of High Quality InxGa1-xN by Atomic Layer Epitaxy. Mater. Res. Soc. Symp. Proc., 395, 213. https://doi.org/10.1557/PROC-395-213

Piner, E. L., He, Y. W., Boutros, K. S., McIntosh, F. G., Roberts, J. C., Bedair, S. M., & El-Masry, N. A. (1996). New Buffer Layers for GaN on Sapphire by Atomic Layer and Molecular Stream Epitaxy. Mater. Res. Soc. Symp. Proc., 395, 307. https://doi.org/10.1557/PROC-395-307

McIntosh, F. G., Boutros, K. S., Roberts, J. C., Bedair, S. M., Piner, E. L., & El-Masry, N. A. (1996). Growth and Characterization of AlInGaN Quaternary Alloys. Appl. Phys. Lett., 68(1), 40. https://doi.org/10.1063/1.116749

Boutros, K. S., McIntosh, F. G., Roberts, J. C., Bedair, S. M., Piner, E. L., & El-Masry, N. A. (1995). High Quality InGaN Films by Atomic Layer Epitaxy. Appl. Phys. Lett., 67(13), 1856. https://doi.org/10.1063/1.114355