Faculty Profiles

Patents

• “Semiconductor dielectric interface and gate stack.” Chien-Hsun Wang, Shih Wei Wang, Ravindranath Droopad, Gerben Doombos, Georgios Vellianitis, Matthias Passlack. Regular, #9,390,913.
  Date awarded: 07/12/2016
• “Insulated gate field effect transistors.” Jonathan Abrokwah, Ravindranath Droopad, Matthias Passlack. Regular, #8,847,280.
  Date awarded: 09/30/2014
• “Method for forming an insulated gate field effect device.” Jonathan Abrokwah, Ravindranath Droopad, Matthias Passlack. Regular, #8,105,925.
  Date awarded: 01/31/2012
• “MOSFET device featuring a superlattice barrier layer and method.” Ravindranath Droopad, Matthias Passlack, Karthik Rajagopalan. Regular, #7,799,647.
  Date awarded: 09/21/2010
• “MOSFET structure and method of manufacture.” Ravindranath Droopad, Matthias Passlack. Regular, #7,692,224.
  Date awarded: 04/06/2010
• “III-V compound semiconductor device with a surface layer in access regions having charge of polarity opposite to channel charge and method of making the same.” Matthias Passlack, Ravindranath Droopad, Karthik Rajagopalan. Regular, #7,682,912.
  Date awarded: 03/23/2010
• “Method of forming an oxide layer on a compound semiconductor structure.” Ravindranath Droopad, Matthias Passlack. Regular, #7,442,654.
  Date awarded: 10/28/2008
• “Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process.” Yong Liang, Ravindranath Droopad, Xiaoming Hu, Jun Wang, Yi Wei, Zhiyi Yu. Regular, #7,169,619.
  Date awarded: 01/30/2007
• “High K dielectric film.” Ravindranath Droopad. Regular, #7,105,886.
  Date awarded: 09/12/2006
• “Heterojunction tunneling diodes and process for fabricating same.” Nada El-Zein, jamal Ramdani, Kurt Eisenbeiser, Ravindranath Droopad. Regular, #7,105,866.
  Date awarded: 09/12/2006
• “Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same.” Jamal Ramdani, Ravindranath Droopad, Lyndee Hilt, Kurt Eisenbeiser. Regular, #7,067,856.
  Date awarded: 06/27/2006
• “Semiconductor structure exhibiting reduced leakage current and method of fabricating same.” Zhiyi Yu, Ravindranath Droopad. Regular, #7,045,815.
  Date awarded: 05/16/2006
• “Semiconductor device and method.” Kurt Eisenbeiser, Jun Wang, Ravindranath Droopad. Regular, #7,005,717.
  Date awarded: 02/28/2006
• “Semiconductor device and method Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate.” Hao Li, Ravindranath Droopad, Daniel Marshall, Yi Wei, Xiao Hu, Yong Liang. Regular, #6,916,717.
  Date awarded: 07/12/2005
• “Compound semiconductor structure including an epitaxial perovskite layer and method for fabricating semiconductor structures and devices.” Yong Liang, Ravindranath Droopad. Regular, #6,890,816.
  Date awarded: 05/10/2005
• “Ferromagnetic semiconductor structure and method for forming the same.” Ravindranath Droopad, Yong Liang, Hao Li, Zhiyi Yu. Regular, #6,885,065.
  Date awarded: 04/26/2005
• “Method of removing silicon oxide from a surface of a substrate.” Xiaoming Hu, James Craigo, Ravindranath Droopad, John Edwards, Yong Liang, Yi Wei, Zhiyi Yu. Regular, #6,806,202.
  Date awarded: 10/19/2004
• “Microelectronic piezoelectric structure and method of forming the same.” Ramoothy Ramesh, Wang Yu, Jeffrey Finder, Kurt Eisenbeiser, Zhiyi Yu, Ravindranath Droopad. Regular, #6,750,067.
  Date awarded: 06/15/2004
• “Method for fabricating a semiconductor structure including a metal oxide interface with silicon.” Jamal Ramdani, Ravindranath Droopad, Zhiyi Yu. Regular, #6,709,989.
  Date awarded: 03/23/2004
• “Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same.” Ravindranath Droopad. Regular, #6,693,298.
  Date awarded: 03/17/2004
• “Method of removing an amorphous oxide from a monocrystalline surface.” Ravindranath Droopad. Regular, #6,693,033.
  Date awarded: 02/17/2004
• “Growth of compound semiconductor structures on patterned oxide films and process for fabricating same.” Ravindranath Droopad. Regular, #6,673,646.
  Date awarded: 01/06/2004
• “Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method.” Ravindranath Droopad. Regular, #6,667,196.
  Date awarded: 12/23/2003
• “Semiconductor structure for use with high-frequency signals.” Ravindranath Droopad. Regular, #6,590,236.
  Date awarded: 07/08/2003
• “Acoustic wave device and process for forming the same.” Ravindranath Droopad. Regular, #6,555,946.
  Date awarded: 04/29/2003
• “Semiconductor structure.” Ravindranath Droopad. Regular, #6,501,121.
  Date awarded: 12/31/2002
• “Electro-optic structure and process for fabricating same.” Ravindranath Droopad. Regular, #6,493,497.
  Date awarded: 12/10/2002
• “Microelectronic piezoelectric structure and method of forming the same.” Ravindranath Droopad. Regular, #6,482,538.
  Date awarded: 11/19/2002
• “Semiconductor structure having a crystalline alkaline earth metal silicon nitride/oxide interface with silicon.” Ravindranath Droopad. Regular, #6,479,173.
  Date awarded: 11/12/2002
• “Using silicate layers for composite semiconductor.” Ravindranath Droopad. Regular, #6,472,276.
  Date awarded: 10/29/2002
• “Microelectronic piezoelectric structure and method of forming the same.” Ravindranath Droopad. Regular, #6,432,546.
  Date awarded: 08/13/2002
• “Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same.” Ravindranath Droopad. Regular, #6,392,257.
  Date awarded: 05/21/2002
• “Method of fabricating a semiconductor structure including a metal oxide interface.” Ravindranath Droopad. Regular, #6,316,730.
  Date awarded: 11/20/2001
• “Method for fabricating a semiconductor structure having a stable crystalline interface with silicon.” Ravindranath Droopad. Regular, #6,291.319.
  Date awarded: 09/18/2001
• “Method for fabricating a semiconductor structure with reduced leakage current density.” Ravindranath Droopad. Regular, #6,270,568.
  Date awarded: 08/07/2001
• “Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon.” Ravindranath Droopad. Regular, #6,241,821.
  Date awarded: 06/05/2001
• “Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon.” Ravindranath Droopad. Regular, #6,224,669.
  Date awarded: 05/01/2001
• “Method of forming a gate quality oxide-compound semiconductor structure.” Ravindranath Droopad. Regular, #6,159,834.
  Date awarded: 12/12/2000
• “Method of preparing crystalline alkaline earth metal oxides on a Si substrate.” Ravindranath Droopad. Regular, #6,113,690.
  Date awarded: 09/05/2000
• “Method of passivating the surface of a Si substrate.” Ravindranath Droopad. Regular, #6,110,840.
  Date awarded: 08/29/2000
• “III-V epitaxial wafer production.” Ravindranath Droopad. Regular, #6,030,453.
  Date awarded: 02/29/2000
• “Alkaline-earth metal silicides on silicon.” Ravindranath Droopad. Regular, #6,022,410.
  Date awarded: 02/08/2000
• “Method of fabricating submicron FETs with low temperature group III-V material.” Ravindranath Droopad. Regular, #5,937,285.
  Date awarded: 08/10/1999
• “Method of forming a silicon nitride layer.” Ravindranath Droopad. Regular, #5,907.792.
  Date awarded: 05/25/1999
• “Fabrication method for a gate quality oxide-compound semiconductor structure.” Ravindranath Droopad. Regular, #5,904,553.
  Date awarded: 05/18/1999