Faculty Profiles

Colleges and Departments

Dr. Ravi Droopad

  • Professor - Ingram School of Engineering

Education

Doctorate Degree

PhD in Semiconductor Physics

University of London, 1989

Bachelor's Degree

BSC in Electronic and Communication Engineering

University of Birmingham, 1982

Research Interests

Patents

  • “Semiconductor dielectric interface and gate stack.” Chien-Hsun Wang, Shih Wei Wang, Ravindranath Droopad, Gerben Doombos, Georgios Vellianitis, Matthias Passlack. Regular, #9,390,913.
    Date awarded: 07/12/2016
  • “Insulated gate field effect transistors.” Jonathan Abrokwah, Ravindranath Droopad, Matthias Passlack. Regular, #8,847,280.
    Date awarded: 09/30/2014
  • “Method for forming an insulated gate field effect device.” Jonathan Abrokwah, Ravindranath Droopad, Matthias Passlack. Regular, #8,105,925.
    Date awarded: 01/31/2012
  • “MOSFET device featuring a superlattice barrier layer and method.” Ravindranath Droopad, Matthias Passlack, Karthik Rajagopalan. Regular, #7,799,647.
    Date awarded: 09/21/2010
  • “MOSFET structure and method of manufacture.” Ravindranath Droopad, Matthias Passlack. Regular, #7,692,224.
    Date awarded: 04/06/2010
  • “III-V compound semiconductor device with a surface layer in access regions having charge of polarity opposite to channel charge and method of making the same.” Matthias Passlack, Ravindranath Droopad, Karthik Rajagopalan. Regular, #7,682,912.
    Date awarded: 03/23/2010
View all intellectual property
  • Piner, Edwin L (Principal), Haque, Ariful (Co-Principal), Valles Molina, Damian (Co-Principal), Miyahara, Yoichi (Co-Principal), Droopad, Ravindranath (Supporting), Holtz, Mark W (Supporting), Scolfaro, Luisa M (Supporting), Miller, David R von (Supporting), Ahmed, Mohammad Iqbal (Supporting). Center for Ultrawide Bandgap Semiconductor Device Materials, National Science Foundation, Federal, $7500000. (Submitted: December 6, 2024, Funded: September 1, 2025 - August 31, 2030). Grant.
  • Haque, Ariful (Principal), Droopad, Ravindranath (Supporting), Holtz, Mark W (Supporting), Piner, Edwin L (Supporting), Geerts, Wilhelmus J (Supporting), Chen, Yihong (Supporting), Hudnall, Todd W (Supporting), Wistey, Mark A (Supporting), Miyahara, Yoichi (Supporting), Smith, Casey Eben (Supporting), Mahato, Dip Narayan (Supporting), Rastogi, Shiva Kumar (Supporting), Kim, Namwon (Supporting). Acquisition of a state-of-the-art Photoluminescence Spectrometer for Materials Characterization in Research and Education, Department of Defense, Federal, $434519. (Submitted: September 2023, Funded: 2024 - 2025). Grant.
  • Miyahara, Yoichi (Principal), Satchell, Nathan David (Co-Principal), Holtz, Mark W (Co-Principal), Kim, Namwon (Co-Principal), Martin, Benjamin (Co-Principal), Chen, Yihong (Supporting), Theodoropoulou, Nikoleta (Supporting), Geerts, Wilhelmus J (Supporting), Piner, Edwin L (Supporting), Haque, Ariful (Supporting), Droopad, Ravindranath (Supporting), Mahato, Dip Narayan (Supporting), Smith, Casey Eben (Supporting). MRI: Track 1 Acquisition of state-of-the-art lithography system for micro/nanometer scale device fabrication in research and education, National Science Foundation, Federal, $569780. (Submitted: November 14, 2023, Funded: September 1, 2024 - August 31, 2027). Grant.
  • Geerts, Wilhelmus J (Principal), Percent Contribution: %40, Tate, Jitendra S (Co-Principal), Percent Contribution: %25, Chen, Yihong (Co-Principal), Percent Contribution: %25, Droopad, Ravindranath (Other), Percent Contribution: %5, Rhodes, Christopher Peter (Other), Percent Contribution: %5. MRI: Development of triaxial Vibrating Sample Magnetometry for Research and Education, NSF, Federal, $119461. (Submitted: January 19, 2022, Funded: September 2022 - August 30, 2025). Grant.
  • Holtz, Mark W (Principal), Percent Contribution: %15, Chen, Yihong (Supporting), Percent Contribution: %11, Geerts, Wilhelmus J (Supporting), Percent Contribution: %15, Droopad, Ravindranath (Supporting), Percent Contribution: %8, Li, Jian (Co-Principal), Percent Contribution: %5, Myers, Thomas H (Supporting), Percent Contribution: %8, Piner, Edwin L (Supporting), Percent Contribution: %8, Theodoropoulou, Nikoleta (Supporting), Percent Contribution: %15, Zakhidov, Alexander (Supporting), Percent Contribution: %15. System of Integrated Characterization of Electronic Devices and Materials, U.S. AFOSR, Federal, $332086. (Funded: August 15, 2017 - August 14, 2018). Grant.
View all grants
  • Sultana, M., Samuels, B. C., Hartley, J., Lamsal, P., Azmain, M. A., Sarkar, P. K., … Haque, A. (2026). Epitaxial growth and characterization of hexagonal epsilon-(InxGa1-x)2O3 (x=0.05 and 0.15) on AlN. Journal of Physics D: Applied Physics, 59. https://doi.org/10.1088/1361-6463/ae9d8e
  • Sultana, M., Samuels, B. C., Sarkar, P. K., Miyahara, Y., Collingwood, A., Piner, E. L., … Haque, A. (2026). Investigation of Band Discontinuities at the Interface of ϵ-(In0.15Ga0.85)2O3 (0002) and AlN (0002) Heterojunction. IEEE Transactions on Materials for Electron Devices. https://doi.org/10.1109/TMAT.2026.3726842
  • Sarkar, P. K., Taqy, S. A. A., Sultana, M., Lamsal, P., Droopad, R., & Haque, A. (2026). Direct fabrication of diamond films on β-Ga2O3 using Q-carbon. Materials Science in Semiconductor Processing, 212, 110764. https://doi.org/10.1016/j.mssp.2026.110764
  • Karmakar, S., Azmain, M. A., Alaga, A. A., Manikanthababu, N., Emu, I. H., Droopad, R., … Haque, A. (2025). Charge carrier trapping and current conduction mechanisms in ZnGa2O4/n-SrTiO3 MOS capacitors. Journal of Materials Science: Materials in Electronics, 36(18), 1–15. https://doi.org/10.1007/s10854-025-15163-6
  • Manikanthababu, N., Karmakar, S., Shiam, I. F., Emu, I. H., Haque, A., & Droopad, R. (2025). Growth, optimization and high-temperature performance of GeO2/Ga2O3 MOSCAPs. Materials Science in Semiconductor Processing, 193, 109518. https://doi.org/10.1016/j.mssp.2025.109518
View all scholarly/creative works
  • Award / Honor Recipient: Fellow, National Academy of Inventors. December 2025 - Present
  • Award / Honor Recipient: Fellow, Institute of Electrical and Electrical Engineers. 2016 - Present
  • Award / Honor Recipient: Alpha Chi Favorite Professor. 2016 - Present
  • Award / Honor Recipient: Senior Member, Institute of Electrical and Electrical Engineers. 2006 - Present
  • Award / Honor Recipient: Engineer of the Year Award, IEEE Phoenix Section. 2006 - Present
View all awards
  1. Graduate Advisor

    Ingram School of Engineering

  2. Reviewer / Referee

    Swiss National Science Foundation

  3. Reviewer / Referee

    Journal of Material Chemistry

  4. Reviewer / Referee

    German Research Foundation

  5. Reviewer / Referee

    Departmant of Energy

  6. Reviewer / Referee

    Israeli Pazy Foundation

  7. View all activities