Faculty Profile for Dr. Ravi Droopad

profile photo for Dr. Ravi Droopad
Dr. Ravi Droopad
Professor — Ingram School of Engineering
IGRM 2203
phone: (512) 245-1826

Biography Section

Research Interests

Materials Science, Semiconductors and Epitaxial Oxides

Selected Scholarly/Creative Work

  • Karmakar, S., Taqy, S., Droopad, R., Trivedi, R., Chakraborty, B., & Haque, A. (2023). Highly Stable Electrochemical Supercapacitor Performance of Self-Assembled Ferromagnetic Q-carbon. ACS Applied Materials & Interfaces. https://doi.org/https://doi.org/10.1021/acsami.2c20202
  • Dey, T., Reza, M. S., Arbogast, A. W., Holtz, M. W., Droopad, R., Bank,Seth R., & Wistey, M. A. (2022). Molecular beam epitaxy of highly crystalline GeSnC using CBr4 at low temperatures. Applied Physics Letters, 121(12), 122104. https://doi.org/10.1063/5.0102093
  • Kim, K., Radhakrishnan, G., Droopad, R., & Goyal, A. (2022). Single-crystal-like germanium thin films on large-area, compliant, light-weight, flexible, single-crystal-like substrates. PNAS Nexus, 1, 1–7.
  • Mia, M. D., Samuels, B. C., Anderson, J., Haque, A., & Droopad, R. (2022). Growth and characterization of (Ga1− xFex) 2O3 thin films by pulsed laser deposition for wide-bandgap and spintronics applications. MRS Communications, 12, 422–426. https://doi.org/10.1557/s43579-022-00194-5
  • Mia, D., Samuels, B., Borges, P., Scolfaro, L., Siddique, A., Saha, J., … Droopad, R. (2022). Growth and characterization of ( Ga1 − xGdx)2O3 by pulsed laser deposition for wide bandgap applications. Applied Physics A: Material Science and Processing, 128, 366. https://doi.org/10.1007/s00339-022-05476-2

Selected Awards

  • Award / Honor Recipient: Alpha Chi Favorite Professor. 2016 - Present
  • Award / Honor Recipient: Senior Member, Institute of Electrical and Electrical Engineers. 2006

Selected Grants

  • Holtz, Mark W (Principal), Chen, Yihong (Supporting), Geerts, Wilhelmus J (Supporting), Droopad, Ravindranath (Supporting), Li, Jian (Co-Principal), Myers, Thomas H (Supporting), Piner, Edwin L (Supporting), Theodoropoulou, Nikoleta (Supporting), Zakhidov, Alexander (Supporting). System of Integrated Characterization of Electronic Devices and Materials, U.S. AFOSR, Federal, $332086. (Funded: August 15, 2017 - August 14, 2018). Grant.
  • Droopad, Ravindranath (Principal). Tri-Alpha Energy, $31050. (Funded: 2016). Grant.
  • Droopad, Ravindranath (Principal). KANC: III-V Compound Semiconductor Epi Structures Development, $25000. (Funded: 2016). Grant.
  • Droopad, Ravindranath (Principal). KNU: III-V Compound Semiconductor Epi Structures Development, $25000. (Funded: 2016). Grant.
  • Droopad, Ravindranath (Principal). Tri-Alpha Energy, $31050. (Funded: 2015). Grant.

Selected Service Activities

Reviewer / Referee
Swiss National Science Foundation
2021-Present
Reviewer / Referee
Journal of Material Chemistry
2021-Present
Reviewer / Referee
German Research Foundation
2020-Present
Reviewer / Referee
Departmant of Energy
2018-Present
Reviewer / Referee
Israeli Pazy Foundation
2016-Present