Faculty Profiles

Colleges and Departments

Dr. Ravi Droopad

  • Professor - Ingram School of Engineering

Education

Doctorate Degree

PhD in Semiconductor Physics

University of London, 1989

Bachelor's Degree

BSC in Electronic and Communication Engineering

University of Birmingham, 1982

Research Interests

Patents

  • “Semiconductor dielectric interface and gate stack.” Chien-Hsun Wang, Shih Wei Wang, Ravindranath Droopad, Gerben Doombos, Georgios Vellianitis, Matthias Passlack. Regular, #9,390,913.
    Date awarded: 07/12/2016
  • “Insulated gate field effect transistors.” Jonathan Abrokwah, Ravindranath Droopad, Matthias Passlack. Regular, #8,847,280.
    Date awarded: 09/30/2014
  • “Method for forming an insulated gate field effect device.” Jonathan Abrokwah, Ravindranath Droopad, Matthias Passlack. Regular, #8,105,925.
    Date awarded: 01/31/2012
  • “MOSFET device featuring a superlattice barrier layer and method.” Ravindranath Droopad, Matthias Passlack, Karthik Rajagopalan. Regular, #7,799,647.
    Date awarded: 09/21/2010
  • “MOSFET structure and method of manufacture.” Ravindranath Droopad, Matthias Passlack. Regular, #7,692,224.
    Date awarded: 04/06/2010
  • “III-V compound semiconductor device with a surface layer in access regions having charge of polarity opposite to channel charge and method of making the same.” Matthias Passlack, Ravindranath Droopad, Karthik Rajagopalan. Regular, #7,682,912.
    Date awarded: 03/23/2010
View all intellectual property
  • Piner, Edwin L (Principal), Haque, Ariful (Co-Principal), Valles Molina, Damian (Co-Principal), Miyahara, Yoichi (Co-Principal), Droopad, Ravindranath (Supporting), Holtz, Mark W (Supporting), Scolfaro, Luisa M (Supporting), Miller, David R von (Supporting), Ahmed, Mohammad Iqbal (Supporting). Center for Ultrawide Bandgap Semiconductor Device Materials, National Science Foundation, Federal, $7500000. (Submitted: December 6, 2024, Funded: September 1, 2025 - August 31, 2030). Grant.
  • Haque, Ariful, Droopad, Ravindranath, Holtz, Mark W, Piner, Edwin L, Geerts, Wilhelmus J, Chen, Yihong, Hudnall, Todd W, Wistey, Mark A, Miyahara, Yoichi, Smith, Casey Eben, Mahato, Dip Narayan, Rastogi, Shiva Kumar, Kim, Namwon. Acquisition of a state-of-the-art Photoluminescence Spectrometer for Materials Characterization in Research and Education, Department of Defense, Federal, $434519. (Submitted: September 2023, Funded: 2024 - 2025). Grant.
  • Miyahara, Yoichi (Principal), Satchell, Nathan David (Co-Principal), Holtz, Mark W (Co-Principal), Kim, Namwon (Co-Principal), Martin, Benjamin (Co-Principal), Chen, Yihong (Supporting), Theodoropoulou, Nikoleta (Supporting), Geerts, Wilhelmus J (Supporting), Piner, Edwin L (Supporting), Haque, Ariful (Supporting), Droopad, Ravindranath (Supporting), Mahato, Dip Narayan (Supporting), Smith, Casey Eben (Supporting). MRI: Track 1 Acquisition of state-of-the-art lithography system for micro/nanometer scale device fabrication in research and education, National Science Foundation, Federal, $569780. (Submitted: November 14, 2023, Funded: September 1, 2024 - August 31, 2027). Grant.
  • Geerts, Wilhelmus J (Principal), Percent Contribution: %40, Tate, Jitendra S (Co-Principal), Percent Contribution: %25, Chen, Yihong (Co-Principal), Percent Contribution: %25, Droopad, Ravindranath (Other), Percent Contribution: %5, Rhodes, Christopher Peter (Other), Percent Contribution: %5. MRI: Development of triaxial Vibrating Sample Magnetometry for Research and Education, NSF, Federal, $119461. (Submitted: January 19, 2022, Funded: September 2022 - August 30, 2025). Grant.
  • Holtz, Mark W (Principal), Percent Contribution: %15, Chen, Yihong (Supporting), Percent Contribution: %11, Geerts, Wilhelmus J (Supporting), Percent Contribution: %15, Droopad, Ravindranath (Supporting), Percent Contribution: %8, Li, Jian (Co-Principal), Percent Contribution: %5, Myers, Thomas H (Supporting), Percent Contribution: %8, Piner, Edwin L (Supporting), Percent Contribution: %8, Theodoropoulou, Nikoleta (Supporting), Percent Contribution: %15, Zakhidov, Alexander (Supporting), Percent Contribution: %15. System of Integrated Characterization of Electronic Devices and Materials, U.S. AFOSR, Federal, $332086. (Funded: August 15, 2017 - August 14, 2018). Grant.
View all grants
  • Sultana, M., Samuels, B. C., Hartley, J., Lamsal, P., Azmain, M. A., Sarkar, P. K., … Haque, A. (2026). Epitaxial growth and characterization of hexagonal epsilon-(InxGa1-x)2O3 (x=0.05 and 0.15) on AlN. Journal of Physics D: Applied Physics, 59. https://doi.org/10.1088/1361-6463/ae9d8e
  • Sultana, M., Samuels, B. C., Sarkar, P. K., Miyahara, Y., Collingwood, A., Piner, E. L., … Haque, A. (2026). Investigation of Band Discontinuities at the Interface of ϵ-(In0.15Ga0.85)2O3 (0002) and AlN (0002) Heterojunction. IEEE Transactions on Materials for Electron Devices. https://doi.org/10.1109/TMAT.2026.3726842
  • Sarkar, P. K., Taqy, S. A. A., Sultana, M., Lamsal, P., Droopad, R., & Haque, A. (2026). Direct fabrication of diamond films on β-Ga2O3 using Q-carbon. Materials Science in Semiconductor Processing, 212, 110764. https://doi.org/10.1016/j.mssp.2026.110764
  • Karmakar, S., Azmain, M. A., Alaga, A. A., Manikanthababu, N., Emu, I. H., Droopad, R., … Haque, A. (2025). Charge carrier trapping and current conduction mechanisms in ZnGa2O4/n-SrTiO3 MOS capacitors. Journal of Materials Science: Materials in Electronics, 36(18), 1–15. https://doi.org/10.1007/s10854-025-15163-6
  • Manikanthababu, N., Karmakar, S., Shiam, I. F., Emu, I. H., Haque, A., & Droopad, R. (2025). Growth, optimization and high-temperature performance of GeO2/Ga2O3 MOSCAPs. Materials Science in Semiconductor Processing, 193, 109518. https://doi.org/10.1016/j.mssp.2025.109518
View all scholarly/creative works
  • Award / Honor Recipient: Fellow, National Academy of Inventors. December 2025 - Present
  • Award / Honor Recipient: Fellow, Institute of Electrical and Electrical Engineers. 2016 - Present
  • Award / Honor Recipient: Alpha Chi Favorite Professor. 2016 - Present
  • Award / Honor Recipient: Senior Member, Institute of Electrical and Electrical Engineers. 2006 - Present
  • Award / Honor Recipient: Engineer of the Year Award, IEEE Phoenix Section. 2006 - Present
View all awards
  1. Graduate Advisor

    Ingram School of Engineering

  2. Reviewer / Referee

    Swiss National Science Foundation

  3. Reviewer / Referee

    Journal of Material Chemistry

  4. Reviewer / Referee

    German Research Foundation

  5. Reviewer / Referee

    Departmant of Energy

  6. Reviewer / Referee

    Israeli Pazy Foundation

  7. View all activities