Biography and education
Short Bio:
Prof. Lee is currently a tenure-track Assistant Professor with a joint appointment in the Department of Physics and the Electrical Engineering Program at Texas State University. Dr. Lee earned his PhD in Materials Science & Engineering. Before joining Texas State, Prof. Lee spent 3.5 years in industry at Intel, where he worked on the development of advanced transistors for next-generation technology nodes. His research focuses on ultra-wide-bandgap semiconductors and microscopy characterization for next-generation, energy-efficient power electronics.
Education:
• Ph.D. in Materials Science and Engineering, University of Michigan - Ann Arbor, 2022
• M.S. in Materials Science and Engineering, University of Michigan - Ann Arbor, 2019
• B.S. in Materials Science and Engineering, National Tsing Hua University, 2016
Prof. Lee is currently a tenure-track Assistant Professor with a joint appointment in the Department of Physics and the Electrical Engineering Program at Texas State University. Dr. Lee earned his PhD in Materials Science & Engineering. Before joining Texas State, Prof. Lee spent 3.5 years in industry at Intel, where he worked on the development of advanced transistors for next-generation technology nodes. His research focuses on ultra-wide-bandgap semiconductors and microscopy characterization for next-generation, energy-efficient power electronics.
Education:
• Ph.D. in Materials Science and Engineering, University of Michigan - Ann Arbor, 2022
• M.S. in Materials Science and Engineering, University of Michigan - Ann Arbor, 2019
• B.S. in Materials Science and Engineering, National Tsing Hua University, 2016
Research Interests
Featured grants
- Herath Mudiyanselage, Dinusha Indunil (Principal), Percent Contribution: %50, Lee, Ming-Hsun (Co-Principal), Percent Contribution: %50. Ohmic Contacts Engineering for Ultra-Wide Bandgap Aluminum Nitride Power Devices, Texas State University, Texas State University, $24000. (Funded: January 12, 2026 - May 31, 2027). Grant.
Featured scholarly/creative works
- Masten, H. N., Lundh, J. S., Pennachio, D. J., Lee, M.-H., Spencer, J. A., Alema, F., … Tadjer, M. J. (2026). Si‑doped β‑(AlxGa1‑x)2O3 MESFETs grown via CIS‑MOCVD on (010) β‑Ga2O3. APL Electronic Devices. https://doi.org/https://doi.org/10.1063/5.0307330
- Jacobs, A. G., Spencer, J. A., Tadjer, M. J., Feigelson, B. N., Lamb, A., Lee, M.-H., … Anderson, T. J. (2024). Silicon Ion Implant Activation in β-(Al0.2Ga0.8)2O3. Journal of Electronic Materials, 53(6), 2811–2816. https://doi.org/10.1007/s11664-024-11075-z
- Lee, M.-H., Chou, T.-S., Bin Anooz, S., Galazka, Z., Popp, A., & Peterson, R. L. (2022). Effect of post-metallization anneal on (100) Ga2O3/Ti–Au ohmic contact performance and interfacial degradation. APL Materials, 10(9). https://doi.org/10.1063/5.0096245
- Lee, M.-H., Chou, T.-S., Bin Anooz, S., Galazka, Z., Popp, A., & Peterson, R. L. (2022). Exploiting the Nanostructural Anisotropy of β-Ga2O3 to Demonstrate Giant Improvement in Titanium/Gold Ohmic Contacts. ACS Nano, 16(8), 11988–11997. https://doi.org/10.1021/acsnano.2c01957
- Lee, M.-H. (2021). Investigation of Ohmic Contact Interfaces and Crystalline Defects for Wide-Bandgap Beta-Phase Gallium Oxide and its Alloys. https://doi.org/10.7302/3953
Featured service activities
- Reviewer / Referee
Applied Physics Letters
- Reviewer / Referee
Journal of Applied Physics
- Reviewer / Referee
Journal of Vacuum Science & Technology