Faculty Profiles

Reza, Md. S., Dey, T., Arbogast, A. W., Meng, Q., Bank, S. R., & Wistey, M. A. (2024). Confinement and Threshold Modeling for High Temperature GeSn and GeC/GeCSn Lasers. IEEE Journal of Selected Topics in Quantum Electronics, 31(1: SiGeSn Infrared Photon.), 1–11. https://doi.org/10.1109/jstqe.2024.3511716

Saha, J. K., Taqy, S. A., Sarkar, P. K., Rahaman, I., Arbogast, A. W., Dey, T., … Wistey, M. A. (2024). Observation of low-resistance Al and Ni p-type ohmic contacts to dilute GeC and GeCSn alloys. J. Vac. Sci. Technol.-B, 42(6). https://doi.org/10.1116/6.0003739

Rithvik Ramesh, Hsieh, T., Skipper, A. M., Meng, Q., Wen, K., Shafiei, F., … Bank, S. R. (2023). Interband second-order nonlinear optical susceptibility of asymmetric coupled quantum wells. Applied Physics Letters, 123(25), 251111. https://doi.org/10.1063/5.0168596

Dey, T., Arbogast, A. W., Meng, Q., Reza, Md. S., Muhowski, A. J., Cooper, J. J., … Wistey, M. A. (2023). Influence of H on Sn incorporation in GeSnC alloys grown using molecular beam epitaxy. Journal of Applied Physics, 134(19), 193102. https://doi.org/10.1063/5.0173429

Dey, T., Arbogast, A. W., Meng, Q., Reza, M. S., Muhowski, A. J., Cooper, J., … Wistey, M. A. (2023). Influence of H on Sn Incorporation in GeSnC Alloys Grown Using Molecular Beam Epitaxy. Journal of Applied Physics, 134(19), 193102. https://doi.org/https://doi.org/10.1063/5.0173429

Reza, M. S., Dey, T., Arbogast, A. W., Muhowski, A. J., Holtz, M. W., Stephenson, C. A., … Wistey, M. A. (2023). Growth of Tin-Free Germanium Carbides Using Carbon Tetrabromide (CBr4). J. Appl. Phys., 134, 183103. https://doi.org/10.1063/5.0172330

Dey, T., Arbogast, A. W., Meng, Q., Reza, S., Muhowski, A., Cooper, J., … Wistey, M. A. (2023). Why Room Temperature GeSn Lasers Need Carbon. In 2023 IEEE Silicon Photonics Conference (SiPhotonics) (pp. 1–2). IEEE. https://doi.org/10.1109/siphotonics55903.2023.10141895

Dey, T., Reza, M. S., Arbogast, A. W., Holtz, M. W., Droopad, R., Bank,Seth R., & Wistey, M. A. (2022). Molecular beam epitaxy of highly crystalline GeSnC using CBr4 at low temperatures. Applied Physics Letters, 121(12), 122104. https://doi.org/10.1063/5.0102093

Meng, Q., El-Jaroudi, R., White, R., Dey, T., Reza, M. S., Bank, S. R., & Wistey, M. A. (2022). Effects of B and In on the Band Structure of BGa(In)As Alloys. Journal of Applied Physics, 132(19), 193104. https://doi.org/10.1063/5.0125109

Gulyas, I., Stephenson, C. A., Meng, Q., Bank, S. R., & Wistey, M. A. (2021). The Carbon State in Dilute Germanium Carbides. Journal of Applied Physics, 129, 055701. https://doi.org/10.1063/1.5112057

Reza, Md. S., Gulyas, I., & Wistey, M. A. (2021). Mid-IR Gain of Tensile Germanium Waveguide Lasers with SiNx Stress Liners. In 2021 IEEE Photonics Society Summer Topicals Meeting Series (SUM) (pp. 1–2). IEEE. https://doi.org/10.1109/sum48717.2021.9505709

Kudrawiec, R., Polak, M. P., McNicholas, K. M., Kopaczek, J., Wistey, M. A., & Bank, S. R. (2020). Bowing of the band gap and spin-orbit splitting energy in BGaAs. Materials Research Express, 6(12). https://doi.org/10.1088/2053-1591/ab62e9

Gulyas, I., Kudrawiec, R., & Wistey, M. A. (2019). Electronic Structure of B(x)Ga(1-x)As Alloys Using Hybrid Functionals. Journal of Applied Physics, 126(9). https://doi.org/10.1063/1.5111992

Qi, M., O’Brien, W. A., Stephenson, C. A., Patel, V., Cao, N., Thibeault, B. J., … Wistey, M. A. (2017). Extended Defect Propagation in Highly Tensile-Strained Ge Waveguides. Crystals, 7(6), 157. https://doi.org/10.3390/cryst7060157

Stephenson, C. A., Gillett-Kunnath, M., O’Brien, W. A., Kudrawiec, R., & Wistey, M. A. (2016). Gas Source Techniques for Molecular Beam Epitaxy of Highly Mismatched Ge Alloys. Crystals, 6(12), 159. https://doi.org/10.3390/cryst6120159

Stephenson, C. A., O’Brien, W. A., Qi, M., Penninger, M., Schneider, W. F., & Wistey, M. A. (n.d.). Band Anticrossing in Dilute Germanium Carbides Using Hybrid Functionals. J. Electronic Materials, 45(4), 2121–2126. https://doi.org/10.1007/s11664-015-4300-9

Wistey, M. A., Stephenson, C. A., O’Brien, W. A., Qi, M., Penninger, M., & Schneider, W. F. (2016). Band structure of germanium carbides for direct bandgap silicon photonics,. J. Appl. Phys., 120, 053102.

Stephenson, C. A., O’Brien, W. A., Gillett-Kunnath, M., Man Yu, K., Kudrawiec, R., Stillwell, R. A., & Wistey, M. A. (2016). Band Structure of Germanium Carbides for Direct Bandgap Photonics.

O’Brien, W. A. A., Qi, M., Yan, L., Stephenson, C., Protasenko, V., Xing, H. (Grace), … Wistey, M. A. (2015). Self-Assembled Ge QDs Formed by High Temperature Annealing on GaAs and AlxGa1−xAs (001). J. Electronic Materials.

Wistey, M. A., Baraskar, A. K., Singisetti, U., Burek, G. J., Shin, B., Kim, E., … Rodwell, M. J. W. (2015). Control of InGaAs and InAs facets using metal modulation epitaxy,. J. Vac. Sci. Technol.-B, 30, 011208.

Stephenson, C. A., O’Brien, W., Qi, M., Penninger, M., Schneider, W., Gillett-Kunnath, M., … Wistey, M. A. (2015). Band Structure and Optical Properties of Dilute Ge:C Alloys.

Stephenson, C. A., O’Brien, W., Penninger, M., Schneider, W., Gillett- Kunnath, M., Zajicek, J., … Wistey, M. A. (2015). Band Structures and Extraction of Bowing Parameters from MBE Grown Ge:C.

Stephenson, C. A., Brien, W. A., Penninger, M., Gillett-Kunnath, M., Zajicek, J., Schneider, W. F., … Wistey, M. A. (2015). Band structure and characterization of dilute Ge:C alloys. In 2015 IEEE 12th International Conference on Group IV Photonics (GFP) (pp. 149–150). IEEE. https://doi.org/10.1109/group4.2015.7305995

Wistey, M. A. (2015). Core-Shell Upconverting Nanostructures (CSUNs).

Meng Qi, Wistey, M. A., Stephenson, C. A., Protasenko, V., O’Brien, W. A., Mintairov, A., & Xing, H. (Grace). (2014). Ge Quantum Dots Encapsulated by AlAs Grown by Molecular Beam Epitaxy on GaAs Without Extended Defects. Appl. Phys. Lett., 104, 073113.

O’Brien, W. A., Wu, B., Stephenson, C., Qi, M., Liang, K., Cress, S., … Xing, H. G. (2014). Optimal Oxide Passivation of Ge for Optoelectronics. ECS J. Solid State Sci. Technol, 3, P273–P276. https://doi.org/10.1149/2.0171407jss

Stephenson, C. A., O’Brien, W. A., Qi, M., Penninger, M., Gillett-Kunnath, M., Zajicek, J., … Wistey, M. A. (2014). Influence of C in Dilute Ge1-xCx Alloys.

Wistey, M. A., O’Brien, W. A., Qi, M., Stephenson, C. A., Protasenko, V., Mintairov, A., & Huili Xing. (2014). Self-Assembled Ge QDs Formed by High Temperature Annealing on AlAs (100).

Wistey, M. A. (2014). Advanced Group IV Photonics and Solar Cells.

Wistey, M. A., Stephenson, C. A., O’Brien, W. A., Qi, M., Penninger, M., Gillett-Kunnath, M., … Schneider, W. (2014). Dilute Ge1-xCx Alloys and Their Properties.

Wistey, M. A. (2014). Hide and Seek with Viewport Leaks.

Wistey, M. A., Patel, V., Loof, J. L., O’Brien, W. A., Qi, M., Erdman, A. J., & Stephenson, C. A. (2014). Analysis and Design of Core-Shell Upconverting Nanostructures (CSUNs).

Qi, M., Stephenson, C. A., O’Brien, W. A., & Wistey, M. A. (2013). Volmer-Weber Growth of Ge Quantum Dots on AlAs for Strong Carrier Confinement.

Xing, H. G., Zhou, G., Li, M., Lu, Y., Li, R., Wistey, M. A., … Seabaugh, A. (2013). Tunnel FETs with tunneling normal to the gate.

Qi, M., O’Brien, W., Stephenson, C., Patel, V., Cao, N., Thibeault, B., … Wistey, M. A. (2013). Strain Limitation Study of Tensile Strained Ge for Optical Device Applications.

Wistey, M. A., O’Brien, W. A., Stephenson, C. A., Qi, M., Patel, V., Protasenko, V., … Xing, H. (Grace). (2013). Freestanding Ge Membranes Hydrostatically Strained by Compressive SiNx Films toward a Direct Bandgap.

Wistey, M. A. (2013). ``Core-Shell Upconverting Nanostructures.

Zhou, G., Li, R., Vasen, T., Qi, M., Chae, S., Lu, Y., … Xing, H. (2012). Novel gate-recessed vertical InAs/GaSb TFETs with record high ION of 180 µA/µm at VDS = 0.5 V (p. 32.6).

Faria, F. A., Guo, J., Zhao, P., Li, G., Kandaswamy, P. K., Wistey, M. A., … Jena, D. (2012). Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by Molecular Beam Epitaxy. Appl. Phys. Lett., 101, 032109. https://doi.org/10.1063/1.47387

Zhou, G., Lu, Y., Li, R., Zhang, Q., Liu, Q., Vasen, T., … Xing, H. (Grace). (2012). InGaAs/InP tunnel FETs with a Sub-threshold Swing of 93 mV/dec and ION/IOFF Ratio Near 10^6. IEEE Electron Device Lett., 33, 782–784.

O’Brien, W. A., Qi, M., Stephenson, C., Protasenko, V., Cao, N., Thibeault, B., & Wistey, M. A. (2012). SiNx-strained Ge toward a Direct Bandgap.

Qi, M., O’Brien, W. A., Stephenson, C. A., Cao, N., Thibeault, B. J., & Wistey, M. A. (2012). Stability of Tensile-strained Ge Studied by Transmission Electron Microscopy.

Lu, Y., Zhou, G., Li, R., Liu, Q., Zhang, Q., Vasen, T., … Fay, P. (2012). Performance of AlGaSb/InAs TFETs with gate electric field and tunneling direction aligned. IEEE Electron Device Lett., 33, 655–657.

Guo, J., Li, G., Faria, F., Cao, Y., Wang, R., Verma, J., … Xing, H. (2012). MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 Ω-mm. IEEE Electron Device Letters, 33, 525–527.

Li, R., Lu, Y., Zhou, G., Liu, Q., Chae, S. D., Vasen, T., … Seabaugh, A. (2012). AlGaSb/InAs Tunnel Field-Effect Transistor with On-Current of 78 µA/µm at 0.5 V,. IEEE Electron Device Letters, 33, 363–365.

Li, R., Lu, Y., Chae, S. D., Zhou, G., Liu, Q., Chen, C., … Seabaugh, A. (2012). InAs/AlGaSb heterojunction tunnel field-effect transistor with tunnelling in-line with the gate field (Vol. 9, pp. 389–392). https://doi.org/10.1002/pssc.201100241

S. D. Chae, G. Zhou, Kwihangana, I., Li, R., Lu, Y., Liu, Q., … Seabaugh, A. (2011). Characterization of interface traps in metal-high k-InAs/GaSb TFETs.

Zhou, G., Lu, Y., Li, R., Zhang, Q., Hwang, W. S., Liu, Q., … Xing, H. (2011). Vertical InGaAs/InP tunnel FETs with tunneling normal to the gate. IEEE Electron Device Letters, 32, 1516–1518.

Seabaugh, A., Wistey, M. A., Chae, S. D., Fay, P., Hwang, W. S., Kosel, T., … Wallace, R. (2011). Interface traps and low subthreshold swing in III-V tunnel FETs.

Seabaugh, A., Chae, S., Fay, P., Hwang, W., Kosel, T., Li, R., … Zhang, Q. (2011). III-V Tunnel Field-Effect Transistors.

Vasen, T., Liu, Q., Rahman, M. S., Zhou, G., Lu, Y., Li, R., … Seabaugh, A. (2011). Lateral In0.53Ga0.47As tunneling field-effect transistor with regrown, self-aligned tunnel junction by molecular beam epitaxy.

Guo, J., Cao, Y., Lian, C., Zimmermann, T., Li, G., Verma, J., … Xing, H. (Grace). (2011). Metal-face InAlN/AlN/ GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy. Phys. Status Solidi A, 208, 1617–1619.

Zhou, G., Lu, Y., Li, R., Zhang, Q., Hwang, W., Liu, Q., … Xing, H. G. (2011). Self-aligned InAs/Al0.45Ga0.55Sb vertical tunnel FETs (pp. 205–206).

Zhou, G., Lu, Y., Li, R., Vasen, T., Liu, Q., Hwang, W. S., … Xing, H. (2011). Passivation Effects of ALD Oxides on Self-Aligned In0.53Ga0.47As/InAs/InP Vertical Tunnel FETs.

O’Brien, W., Wu, B., Stephenson, C., Arisio, C., Lieberman, M., & Wistey, M. A. (2011). Oxide Surface Passivation of Ge for Optoelectronic Applications (p. 119).

Guo, J., Verma, J., Cao, Y., Gao, X., Guo, S., Beam, E., … Huili (Grace) Xing. (2011). MBE Regrown Ohmic Contacts with Rc of 0.15 ohm-mm in InAlN/ GaN High Electron Mobility Transistor.

Rodwell, M. J. W., Singisetti, U., Wistey, M. A., Burek, G. J., Carter, A., Baraskar, A., … Asbeck, P. (2010). III-V MOSFETs: Scaling Laws, Scaling Limits, Fabrication Processes.

Wistey, M. A. (2010). Hybrid Integration of Photonics: Direct Bandgap Group IV’s?

Baraskar, A. K., Jain, V., Wistey, M. A., Lobisser, E., Thibeault, B. J., Gossard, A. C., & Rodwell, M. J. W. (2010). In- situ Refractory Ohmic Contacts to p-InGaAs.

Guo, J., Cao, Y., Lian, C., Zimmermann, T., Li, G., Verma, J., … Xing, H. (Grace). (2010). Metal-face InAlN/AlN/ GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy.

Baraskar, A., Jain, V., Wistey, M. A., Thibeault, B. J., Gossard, A. C., & Rodwell, M. J. W. (2010). In-situ and Ex-situ Ohmic Contacts To Heavily Doped p-InGaAs.

Baraskar, A., Wistey, M. A., Lobisser, E., Jain, V., Singisetti, U., Burek, G., … Rodwell, M. (2010). Ex-situ Ohmic Contacts to n-InGaAs Prepared by Atomic Hydrogen Cleaning. J. Vacuum Science and Technology B, 28, C517–C519.

Baraskar, A., Wistey, M. A., Jain, V., Lobisser, E., Singisetti, U., Burek, G., … Rodwell, M. (2010). Ex situ Ohmic contacts to n-InGaAs. J. Vac. Sci. Technol. B, 28, C517–C519.

Zhou, G., Zhu, J., Pinsukanjana, P., Kao, Y. C., Kosel, T., Fay, P., … Xing, H. (2010). Regrown InGaAs tunnel junctions for TFETs.

Baraskar, A., Jain, V., Wistey, M. A., Singisetti, U., Lee, Y. J., Thibeault, B., … Rodwell, M. J. (2010). High doping effects on in-situ Ohmic contacts to n-InAs. In 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) (pp. 1–4). IEEE. https://doi.org/10.1109/iciprm.2010.5516269

Rodwell, M. J. W., Carter, A. D., Burek, G. J., Wistey, M. A., Thibeault, B. J., Baraskar, A., … Taur, Y. (2010). A Self-Aligned Epitaxial Regrowth Process for Sub-100-nm III-V FETs.

Rodwell, M. J. W., Jain, V., Lobisser, E., Baraskar, A., Wistey, M. A., Singisetti, U., … Taur, Y. (2010). THz Transistors: Design and Process Technologies.

Baraskar, A., Wistey, M. A., Lobisser, E., Jain, V., Singisetti, U., Burek, G., … Rodwell, M. (2010). Ex-situ Ohmic Contacts to n-InGaAs Prepared by Atomic Hydrogen Cleaning.

G. J. Burek, Wistey, M. A., U. Singisetti, Nelson, A., Thibeault, B., Bank, S., … Rodwell, M. (2009). Height-selective etching for regrowth of self-aligned contacts using MBE. Journal of Crystal Growth, 311, 1984–1987.

Singisetti, U., Wistey, M. A., Burek, G. J., Arkun, E., Sun, Y., Kiwera, E. J., … Rodwell, M. J. W. (2009). InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology.

Singisetti, U., Zimmerman, J. D., Wistey, M. A., Cagnon, J., Thibeault, B. J., Rodwell, M. J. W., … Bank, S. R. (2009). ErAs epitaxial Ohmic contacts to InGaAs/InP. Appl. Phys. Lett., 94, 083505. https://doi.org/10.1063/1.3087313

Singisetti, U., Wistey, M. A., Burek, G., Baraskar, A. K., Thibeault, B. J., Gossard, A. C., … Lee, Y.-J. (2009). In0.53Ga0.47As Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth. IEEE Electron Device Lett., 30, 1128–1130.

Rodwell, M. J. W., Lobisser, E., Jain, V., Baraskar, A., Wistey, M. A., Singisetti, U., … Taur, Y. (2009). Sub-100-nm Process Technologies For THz InP HBTs & MOSFETs.

Rodwell, M. J. W., Wistey, M. A., Singisetti, U., Burek, G. J., Kim, E., Baraskar, A., … Taur, Y. (2009). Process Technologies for Sub-100-nm InP HBTs and InGaAs MOSFETs.

Mintairov, A. M., Sun, K., Merz, J. L., Yuen, H., Bank, S., Wistey, M. A., … Misiewicz, J. (2009). Atomic arrangement and emission properties of GaAs(In, Sb)N quantum wells. Semicond. Sci. Technol., 24, 075013.

Baraskar, A. K., Wistey, M. A., Jain, V., Singisetti, U., Burek, G., Thibeault, B. J., … Rodwell, M. J. (2009). Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs. J. Vac. Sci. Technol.-B, 27, 2036–2039.

Nidhi, S. Dasgupta, Wong, M. H., Singisetti, U., Wistey, M. A., Rodwell, M., Speck, J., & Mishra, U. (2009). Ultra- Low Contact Resistance for Self-Aligned HEMT Structures on N-Polar GaN by MBE Regrowth of InGaN-Based Contact Layers.

Wistey, M. A., Singisetti, U., Burek, G., Baraskar, A., Jain, V., Thibeault, B., … Lee, Y. J. (2009). Improved Migration-Enhanced Epitaxy for Self-Aligned InGaAs Devices.

Singisetti, U., Wistey, M. A., Burek, G. J., Baraskar, A. K., Cagnon, J., Thibeault, B. J., … Lee, Y.-J. (2009). 0.37 mS/µm In(0.53)Ga(0.47)As MOS- FET with 5 nm channel and Self-aligned Epitaxial Raised Source/ Drain. In 2009 Device Research Conference (pp. 253–254). IEEE. https://doi.org/10.1109/drc.2009.5354901

Singisetti, U., Wistey, M. A., Burek, G. J., Baraskar, A. K., Cagnon, J., Thibeault, B., … Yong-Ju Lee. (2009). Enhancement mode In0.53Ga0.47As MOSFET with self-aligned epitaxial source/drain regrowth. In 2009 IEEE International Conference on Indium Phosphide & Related Materials (pp. 120–123). IEEE. https://doi.org/10.1109/iciprm.2009.5012456

Wistey, M. A., Singisetti, U., Burek, G., Baraskar, A., Jain, V., Thibeault, B., … Lee, Y. J. (2009). III-V/Ge Channel Engineering for Future CMOS.

Jain, V., Baraskar, A. K., Wistey, M. A., Singisetti, U., Griffith, Z., Lobisser, E., … Rodwell, Mark. J. (2009). Effect of surface preparations on contact resistivity of TiW to highly doped n-InGaAs. In 2009 IEEE International Conference on Indium Phosphide & Related Materials (pp. 358–361). IEEE. https://doi.org/10.1109/iciprm.2009.5012438

Hwang, Y., Wistey, M. A., Cagnon, J., Engel-Herbert, R., & Stemmer, S. (2009). Metal-oxide-semiconductor capacitors with erbium oxide dielectrics on In0.53Ga0.47As channels. Appl. Phys. Lett., 94, 122907.

Kudrawiec, R., Poloczek, P., Misiewicz, J., Bae, H. P., Sarmiento, T., Bank, S. R., … Harris Jr., J. S. (2009). Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1.5-1.65 µm: Broadening of the fundamental transition. Appl. Phys. Lett., 94, 031903.

Xin, Y. C., Lin, C. Y., Li, Y., Bae, H. P., Yuen, H. B., Wistey, M. A., … Lester, L. F. (2008). Monolithic 1.55 µm GaInNAsSb quantum well passively modelocked lasers. Electron. Lett., 44, 581–582.

Singisetti, U., Wistey, M. A., Zimmerman, J. D., Thibeault, B. J., Rodwell, M. J. W., Gossard, A. C., & Bank, S. R. (2008). Ultralow resistance in situ Ohmic contacts to InGaAs/InP. Appl. Phys. Lett., 93, 183502.

Rodwell, M., Lind, E., Griffith, Z., CrookU, A. M., Bank, S. R., Singisetti, U., … Gossard, C. (2008). On the feasibility of few-THz bipolar transistors (pp. 17–21).

Rodwell, M., Wistey, M. A., Singisetti, U., Burek, G., Gossard, A., Stemmer, S., … Sachs, C. (2008). Device architecture and processing for III-V MOS technology.

Rodwell, M., Lobisser, E., Wistey, M. A., Jain, V., Baraskar, A., Lind, E., … Brar, B. (2008). Development of THz Transistors and (300-3000 GHz) sub-mm-wave Integrated Circuits.

Wistey, M. A., Singisetti, U., Burek, G. J., Thibeault, B. J., Cagnon, J., Stemmer, S., … Rodwell, M. J. W. (2008). Regrowth of Self-Aligned, Ultra Low Resistance Ohmic Contacts on InGaAs.

Kudrawiec, R., Yuen, H. B., Bank, S. R., Bae, H. P., Wistey, M. A., Harris, J. S., … Misiewicz, J. (2008). On the Fermi level pinning in as-grown GaInNAs(Sb)/GaAs quantum wells with indium content of 8%-32%,. J. Appl. Phys, 104, 033526-1-6,.

Wistey, M. A., Singisetti, U., Burek, G., Cagnon, J., Stemmer, S., Gossard, A., … Bank, S. (2008). Regrown Contacts for InGaAs Field Effect Transistors.

Rodwell, M., Wistey, M. A., U. Singisetti, G. Burek, A. Gossard, S. Stemmer, … Sachs, C. (2008). Technology development & design for 22 nm InGaAs/InP-channel MOSFETs.

Rodwell, M., Lind, E., Griffith, Z., CrookU, A. M., Bank, S. R., Singisetti, U., … Gossard, C. (2008). On the feasibility of few-THz bipolar transistors.

Yang, H., Khalili, A., Wistey, M. A., & Harris, J. S. (2007). Evanescent-coupled GaInNAsSb in-line fibre photodetectors. IET Optoelectronics, 1, 175–177.

Singisetti, U., CrookU, A. M., Lind, E., Wistey, M. A., Zimmerman, J. D., Gossard, A. C., … Bank, S. R. (2007). Ultra-Low Resistance Ohmic Contacts to InGaAs/InP.

Kudrawiec, R., Yuen, H. B., Bank, S. R., Bae, H. P., Wistey, M. A., Harris, J. S., … Misiewicz, J. (2007). Contactless electroreflectance approach to study the Fermi level position in GaInNAs/ GaAs quantum,. J. Appl. Phys., 102, 113712.

Oye, M., Wistey, M. A., Reifsnider, J., Yuen, H., Ptak, A., May, P., … Bank, S. (2007). Effects of Different Plasma Species (atomic N, metastable N, and ions) on the Optical Properties of Dilute Nitride Materials Grown by Plasma-Assisted Molecular-Beam Epitaxy,. Appl. Phys. Lett., 91, 191903.

Bank, S. R., Bae, H., Goddard, L. L., Yuen, H. B., Wistey, M. A., Kudrawiec, R., & Harris, J. S. (2007). Recent Progress on 1.55-µm Dilute-Nitride Lasers. J. Quantum Electron., 43, 773.

Harris, J. S., Kudrawiec, R., Yuen, H. B., Bank, S. R., Bae, H. P., Wistey, M. A., … Gugov, T. (2007). Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications,. Physica Status Solidi B, 244, 2707–2729.

Sun, K., Mintairov, A., Kosel, T., Merz, J., Yuen, H., Bank, S., … Peake, G. (2007). Composition Fluctuation and Carrier Localization in GaAs(In,Sb)N Quantum Wells.

Oye, M., Wistey, M. A., Reifsnider, J., Yuen, H., Ptak, A., May, P., … Harris, J. (2007). Effects of Different Plasma Species on the Optical Properties of Dilute Nitrides Grown by Plasma-Assisted Molecular-Beam Epitaxy.

Sun, K., Mintairov, A. M., Merz, J. L., Peak, G., Yuen, H., Bank, S., … Ustinov, V. (2007). Effect of composition fluctuations on emission properties of GaAs(In,Sb)N QWs.

Bae, H. P., Bank, S. R., Yuen, H. B., Sarmiento, T., Pickett, E. R., Wistey, M. A., & Harris, J. S. (2007). Temperature dependencies of annealing behaviors of GaInNAsSb/GaNAs quantum wells for long wavelength dilute-nitride lasers. Appl. Phys. Lett., 90, 231119.

Jackrel, D. B., Bank, S. R., Yuen, H. B., Wistey, M. A., & Harris, J. S. (2007). Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy, 101, 114916.

Oye, M. M., Shahrjerdi, D., Ok, I., Hurst, J. B., Lewis, S. D., Dey, S., … Banerjee, S. K. (2007). Molecular-beam Epitaxy growth of device-compatible GaAs on Silicon substrates with thin (~80nm) Si(1-x)Ge(x) step-graded buffer layers for high-k III-V MOSFET applications. J. Vac. Sci. Technol.-B, 25, 1098.

Rodwell, M., Lind, E., Griffith, Z., Bank, S. R., Crook, A. M., Singisetti, U., … Gossard, C. (2007). Frequency Limits of InP-based Integrated Circuits,” IEEE 19th International Conference on Indium Phosphide & Related Materials (IPRM) (pp. 14–18).

Xin, Y.-C., Lester, undefined F., Bank, S. R., Bae, H. P., Yuen, H. B., Wistey, M. A., & Harris Jr., J. S. (2007). Monolithic 1.55-µm GaInNAsSb quantum well mode-locked lasers,” Conference on Lasers and Electro-Optics 2007 (CLEO ’07).

Kudrawiec, R., Bank, S. R., Yuen, H. B., Bae, H., Wistey, M. A., Goddard, L. L., & Harris, J. S. (2007). Conduction band offset for Ga0.62In0.38NxAs0.991−xSb0.009/GaNyAs1−y/GaAs systems with the ground state transition at 1.5-1.65 µm,. Appl. Phys. Lett., 90, 131905.

Kudrawiec, R., Yuen, H. B., Bank, S. R., Bae, H., Wistey, M. A., Harris, J. S., … Misiewicz, J. (2007). Fermi level shift in GaInNAsSb/GaAs quantum wells upon annealing studied by contactless electroreflectance. Appl. Phys. Lett., 90, 061902.

Kudrawiec, R., Yuen, H. B., Bank, S. R., Bae, H. P., Wistey, M. A., Harris, J. S., … Misiewicz, J. (2007). Electromodulation spectroscopy of interband transitions in GaInNAsSb/GaAs quantum wells with high indium content. Physica Status Solidi A., 204, 364–372.

Kudrawiec, R., Yuen, H. B., Bank, S. R., Bae, H. P., Wistey, M. A., Harris, J. S., … Misiewicz, J. (2007). The influence of antimony on the optical quality of highly strained GaInNAs/GaAs QWs investigated by contactless electroreflectance. Physica Status Solidi A., 204, 543–546.

Wistey, M. A., Fang, Y. Y., Tolle, J., Chizmeshya, A. V. G., & Kouvetakis, J. (2007). Chemical routes to Ge/Si(100) structures for low temperature Si-based semiconductor applications. Appl. Phys. Lett., 90, 082108.

Kudrawiec, R., Wistey, M. A., Yuen, H. B., Motyka, M., Gladysiewicz, M., Misiewicz, J., … Harris, J. S. (2007). Contactless electroreflectance of GaInNAsSb/GaAs single quantum wells with indium content of 8%-32%,. J. Appl. Phys., 101, 103504.

Bank, S. R., Bae, H. P., Goddard, L. L., Yuen, H. B., Wistey, M. A., & Harris, J. S. (2006). Very low-threshold 1.55-µm dilute-nitride lasers (pp. 25–26).

Jackrel, D., Ptak, A., Bank, S., Yuen, H., Wistey, M. A., Friedman, D., … Harris Jr, J. S. (2006). GaInNAsSb solar cells grown by molecular beam epitaxy (p. 4).

Kudrawiec, R., Gladysiewicz, M., Motyka, M., Misiewicz, J., Yuen, H. B., Bank, S. R., … Harris, J. S. (2006). Contactless electroreflectance spectroscopy of Ga(In)NAs/GaAs quantum well structures containing Sb atoms. Appl. Surf. Sci., 253, 152–157.

Bank, S. R., Yuen, H. B., Bae, H., Wistey, M. A., & Harris Jr, J. S. (2006). Overannealing effects in GaInNAs(Sb) alloys and their importance to laser applications. Appl. Phys. Lett., 88, 221115.

Kudrawiec, R., Gladysiewicz, M., Misiewicz, J., Yuen, H. B., Bank, S. R., Wistey, M. A., … Harris, J. S. (2006). Interband transitions in GaN0.02As0.98-xSbx/GaAs (0 < x ≤ 0.11) single quantum wells studied by contactless electroreflectance spectroscopy,. Phys. Rev. B, 73, 245413.

Bank, S. R., Yuen, H. B., Bae, H. P., Wistey, M. A., Moto, A., & Harris, J. S. (2006). Enhanced luminescence in GaInNAsSb quantum wells through variation of the arsenic and antimony fluxes. Appl. Phys. Lett., 88, 241923.

Kudrawiec, R., Motyka, M., Gladysiewicz, M., Misiewicz, J., Yuen, H. B., Bank, S. R., … Harris, J. S. (2006). Band gap discontinuity in Ga0.9In0.1N0.027As0.973-xSbx/GaAs single quantum wells with 0 ≤ x ≤ 0.06 studied by contactless electroreflectance spectroscopy. Appl. Phys. Lett., 88, 221113.

Yuen, H. B., Bank, S. R., Bae, H., Wistey, M. A., & Harris, J. S. (2006). Effects of strain on the optimal annealing temperature of GaInNAsSb quantum wells. Appl. Phys. Lett., 88, 221913.

Ptak, A. J., Friedman, D. J., Kurtz, S., Reedy, R. C., Young, M., Jackrel, D. B., … Harris, J. S. (2006). Calcium impurities in enhanced-depletion-width GaInNAs grown by molecular-beam epitaxy,. J. Vac. Sci. Technol.-B, 24, 1540–1543.

Wistey, M. A., Bank, S. R., Bae, H. P., Yuen, H. B., Goddard, L. L., Pickett, E. R., & Harris, J. S. (2006). Monolithic GaInNAsSb Vertical Cavity Surface Emitting Lasers at 1534nm.

Bank, S. R., Bae, H., Yuen, H. B., Wistey, M. A., Goddard, L. L., & Harris, J. S. (2006). Low-Threshold Continuous-Wave 1.55-µm GaInNAsSb Lasers.

Yuen, H. B., Bank, S. R., Bae, H., Wistey, M. A., & Harris Jr., J. S. (2006). The role of antimony on properties of widely varying GaInNAsSb compositions. J. Appl. Phys., 99, 093504.

Bank, S. R., Bae, H. P., Yuen, H. B., Goddard, L. L., Wistey, M. A., Sarmiento, T., & Harris, J. S. (2006). Low-Threshold CW 1.55-µm GaAs-Based Lasers.

Wistey, M. A., Bank, S. R., Bae, H. P., Yuen, H. B., Pickett, E. R., Goddard, L. L., & Harris, J. S. (2006). GaInNAsSb/GaAs vertical cavity surface emitting lasers at 1534nm. Electron. Lett., 42, 282–283.

Bank, S. R., Bae, H. P., Yuen, H. B., Wistey, M. A., & Harris, J. S. (2006). Room-temperature continuous-wave 1.55 µm GaInNAsSb laser on GaAs. Electron. Lett., 42, 156–157.

Kudrawiec, R., Gladysiewicz, M., Misiewicz, J., Yuen, H. B., Bank, S. R., Wistey, M. A., … Harris, J. S. (2006). Photoreflectance spectroscopy of a Ga0.62In0.38N0.026As0.954Sb0.02/GaAs single quantum well tailored at 1.5 µm. Solid State Commun., 137, 138–141.

Kudrawiec, R., Sitarek, P., Misiewicz, J., Bank, S. R., Yuen, H. B., Wistey, M. A., & Harris Jr., J. S. (2005). Interference Effects in Electromodulation Spectroscopy Applied to GaAs-Based Structures: a Comparison of Photoreflectance and Contactless Electroreflectance. Appl. Phys. Lett., 86, 091115.

Wistey, M. A., Bank, S. R., Yuen, H. B., & Harris, J. S. (2005). Nitrogen plasma optimization for high quality dilute nitrides. J. Cryst Growth, 278, 229–233.

Wistey, M. A., Bank, S. R., Yuen, H. B., Goddard, L. L., & Harris, J. S. (2005). Protecting wafer during plasma ignition by use of an arsenic cap. J. Vac. Sci. Technol.-B, 23, 1324–1327.

Wistey, M. A., Bank, S. R., Yuen, H. B., & Harris, J. S. (2005). Using beam flux monitor as Langmuir probe for plasma-assisted MBE. J. Vac. Sci. Technol.-A, 23, 460–464.

Yuen, H. B., Bank, S. R., Wistey, M. A., Harris Jr, J. S., Seong, M. J., Yoon, S., … Misiewicz, J. (2005). Improved optical quality of GaNAsSb in the dilute Sb limit. J. Appl. Phys, 97, 1–5.

Jackrel, D., Yuen, H., Bank, S., Wistey, M. A., Fu, J., Yu, X., … Harris, J. S. (2005). Thick lattice- matched GaInNAs films in photodetector applications (Vol. 5726, pp. 27–34).

Bank, S. R., Goddard, L. L., Wistey, M. A., Yuen, H. B., & Harris, J. S. (2005). On the Temperature Sensitivity of 1.5 µm GaInNAsSb Lasers. IEEE J. Select. Topics Quantum Electron., 11, 1089–1098.

Kudrawiec, R., Motyka, M., Misiewicz, J., Yuen, H. B., Bank, S. R., Wistey, M. A., … Harris, J. S. (2005). Photoluminescence from as-grown and annealed GaN0.027As0.863Sb0.11/GaAs single quantum wells. J. Appl. Phys., 98, 063527.

Bank, S. R., Yuen, H. B., Wistey, M. A., Lordi, V., Bae, H. P., & Harris, J. S. (2005). Effects of growth temperature on the structural and optical properties of 1.55 µm GaInNAsSb quantum wells grown on GaAs. Appl. Phys. Lett., 87, 21908-1–3.

Bank, S. R., Wistey, M. A., Yuen, H. B., Lordi, V., Gambin, V. F., & Harris Jr, J. S. (2005). Effects of Antimony and Ion Damage on Carrier Localization in MBE-Grown GaInNAs. J. Vac. Sci. Technol.- B, 23, 1320–1323.

Yuen, H. B., Wistey, M. A., Bank, S. R., Hopil Bae, A. Moto, & J. S. Harris. (2005). An investigation of nitrogen flow variation into an rf plasma cell on plasma properties and GaInNAs(Sb) grown by molecular beam epitaxy. J. Vac. Sci. Technol.-B, 23, 1328–1332.

Bank, S. R., Wistey, M. A., Yuen, H. B., Goddard, L. L., Bae, H. P., & Harris Jr, J. S. (2005). Molecular- Beam Epitaxy Growth of Low-Threshold CW GaInNAsSb Lasers at 1.5 µm. J. Vac. Sci. Technol.-B, 23, 1337–1340.

Goddard, L. L., Bank, S. R., Wistey, M. A., Yuen, H. B., Bae, H. P., & Harris Jr, J. S. (2005). Differential gain and nonlinear gain compression of GaInNAsSb/GaAs lasers at 1.5µm (Vol. 1, pp. 86–88).

Bank, S. R., Wistey, M. A., Goddard, L. L., Yuen, H. B., Bae, H. P., & Harris Jr, J. S. (2005). 1.5 µm GalnNAsSb lasers on GaAs (Vol. 1, pp. 89–91).

Oye, M. M., Wistey, M. A., Reifsnider, J. M., Agarwal, S., Mattord, T. J., Govindaraju, S., … Yuen, H. B. (2005). Ion damage effects from negative deflector plate voltages during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides. Appl. Phys. Lett., 86, 221902-1–3.

Goddard, L. L., Bank, S. R., Wistey, M. A., Yuen, H. B., Rao, Z. L., & Harris Jr, J. S. (2005). Recombination, Gain, Band Structure, Efficiency, and Reliability of 1.5 µm GaInNAsSb/GaAs Lasers. J. Appl. Phys, 97, 83101-1–15.

Kudrawiec, R., Ryczko, K., Misiewicz, J., Yuen, H. B., Bank, S. R., Wistey, M. A., … Harris Jr., J. S. (2005). The Band Gap Discontinuity in GaNAsSb/GaAs Single Quantum Wells Investigated by Photoreflectance Spectroscopy. Appl. Phys. Lett, 86, 141908-1–3.

Wistey, M. A., Goddard, L. L., Bank, S. R., Yuen, H. B., & Harris, Jr., J. S. (2005). High-performance GaInNAsSb/GaAs lasers at 1.5 um. In SPIE Proceedings (Vol. 5738, pp. 180–191). SPIE. https://doi.org/10.1117/12.591447

Kudrawiec, R., Ryczko, K., Misiewicz, J., Yuen, H. B., Bank, S. R., Wistey, M. A., … Harris JR, J. S. (2005). Photoreflectance and Photoluminescence Investigations of a Step-Like GaInNAsSb/ GaAsN/GaAs Quantum Well Tailored at 1.5 µm: the Energy Level Structure and the Stokes Shift. J. Appl. Phys., 97, 053515.

Yuen, H. B., Kudrawiec, R., Ryczko, K., Misiewicz, J., Bank, S. R., Wistey, M. A., … Harris, J. S. (2005). Investigation of GaNAsSb and GaInNAsSb/GaAs Band Offsets.

Jackrel, D. B., Yuen, H. B., Bank, S. R., Wistey, M. A., Yu, X., Fu, J., … Harris Jr, J. S. (2005). A comparison of lattice-matched GaInNAs and metamorphic InGaAs photodetector devices (Vol. 864, pp. 271–276).

Lordi, V., Yuen, H. B., Bank, S. R., Wistey, M. A., Harris, J. S., & Friedrich, S. (2005). Nearest-neighbor distributions in Ga1−xInxNyAs1−y and Ga1−xInxNyAs1−y−zSbz thin films upon annealing. Phys. Rev. B, 71, 125309-1–8.

Harris Jr., J. S., Wistey, M. A., Bank, S., Goddard, L., Lordi, V., Bae, H., & H, Y. (2004). Long-Wavelength Dilute Nitride-Antimonide Lasers. In M. Henini (Ed.), Dilute Nitride (III-N-V) Semiconductors: Physics and Technology. Taylor & Francis.

Harris Jr., J. S., Wistey, M. A., Bank, S., Lordi, V., Gugov, T., Bae, H., & Goddard, L. (2004). Long-Wavelength Dilute Nitride-Antimonide Lasers. In M. Henini (Ed.), Dilute Nitride (III-N-V) Semiconductors: Physics and Technology. Taylor & Francis.

Wistey, M. A., Bank, S. R., Yuen, H. B., Gambin, V. F., & Harris, J. S. (2004). Low-Voltage Deflection Plates Reduce Plasma Damage in MBE Dilute Nitride Growth.

Wistey, M. A., Bank, S. R., Yuen, H. B., Bae, H., & Harris, J. S. (2004). Nitrogen Plasma Optimization for High Quality Dilute Nitrides.

L. L. Goddard, S. R. Bank, Wistey, M. A., H. B. Yuen, H. P. Bae, & J. S. Harris. (2004). Reduced monomolecular recombination in GaInNAsSb/GaAs lasers at 1.5µm.

Yuen, H. B., Seong, M. J., Yoon, S., Kudrawiec, R., Bank, S. R., Wistey, M. A., … Harris Jr, J. S. (2004). Improved Optical Quality from Indium-Free GaNAsSb in the Dilute Sb (<3%) Limit.

Yuen, H. B., Bank, S. R., Wistey, M. A., Harris Jr, J. S., & Moto, A. (2004). Comparison of GaNAsSb and GaNAs as Quantum Well Barriers for GaInNAsSb Optoelectronic Devices Operating at 1.3-1.55 µm. J. Appl. Phys, 96.

Gollub, D., Kamp, M., Forchel, A., Seufert, J., Bank, S. R., Wistey, M. A., … Harris Jr, J. S. (2004). Continuous-wave operation of GaInNAsSb distributed feedback lasers at 1.5 µm. Electron. Lett., 40, 1487–1488.

Yuen, H. B., Wistey, M. A., Bank, S. R., Bae, H., Moto, A. A., & Harris, J. S. (2004). An investigation of nitrogen flow variation into an rf plasma cell on plasma properties and GaInNAs(Sb) grown by molecular beam epitaxy.

Bank, S. R., Wistey, M. A., Yuen, H. B., Lordi, V., Gambin, V. F., & Harris Jr, J. S. (2004). Effects of Antimony and Ion Damage on Carrier Localization in MBE-Grown GaInNAs.

Bank, S. R., Wistey, M. A., Yuen, H. B., Goddard, L. L., Bae, H. P., & Harris Jr, J. S. (2004). MBE Growth of Low-Threshold CW GaInNAsSb Lasers at 1.5 µm,.

Wistey, M. A., Bank, S. R., Yuen, H. B., Goddard, L., Gugov, T., & Harris, J. S. (2004). Protecting wafer surface during GaInNAs plasma ignition by use of an arsenic cap.

Harris Jr, J. S., Bank, S. R., Wistey, M. A., & Yuen, H. B. (2004). GaInNAs(Sb) long wavelength communications lasers (Vol. 151, pp. 407–416). IEE, UK.

Bank, S. R., Wistey, M. A., Goddard, L. L., Yuen, H. B., Bae, H. P., & Harris, J. S. (2004). High Performance 1.5-µm GaInNAsSb Lasers Grown on GaAs. Electron. Lett., 40, 1186–1187.

Bank, S. R., Wistey, M. A., Goddard, L. L., Yuen, H. B., & Harris, J. S. (2004). Low Threshold, Continuous Wave, 1.5 µm GaInNAsSb Lasers Grown on GaAs. IEEE J. Quantum Electron, 40, 656–664.

Bank, S. R., Lordi, V., Wistey, M. A., Yuen, H. B., & Harris, J. S. (2004). Temperature Dependent Behavior of GaInNAs(Sb) Alloys Grown on GaAs.

Bank, S. R., Wistey, M. A., Yuen, H. B., Goddard, L. L., & Harris, J. S. (2004). The role and suppression of carrier leakage in 1.5 µm GaInNAsSb/GaAs lasers.

Wistey, M. A., Bank, S. R., Yuen, H. B., Goddard, L. L., & Harris, J. S. (2004). GaInNAs(Sb) vertical-cavity surface-emitting lasers at 1.46µm. J. Vac. Sci. Technol.-B, 22, 1562–1564.

Gugov, T., Gambin, V., Wistey, M. A., Yuen, H., Bank, S., & Harris, J. S. (2004). Use of transmission electron microscopy in the characterization of GaInNAs(Sb) quantum well structures grown by molecular beam epitaxy. J. Vac. Sci. Technol.-B, 22, 1588–1592.

Fu, J. X., Bank, S. R., Wistey, M. A., Yuen, H. B., & Harris, J. S. (2004). Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2.04 µm. J. Vac. Sci. Technol.-B, 22, 1463–1467.

Goddard, L. L., Bank, S. R., Wistey, M. A., Yuen, H. B., & Harris, J. S. (2004). Measurements of Intrinsic Properties of High Power CW Single Quantum Well GaInNAsSb/GaAs Lasers at 1.5µm.

Bank, S. R., Goddard, L. L., Wistey, M. A., Yuen, H. B., & Harris, J. S. (2004). The Temperature Sensitivity of 1.5 µm GaInNAsSb Lasers on GaAs.

Wistey, M. A., Bank, S. R., Yuen, H. B., Goddard, L. L., & Harris, J. S. (2004). GaInNAsSb/GaNAs VCSELs at 1.46 µm.

Lordi, V., Yuen, H. B., Bank, S. R., Wistey, M. A., & Harris, J. S. (2004). Electroabsorption of GaInNAs and GaInNAsSb quantum wells at 1300 and 1550 nm.

Khalili, A., Wistey, M. A., & Harris Jr, J. S. (2004). Side-coupled in-line fiber-semiconductor laser. In Proc. SPIE (Vol. 5355, p. 159). SPIE. https://doi.org/10.1117/12.532111

Lordi, V., Yuen, H. B., Bank, S. R., Wistey, M. A., & Harris Jr, J. S. (2004). Electroabsorption Properties of GaInNAs(Sb) Quantum Wells at 1300–1600 nm.

Gugov, T., Wistey, M. A., Yuen, H., Bank, S., & Harris Jr, J. S. (2004). Structural characterization of molecular beam epitaxy grown GaInNAs and GaInNAsSb quantum wells by transmission electron microscopy.

Yuen, H. B., Bank, S. R., Wistey, M. A., Bae, H., Harris Jr, J. S., & Moto, A. (2004). Effects of N2 Flow on GaInNAs Grown by a RF Plasma cell in MBE.

Bank, S. R., Wistey, M. A., Yuen, H. B., Goddard, L. l, & Harris, J. S. (2004). Progress Towards High Power 1.5 µm GaInNAsSb/GaAs Lasers for Raman Amplifiers.

Bank, S., Ha, W., Gambin, V., Wistey, M. A., Yuen, H., Goddard, L., & Harris, J. S. (2003). 1.5-µm GaInNAs(Sb) Lasers Grown on GaAs by MBE,. Cryst. Growth, 251, 367–371.

Volz, K., Gambin, V., Ha, W., Wistey, M. A., Yuen, H., Bank, S., & Harris, J. S. (2003). The role of Sb in the MBE growth of (GaIn)(NAsSb). Cryst. Growth, 251, 360–366.

Thrush, E., Levi, O., Wang, K., Wistey, M. A., & Harris, J. S. (2003). Integrated semiconductor fluorescent detection system for biochip and biomedical applications (Vol. 4626, pp. 289–297).

Yuen, H. B., Lordi, V., Wistey, M. A., Bank, S. R., Harris Jr, J. S., & Moto, A. (2003). Analysis of Material Properties of GaNAs(Sb) Grown by MBE.

Wistey, M. A., Bank, S. R., Yuen, H. B., Goddard, L. L., & Harris, J. S. (2003). Monolithic, GaInNAsSb VCSELs at 1460nm on GaAs by MBE. Electron. Lett, 39, 1822–1823.

Wistey, M. A., Bank, S. R., Yuen, H. B., Goddard, L. L., & Harris, J. S. (2003). Real-Time Ion Count from Nitrogen Plasma Source.

Wistey, M. A., Bank, S. R., Yuen, H. B., Goddard, L. L., & Harris, J. S. (2003). GaInNAs(Sb) VCSELs at 1460nm.

Bank, S. R., Wistey, M. A., Yuen, H. B., Goddard, L. L., & Harris, J. S. (2003). A Low Threshold CW GaInNAsSb/GaAs Laser at 1.49 µm. Electron. Lett., 39, 1445–1446.

Bank, S. R., Wistey, M. A., Yuen, H. B., Goddard, L. L., & Harris, J. S. (2003). Low Threshold, CW, Room Temperature 1.49 µm GaAs-Based Lasers.

Yang, H., Khalili, A., Wistey, M. A., Bank, S., Yuen, H., Harris, J., … Moslehi, B. (2003). Long wavelength GaInNAs(Sb) in-line fiber photodetector on GaAs.

Yuen, H. B., Bank, S. R., Wistey, M. A., Moto, A., & Harris, J. S. (2003). An Investigation of GaNAs(Sb) for Strain Compensated Active Regions at 1.3 and 1.55 µm.

Yuen, H. B., Bank, S. R., Wistey, M. A., Ha, W., Gambin, V., Moto, A., & Harris Jr, J. S. (2003). Analysis of Material Properties of GaNAs(Sb) Grown by MBE.

Bank, S. R., Yuen, H. B., Ha, W., Gambin, V. F., Wistey, M. A., & Harris, J. S. (2003). Strong Photoluminescence Enhancement of 1.3 µm GaInNAs Active Layers by Introduction of Antimony.

Bank, S. R., Wistey, M. A., Yuen, H. B., Goddard, L. L., & Harris, J. S. (2003). Low Threshold, CW, Room Temperature 1.49 µm GaAs-Based Lasers.

Gambin, V., Lordi, V., HA, W., Wistey, M. A., Takizawa, T., Uno, K., … Harris, J. S. (2003). Structural changes on annealing of MBE grown (Ga, In) (N, As) as measured by X-ray absorption fine structure. Cryst. Growth, 251, 408–411.

Thrush, E., Wang, K., Levi, O., Wistey, M. A., Harris Jr, J. S., & Smith, S. J. (2003). High throughput integration of optoelectronics devices for fluorescent detection.

Thrush, E., Levi, O., Wang, K., Wistey, M. A., Harris, J. S., & Smith, S. J. (2002). High throughput devices for biochip fluorescent detection (Vol. 4982, pp. 162–169).

Volz, K., Gambin, V., Ha, W., Wistey, M. A., & Harris, J. S. (2002). Structure and composition of (GaIn) (NAsSb)/GaAs multi quantum well structures grown by MBE.

Chin, H., Keeler, G. A., Helman, N. C., Wistey, M. A., Miller, D. A. B., & Harris Jr, J. S. (2002). Differential Optical Remoting of Ultrafast Charge Packets Using Self-Linearized Modulation.

Ha, W., Gambin, M., Wistey, M. A., Bank, S., Yuen, H., Kim, S., & Harris, J. (2002). Long Wavelength GaInNAs(Sb) Lasers on GaAs. Quantum Electron, 38, 1260–1267.

Gambin, V., Lordi, V., Ha, W., Wistey, M. A., Volz, K., Bank, S., … Harris, J. (2002). High Intensity 1.3– 1.6 µm Luminescence and Structural Changes on Anneal from MBE Grown (GA, In)(N,As,Sb).

Ha, W., Gambin, V., Bank, S., Wistey, M. A., Yuen, H., Goddard, L., … Harris Jr, J. S. (2002). A 1.5 µm GaInNAs(Sb) Laser Grown on GaAs by MBE.

Ha, W., Gambin, V., Bank, S., Wistey, M. A., Yuen, H., Kim, S., & Harris Jr, J. S. (2002). A 1.5 µm GaInNAs(Sb) Laser Grown on GaAs by MBE.

Gambin, V., Ha, W., Wistey, M. A., Bank, S., Yuen, H., Kim, S., & Harris, J. (2002). GaInNAsSb for 1.3–1.6 µm Long-Wavelength Lasers Grown by Molecular Beam Epitaxy. Select. Topics Quantum Electron, 8, 795–800.

Ha, W., Gambin, V., Bank, S., Wistey, M. A., Kim, S., & Harris Jr, J. S. (2002). A 1.5 µm GaInNAs(Sb) Laser Grown on GaAs by MBE.

Ha, W., Gambin, V., Wistey, M. A., Bank, S., Kim, S., & Harris, J. (2002). Multiple Quantum Well GaInNAs/ GaNAs Ridge-Waveguide Laser Diodes Operating Out to 1.4 µm. IEEE Photon. Technol. Lett, 14.

Ha, W., Gambin, V., Bank, S., Wistey, M. A., Kim, S., & Harris Jr, J. S. (2002). Long Wavelength GaInNAs(Sb) Lasers on GaAs.

Ha, W., Gambin, V., Bank, S., Wistey, M. A., Kim, S., & Harris Jr, J. S. (2002). Long Wavelength GaInNAs(Sb) Lasers on GaAs.

Ha, W., Gambin, V., Bank, S., Wistey, M. A., Kim, S., & Harris Jr, J. S. (2002). Long Wavelength GaInNAs(Sb) Lasers on GaAs.

Gambin, V., Ha, W., Wistey, M. A., Bank, S., Yuen, H., Kim, S., & Harris, J. (2002). Long Wavelength, High Efficiency Photoluminescence from MBE Grown GaInNAsSb.

Wistey, M. A., Lordi, V., Gambin, V., Ha, W., Bank, S., & Harris, J. (2002). Examination of N Incorporation into GaInNAs (Vol. 722).

Gambin, V., Ha, W., Wistey, M. A., Bank, S., Yuen, H., Kim, S., & Harris, J. (2002). High Intensity 1.3–1.6 µm Luminescence from MBE Grown GaInNAsSb, 722.

Harris Jr, J. S., Larson, M., Spruytte, S., Coldren, C., Gambin, V., Ha, W., … Gugov, T. (2002). -A New Material in the Quest for Communication Lasers.

Ha, W., Gambin, V., Wistey, M. A., Bank, S., Yuen, H., Kim, S., & Harris, J. (2002). Long Wavelength GaInNAsSb/GaNAsSb Multiple Quantum Well Lasers. Electron. Lett, 38, 277–228.

Ha, W., Gambin, V., Wistey, M. A., Bank, S. R., Yuen, H. B., Kim, S., & Harris Jr, J. S. (2002). Long Wavelength GaInNAs(Sb) Lasers on GaAs.

Ha, W., Gambin, V., Bank, S., Wistey, M. A., Kim, S., & Harris Jr, J. S. (2002). High Efficiency Multiple Quantum Well GaInNAs/GaNAs Ridge-Waveguide Diode Lasers.

Gambin, V., Ha, W., Wistey, M. A., Kim, S., & Harris, J. S. (2001). GaInNAs Material Properties for Long Wavelength Opto-Electronic Devices.

Gambin, V., Ha, W., Wistey, M. A., Bank, S., Yuen, H., Kim, S., & Harris, J. (2001). Material Properties for Long Wavelength Opto-Electronic Devices (Vol. 692).

Gambin, V., Ha, W., Bank, S. R., Wistey, M. A., Yuen, H. B., Kim, S., & Harris Jr, J. S. (2001). Nitrogen Incorporation in GaInNAs.

Ha, W., Gambin, V., Wistey, M. A., Kim, S., & Harris Jr, J. S. (2001).

Ha, W., Gambin, V., Wistey, M. A., Kim, S., & Harris, J. (2001). High efficiency multiple quantum well GaInNAs/GaNAs ridge-waveguide laser diode operating out to 1.4µm (pp. 165–169).