Faculty Profiles

Larson, L. A., Williams, J. M., & Current, M. I. (2012). [Review of Ion Implantation for Semiconductor Doping and Materials Modification, by A. W. Chao & W. Chou]. ACCELERATOR SCIENCE AND TECHNOLOGY, Volume 4: Accelerator Applications in Industry and the Environment.

Larson, L. A. (2012). [Review of Ion Implantation for Semiconductor Doping and Materials Modification, by A. W. Chao & W. Chou]. ACCELERATOR SCIENCE AND TECHNOLOGY, Volume 4: Accelerator Applications in Industry and the Environment.

Barnett, J., Larson, L. A., Butterbaugh, J. W., & Jammy, R. (2011). Front End Processes. In L. Wilson (Ed.), The International Technology Roadmap for Semiconductors. CA: Semiconductor Industry Association.

Barnett, J., Larson, L. A., Butterbaugh, J. W., & Jammy, R. (2011). Front End Processes.

Butterbaugh, J. W., Larson, L. A., & Jammy, R. (2010). Front End Processes.

Larson, L. A., & Jammy, R. (2009). Front End Processes. In L. Wilson (Ed.), The International Technology Roadmap for Semiconductors. CA: Semiconductor Industry Association.

Butterbaugh, J. W., Larson, L. A., & Jammy, R. (2009). Front End Processes.

Kalra, P., Majhi, P., Tseng, H. H., Larson, L. A., Jammy, R., & Liu, T. J. K. (2008). USJ Process Challenges for sub-45nm CMOS. In AIP Conf. Proc. (Vol. 1066).

Shao, Y., Hatula, J., Larson, L. A., & Jain, A. (2008). Dopant Activation and Defect Analysis of Ultra-Shallow Junctions Made by Gas Cluster Ion Beams. In AIP Conf. Proc. (Vol. 1066).

Larson, L. A., Jammy, R., & Butterbaugh, J. (2007). Front End Processes. In L. Wilson (Ed.), The International Technology Roadmap for Semiconductors. CA: Semiconductor Industry Association.

Hussain, M. M., Gebarra, G., Sassman, B., Lanee, S., & Larson, L. A. (2007). Highly Selective Dry Etch based Nanofabrication. J.Vac. Sci. Technol, B25, 1416.

Hussain, M. M., Labelle, E., Gebarra, G., Sassman, B., Lanee, S., Larson, L. A., & Moumen, N. (2006). Deposition Thickness Based High Throughput Nano-imprint Mold. Microelectronic Engineering. https://doi.org/10/1016/j.mee.2006.11.013

Pham, D., Larson, L. A., & Yang, J.-W. (2006). [Review of FINFET device junction formation challenges, by Y.-L. Jiang, G.-P. Ru, X.-P. Qu, & B.-Z. Li].

Larson, L. A., & Butterbaugh, J. (2005). Front End Processes. In L. Wilson (Ed.), The International Technology Roadmap for Semiconductors. CA: Semiconductor Industry Association.

Lee, B. H., Young, C. D., Choi, R., Sim, J. H., Bersuker, G., Kang, C. Y., … Ramiller, C. (2005). Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE) (pp. 859–862). Piscataway, NJ, USA: IEEE.

Lee, B. H., Sim, J. H., Choi, R., Bersuker, G., Matthew, K., Moumen, N., … Larson, L. A. (2004). Localized transient charging and it’s implication on the hot carrier reliability of HfSiON MOSFETs (pp. 691–692). Piscataway, NJ, USA: IEEE.

Li, H.-J., Zeitzoff, P., Larson, L. A., & Banerjee, S. (2004). B diffusion in Si with pre-amorphization of different species. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 22(5), 2380–2383.

Choi, R., Lee, B. H., Matthews, K., Sim, J. H., Bersuker, G., Larson, L. A., & Lee, J. C. (2004). Relaxation of FN stress induced Vth shift at NMOSFETs with HfSiON gate dielectric and TiN gate electrode. In Device Research Conference - Conference Digest. DRC Device Research Conference - Conference Digest.

Sim, J. H., Lee, B. H., Choi, R., Matthews, K., Kwong, D. L., Larson, L. A., … Bersuker, G. (2004). Hot carrier reliability of HfSiON NMOSFETs with poly and TiN metal gate. In Device Research Conference (Vol. 1, pp. 99–100). Piscataway, NJ, USA: IEEE.

Larson, L. A. (2003). [Review of Doping Roadmap, by L. Wilson]. The International Technology Roadmap for Semiconductors.

Kim, Y., Lim, C., Young, C. D., Matthews, K., Barnett, J., Foran, B., … Huff, H. R. (2003). Conventional poly-Si gate MOS-transistors with a novel, ultra-thin Hf-oxide layer. Digest of Technical Papers, 167–168.

Li, H.-J., Tichy, R., Ross, J., Gelpey, J., Stotts, B., Galloway, H., & Larson, L. A. (2003). [Review of Dopant diffusion simulation in thin-SOI, by T.-J. King, B. Yu, R. J. P. Lander, & S. Saito]. In Mater. Res. Soc. Symposium Proceedings (Vol. 765, pp. 179–184). Warrendale, PA, USA: Mater. Res. Soc.

Li, H.-J., Rhoad, T., Zeitzoff, P., Tichy, R., Larson, L. A., & Banerjee, S. (2003). [Review of B diffusion in low energy B/BF/sub 2/ implants with pre-amorphization of different species, by T.-J. King, B. Yu, R. J. P. Lander, & S. Saito]. In Mater. Res. Soc. Symposium Proceedings (Vol. 765, pp. 179–184). Warrendale, PA, USA: Mater. Res. Soc.

Lukaszek, W., Current, M. I., Daryanani, S., Larson, L. A., Rhoad, T., Shields, J., … Wagner, D. (2003). [Review of Investigation of electron-shading effects during high-current ion implants, by K. Eriguchi, S. Krishman, & T. Hook] (pp. 182–185). Piscataway, NJ, USA: IEEE.

Lysaght, P., Foran, B., Stemmer, S., Bersuker, G., Bennett, J., Tichy, R., … Huff, H. R. (2003). Thermal response of MOCVD hafnium silicate. In Microelectron. Eng (2nd–4th ed., Vol. 69, pp. 182–189). Netherlands: Elsevier.

Lysaght, P. S., Foran, B., Bersuker, G., Larson, L. A., Murto, R. W., & Huff, H. R. (2003). [Review of Physical and electrical characterization of hafnium silicate thin films, by D. Ginley, S. Guha, S. Carter, S. A. Chambers, R. Droopad, H. Hosono, … J. Tate]. In Mater. Res. Soc. Symposium Proceedings (Vol. 747, pp. 133–138). Warrendale, PA, USA: Mater. Res. Soc.

Lim, J. E., Kim, Y., Torres, K., Bersuker, G., Brown, G., Bennett, J., … Larson, L. A. (2003). [Review of The effect of sub-1000 degrees C source/drain anneal temperature on transistor in conventional SiO/sub 2/ integration and high-k dielectric integration, by B. Brown, T. L. Alford, M. Nastasi, & M. C. Vella] (pp. 79–82). Piscataway, NJ, USA: IEEE.

Li, H., Kirichenko, T., Kohli, P., Graetz, E., Zeitzoff, P., Tichy, R., … Banerjee, S. (2003). [Review of B Retarded Diffusion in the presence of In and Ge, by B. Brown, T. L. Alford, M. Nastasi, & M. C. Vella] (pp. 79–82). Piscataway, NJ, USA: IEEE.

Larson, L. A. (2003). Working with semiconductors. In Physics World (6th ed., Vol. 16, p. 47).

Lysaght, P. S., Foran, B., Bersuker, G., Tichy, R., Larson, L. A., Murto, R. W., & Huff, H. R. (2002). [Review of Physical characterization of high-k gate dielectric film systems processed by RTA and spike anneal, by J. Gelpey, B. Lojek, Z. Nenyei, & R. Singh] (pp. 93–98). Piscataway, NJ, USA: IEEE.

Shao, L., Wang, X., Rusakova, I., Chen, H., Liu, J., Bennett, J., … Van Der Heide, P. A. W. (2002). Stability studies of ultrashallow junction formed by low energy boron implant and spike annealing. Journal of Applied Physics, 92(10), 5788–5792.

Lu, X., Shao, L., Wang, X., Liu, J., Chu, W.-K., Bennett, J., … Ling, P. (2002). Cluster-ion implantation: An approach to fabricate ultrashallow junctions in silicon. Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures), 20(3), 992–994.

Larson, L. A., & Huff, H. (2002). Implant and process challenges on the ITRS front-end process roadmap. In Solid State Technology (1st ed., Vol. 45, pp. 32–34). PennWell Publishing.

Larson, L. A. (2001). [Review of Doping Roadmap, by L. Wilson]. The International Technology Roadmap for Semiconductors.

Borden, P. G., Bechtler, L., Larson, L. A., Murto, B., Covington, B., Ferguson, C., & Nguyen, B. (2001). [Review of Non-destructive characterization of activated shallow B and As implants in full NMOS and PMOS process flows, by A. Agarwal, L. Pelaz, H.-H. Vuong, P. Packan, & M. Kase]. In Materials Research Society Proceedings (Vol. 610, p. B6.12.1-6). Warrendale, PA, USA: Mater. Res. Soc.

Larson, L. A. (2000). Metrology for Ion Implantation. In A. Diebold (Ed.), Metrology for ULSI Technology. NY: M. Dekker.

Cleavelin, C., Covington, B., & Larson, L. A. (2000). Front end of line considerations for progression beyond the 100 nm node ultrashallow junction requirements. Journal of Vacuum Science & Technology B, 18(1), 346–353.

Huff, H. R., & Larson, L. A. (2000). The Gate Stack / Shallow Junction Challenge for Sub-100 nm Technology Generations. In EE Times.

Larson, L. A., & Covington, B. C. (2000). [Review of Shallow Junction Challenges to Rapid Thermal Processing, by F. Roozeboom, M. C. Öztürk, J. C. Gelpey, K. G. Reid, & D.-L. Kwong]. In PV 2000-9 (pp. 129–136). Pennington ( NJ), USA: The Electrochemical Society.

Borden, P., & Larson, L. A. (2000). Non-destructive Characterization of Activated Ultra-shallow Junctions (Vol. 9, pp. 259–263).

Borden, P., Ferguson, C., Sing, D., Larson, L. A., Bechtler, L., Jones, K., & Gable, P. (2000). In-line characterization of preamorphous implants (PAI). In Ion Implantation Technology (pp. 635–638). Piscataway, NJ, USA: IEEE.

Al-Bayati, A., Tandon, S., Mayur, A., Foad, M., Wagner, D., Murto, R., … Larson, L. A. (2000). Exploring the limits of pre-amorphization implants on controlling channeling and diffusion of low energy B implants and ultra shallow junction formation. In Ion Implantation Technology - 2000 (pp. 54–61). Piscataway, NJ, USA: IEEE.

Al-Bayati, A., Tandon, S., Doherty, R., Murrell, A., Wagner, D., Foad, M., … Larson, L. A. (2000). Junction profiles of sub keV ion implantation for deep sub-quarter micron devices. In Ion Implantation Technology - 2000 (pp. 87–90). Piscataway, NJ, USA: IEEE.

Felch, S., Bersuker, G., Larson, L. A., Lee, B., & Shi, J. (2000). [Review of Characterization of shallow junction transistors manufactured with plasma doping, by J. Matsuo, G. Takaoka, & I. Yamada]. In Proceedings  Pt (Vol. 2, pp. 1246–1249). IEEE.

Cleavelin, C. R., Covington, B. C., & Larson, L. A. (2000). Front end of line considerations for progression beyond the 100 nm node ultrashallow junction requirements. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 18(1), 346–353.

Ling, P., Strathman, M. D., Ling, C. H., Barney, D., Walsh, D., Larson, L. A., … Felch, S. (1999). New method for making shallow p-type junctions. In Proceedings of the International Conference on Ion Implantation Technology (Vol. 2, pp. 1175–1178). Piscataway, NJ, USA: IEEE.

Larson, L. A. (1999). [Review of Doping Roadmap, by L. Wilson]. The International Technology Roadmap for Semiconductors.

Larson, L. A., & Current, M. I. (1998). [Review of In-line Characterization of Doping Technologies for ULSI: Requirements and Capabilites, by D. G. Seiler]. In AIP Conference Proceedings (Vol. 449, pp. 143–152). Woodbury NY.

Current, M., Ishida, E., Larson, L. A., & Jones, E. (1998). [Review of Challenges of doping ultra-swallow transistor junctions for giga-scale devices, by H. Huff, H. Tsuya, & U. Gosele]. In Proceedings of the Eighth International Symposium on Silicon Materials Science and Technology (Vol. Pt. vol.2, pp. 1196–1212). ECS.

Boyd, Jr., W., Lee, M., Wagner, D., Romig, T., Bennett, J., Larson, L. A., … Zhou, L. (1998). Consideration of in-line qualification for ultrashallow junction implantation. Journal of Vacuum Science & Technology, B16(1), 447–452.

Larson, L. A. (1997). How Implantation Systems Work. In M. I. Current (Ed.), The Basics of Ion Implantation Technology, Equipment and Process (pp. 2-1-2–28). Austin: Ion Beam Press.

Ishida, E., Banerjee, S., Mehta, S., Smith, T. C., Current, M., Larson, L. A., & Tasch, A. (Eds.). (1996). Ion Implantation Technology. Piscataway, NJ: IEEE.

Craig, M., Sultan, A., Reddy, K., Ishida, E., Larson, L. A., & Banerjee, S. (1996). Dose Rate and Thermal Budget Optimization for Ultra-shallow Junctions Formed by Sub-5 keV Ion Implantation. J.Vac.Sci. Tech.B, 14(1), 255–259.

Matyi, R. J., & Larson, L. A. (1996). Materials Properties of B-Doped Si by Low Energy Plasma Source Ion Implantation (pp. 749–752). IEEE.

Current, M. I., & Larson, L. A. (1996). Profile analysis of a 0 25 mu m CMOS process (pp. 194–197). IEEE.

Current, M. I., & Larson, L. A. (1996). Study of wafer charging with CHARM and SPIDER monitors. In Proceedings of the International Conference on Ion Implantation Technology (pp. 61–64). IEEE.

Craig, M., Sultan, A., Reddy, K., Ishida, E., Larson, L. A., & Banerjee, S. (1996). Dose Rate and Thermal Budget Optimization for Ultra-shallow Junctions Formed by Sub-5 keV Ion Implantation. J.Vac.Sci. Tech.B, 14(1), 255–259.

Craig, M., Ishida, E., Banerjee, S., Reddy, K., Sultan, A., & Larson, L. A. (1996). Dose Rate and Thermal Budget Optimization for Ultra-shallow Junctions Formed by 2-5 keV Ion Implantation. J.Vac. Sci. Technol, B14, 255.

Chu, P. K., & Larson, L. A. (1996). Plasma Immersion Ion Implantation - A Fledgling Technique for Semiconductor Processing. Materials Science & Engineering Reports, 17(6–7), 207–280.

Craig, M., Sultan, A., Banerjee, S., Ishida, E., & Larson, L. A. (1996). Carbon Co-implantation for Ultra-shallow p(+)-n Junction Formation. In Proc. 11th International Conf. on Ion Implantation Technology (pp. 665–668).

Wenner, V., & Larson, L. A. (1995). Non-destructive detection of ion implant contamination: A SEMATECH/AMD study (pp. 309–314). IEEE.

Cherekdjian, S., & Larson, L. A. (1995). [Review of Metallic Contaminants from Silicone Elastomers, by S. Coffa, G. Ferla, F. Priolo, & E. Rimini] (p. 596). Elsevier.

Shi, J., & Larson, L. A. (1995). Amorphous Layer Formation at Room Temperature by Boron Implantation in Silicon. In Proceedings of the Ion Beams Modification of Materials Conference.

Sultan, A., Craig, M., Reddy, K., Banerjee, S., Ishida, E., Maillot, P., … Larson, L. A. (1995). The Dependence of Ultra-shallow Junction Depths on Implant Dose Rates. App. Phys. Lett., 67(9), 1223–1225.

Current, M. I., Mathur, R., Kump, M., & Larson, L. A. (1995). Process Simulation Challenges for ULSI Devices - A Users Perspective. Nuclear Inst. & Methods, B102(1–4), 198–201.

Sultan, A., Craig, M., Reddy, K., Banerjee, S., Ishida, E., Maillot, P., & Larson, L. A. (1995). The Effect of Implant Dose Rates and Two-Step Anneals on P+-N Ultra-Shallow Junctions. In Proc. of UGIM Symp (Vol. 11, pp. 108–112).

Ishida, E., & Larson, L. A. (1995). Evaluation of 0.18 micron Ultra-Shallow Doping Technologies:  A SEMATECH/ University/Industry Cooperative Research Effort. In Proceedings of the 11th Biennial University / Government / Industry Research Conference.

Craig, M., Sultan, A., Reddy, K., Ishida, E., Larson, L. A., & Banerjee, S. (1995). Dose Rate and Thermal Budget Optimization for Ultra-shallow Junctions Formed by Sub-5 keV Ion Implantation. In Proc. Workshop on the Measurement & Characterization of Ultra-shallow Doping Profiles in Semiconductors.

Craig, M., Sultan, A., Reddy, K., Ishida, E., Larson, L. A., & Banerjee, S. (1995). Dose Rate and Thermal Budget Optimization for Ultra-shallow Junctions Formed by Sub-5 keV Ion Implantation.

Craig, M., Sultan, A., Reddy, K., Ishida, E., Larson, L. A., & Banerjee, S. (1995). Enhanced Diffusion Suppression via Two-Step Anneals in Low Energy BF2-Implanted Ultra-shallow Junctions.

Simonton, R., & Larson, L. A. (1994). Flux Dependence of Amorphous Layer Formation and Damage Annealing in Room Temperature Implantation of Boron into Silicon. In Mat.Res. Soc. Symp. Proc (Vol. 316, p. 153).

Shi, J., Bradley, R. J., & Larson, L. A. (1994). RTP Anneal for High Dose Ion Implantation Monitoring. In Proceeedings of the 2nd International Rapid Thermal Processing Conference (p. 321).

Velaga, A., Larson, L. A., Brown, J., & Lindholm, D. (1993). Benchmarking of Temperature Measurement and Control Capability of RTP Systems. In RTP’93 Conference Proceedings.

Larson, L. A., Martinez, R., & Lindholm, D. (1993). COO Analysis of the Manufacturing Goals for RTPs to be used in 0.25 micron Manufacturing. In RTP’93 Conference Proceedings.

Larson, L. A., Keenan, W. A., & Johnson, W. H. (1993). A Sheet Resistance Standard for Ion Implant. In Solid State Technology (10th ed., Vol. 36).

Current, M. I., & Larson, L. A. (1993). Defect Engineering of P+ Junctions by Multiple Species Ion Implantation. Nuclear Inst. & Methods, B74(1–2), 175–180.

Hahn, S., & Larson, L. A. (1993). Damage and it’s rapid thermal annealing kinetics in Ar+ ion implanted Cz silicon. Nuclear Inst. & Methods, B74(N1-2), 275–278.

Current, M. I., Larson, L. A., & Keenan, W. A. (1992). Process Control for Ion Implantation. In J. Zieglar (Ed.), Ion Implantation, Science and Technology. North Holland.

Seidel, T. E., & Larson, L. A. (1992). Status of Low Dose Ion Implantation for VLSI. In MRS Bulletin (6th ed., Vol. 17, p. 34).

Larson, L. A. (1992). Status of Low Dose Ion Implantation for VLSI. MRS Bulletin, 17(6), 34.

Yarling, C. B., Johnson, W. H., Keenan, W. A., & Larson, L. A. (1992). Uniformity Mapping in Ion Implantation - II. In Solid State Technology (3rd ed., Vol. 35, pp. 29–32).

Crook, J. P., & Larson, L. A. (1991). Custom Profiles by Automated Multistep Implantation. Nuclear. Instr. and Methods, B55(N1-4), 593–591.

Keenan, W. A., & Larson, L. A. (1991). Micro-uniformity Test Structure. Nucl. Inst. And Meth., B55, 116–172.

Larson, L. A., Weiner, W., & Sakshaug, M. (1991). The Use of TBA and TBP as Liquid Reagents for Phosphorus and Arsenic Ion Implantation. Nucl. Inst. and Meth., B55, 109–114.

Larson, L. A., Keenan, W. A., & Johnson, W. H. (1991). Ion Implant Standard. Nucl. Inst. And Meth., B55, 275–280.

Larson, L. A. (1991). A Survey of Implant Particulate Process Control and Yield Effects. Nucl. Inst. and Meth., B55, 132–136.

Hara, T., & Larson, L. A. (1991). Monitoring of Dose in Low Dose Ion Implantation. Nucl. Inst. and Meth, B55.

Yarling, C. B., Keenan, W. A., & Larson, L. A. (1991). The History of Uniformity Mapping in Ion Implantation. Nucl. Inst. And Meth, B55, 235–242.

Hahn, S., & Larson, L. A. (1991). Damage and RTA Kinetics in Ar+ and Si+ Ion Implanted CZ Silicon Characterized by Thermal Wave Modulated Optical Reflectance. In Rapid Thermal and Integrated Processing Conference Proceedings.

Yarling, C. B., Johnson, W. H., Keenan, W. A., & Larson, L. A. (1991). Uniformity Mapping in Ion Implantation - I. In Solid State Technology (12th ed., Vol. 34, pp. 57–61).

Hara, T., & Larson, L. A. (1990). [Review of Studies of Ion Implantation Damage and Annealing Kinetics using the Thermal-Wave Method, by H. Huff, K. G. Barraclough, & J. Chikawa]. In Semiconductor Silicon (p. 972).

Larson, L. A., & Panja, R. K. (1990). Implant Fab Particle Process Control using Automated Machine Cycle Triggering. In Inst. Environmental Science  Proceedings (p. 401).

Hara, T., & Larson, L. A. (1990). Monitoring of Low-Dose Ion Implantation in Silicon. IEEE Elec. Dev. Letters.

Lucazek, W., & Larson, L. A. (1990). Applications of a New Wafer Surface Charge Monitor.

Hahn, S., Hara, T., & Larson, L. A. (1989). Damage Formed by Ion Implantation in Silicon Evaluated by Displaced Atom Density and Thermal-Wave. Appl.Phys.Lett., 55(13).

Borden, P., & Larson, L. A. (1989). Benefits of Real-time, In-situ Particle Monitoring in Production Medium Current Implantation. IEEE Trans. Semiconductor Manufacturing, 2(4), 141.

Larson, L. A. (1989). A Comparison of Wafer Resistivity Probing Tools. Nucl. Inst. and Meth., B37/38, 628.

Hara, T., & Larson, L. A. (1989). Damage formed by Ion Implantation in Silicon Evaluated by RBS, RHEED and Thermal-Wave. In The International Conference on the Science and Technology of Defect Control in Semiconductors.

Current, M. I., & Larson, L. A. (1989). [Review of Ultra-Pure Processing: A Key Challenge for Ion Implantation Processing for the  Fabrication of ULSI Devices, by M. I. Current & D. K. Sadana]. In Advanced Applications of Ion Implantation (Vol. 147, p. 365). M.R.S. Proceedings.

Felch, S. B., & Larson, L. A. (1989). Analysis Techniques of Charging Damage Studied on Three Different High Current Implanters. In Nucl.Inst. and Meth. (Vol. B37/38, p. 628).

Larson, L. A. (1988). An Industry-wide Evaluation of Ion Implant Dosing Accuracy. J. Electrochemical Soc., 135(7), 1802.

Hahn, S., & Larson, L. A. (1988). Studies of Implantation Damage using the Thermal Wave Technique. J. Electrochemical Society, 135(3), 1802–1805.

Kennedy, G. L., & Larson, L. A. (1988). An Examination of Implant Cross-contamination Levels Produced by Clampless Disks. J. Electrochemical Soc., 135(7), 1805.

Larson, L. A., & Kennedy, G. L. (1987). [Review of Dosing Accuracy: A Comparison of Several Experiments, by M. I. Current, N. W. Cheung, W. Weisenberger, & B. J. Kirby]. In Ion Implantation Technology (p. 421). North Holland.

Kirby, B. J., Larson, L. A., & Liang, R. Y. (1987). [Review of Thermal-Wave Measurements of Ion Implanted Silicon, by M. I. Current, N. W. Cheung, W. Weisenberger, & B. J. Kirby]. In Ion Implantation Technology (p. 550). North Holland.

Larson, L. A. (1986). [Review of High Sensitivity Auger Spectroscopy, by N. W. Cheung & M. A. Nicolet]. In Materials Characterization (Vol. 69, p. 129). M.R.S. Symposia Proceedings.

Mehrotra, B. H., & Larson, L. A. (1986). [Review of An FTIR and RGA Study of the Outgassing of Photoresist during Ion Implant, by D. K. Sadana & M. I. Current]. In Advanced Processing and Characterization of Semiconductors III (Vol. 623, p. 78).

Larson, L. A., & Kirby, B. J. (1986). [Review of Measurements of Cross-contamination Levels Produced by Ion Implanters, by D. C. Gupta & P. H. Langer]. In Emerging Semiconductor Technology (p. 119). A.S.T.M.

Larson, L. A., & Current, M. I. (1986). [Review of Enhanced Diffusion Effects of Dopant Cross-contamination in Ion Implanted Surfaces, by H. R. Huff, T. Abe, & B. Kolbesen]. In Semiconductor Silicon 1986 (pp. 86–4).

Larson, L. A., & Current, M. I. (1985). [Review of Metallic Impurities and Dopant Cross-contamination Effects in Ion Implanted Surfaces, by B. R. Appleton, F. H. Eisen, & T. W. Sigmon]. In Ion Beam Processes in Advanced Electronic Materials and Device Technology (p. 381).

Larson, L. A. (1985). [Review of Phosphorus in Antimony: A Case Study in Implant Cross-contamination, by M. I. Current & D. K. Sadana]. In Advanced Applications of Ion Implantation (Vol. 530, p. 50).

Dudek, H. J., Larson, L. A., & Browning, R. (1984). Study of the Fiber/Matrix Interface in a SiC Fiber Reinforced Ti Alloy Using a High Resolution Field Emission Auger Microprobe. Surf. and Interface Analysis, 6, 247.

Prutton, M., Larson, L. A., & Poppa, H. (1983). Techniques for the Correction of Topographical Effects in Scanning Auger Electron Microscopy. J.Appl.Phys., 54, 374.

Larson, L. A., Browning, R., Smialek, J., & Poppa, H. (1983). Interfacial Layers in High Temperature Oxidized NiCrAl. J.Vac.Sci. and Technol., A1, 1029.

Larson, L. A., Pizzo, P. P., & Avalos-Borja, M. (1983). [Review of A Surface Analytical Examination of Stringer Particles in Aluminum-Lithium-CopperAlloys, by T. H. Sanders Jr. & E. A. Starke Jr.]. In Aluminum-Lithium Alloys II (p. 303). AIME.

Avalos-Borja, M., Pizzo, P. P., & Larson, L. A. (1983). [Review of Transmission Electron Microscopy Characterization of Microstructural Features in Aluminum-Lithium-Copper Alloys, by T. H. Sanders Jr. & E. A. Starke Jr.]. In Aluminum-Lithium Alloys II (p. 287). AIME.

Larson, L. A. (1983). [Review of Imaging Parameters in Scanning Auger Microscopy, by J. L. Segovia]. In Proceedings Ninth International Vacuum Congress and Fifth International Conference on Solid Surfaces-Extended Abstracts (p. 139). A.S.E.V.A.

Yu, K. S., Prutton, M., Larson, L. A., Pate, B. B., & Poppa, H. (1982). A Comparison of Several Practical Smoothing Methods Applied to Auger Electron Energy Distributions and Line Scans. J.Elec.Spec. and Related Phenomenon, 27, 179.

Larson, L. A., Prutton, M., Smialek, J., & Poppa, H. (1982). New Oxidation Features in NiCrAl-Zr Revealed by an Auger Microprobe. J.Vac.Sci. and Technol., 20, 1403.

Bujor, M., Larson, L. A., & Poppa, H. (1982). A Study of the Initial Oxidation of Evaporated Thin Films of Aluminum by AES, ELS and ESD. J.Vac.Sci. and Technol., 20, 392.

Prutton, M., Peacock, D. C., ElGomati, M. M., Larson, L. A., & Poppa, H. (1982). [Review of Normalization of Auger Electron Images for Beam Current Fluctuations and Sample Topography, by M. J. Goringe]. In Electron Microscopy and Analysis (p. 443). Inst. of Physics.

Larson, L. A., Prutton, M., ElGomati, M. M., & Veneklasen, L. H. (1981). A Comparison of Two Electrostatic Field Emission Systems for Auger Microanalysis.

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